SI1023X-T1-E3

Si1023X Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 1.2 at VGS = - 4.5 V - 20 1.6 at VGS = - 2.5 V 2.7 at VGS = - 1.8 V ID (mA) - 350 - 300 - 150 FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET: 1.8 V Rated • Very Small Footprint • High-Side Switching • Low On-Resistance: 1.2 Ω • Low Threshold: 0.8 V (typ.) • Fast Switching Speed: 14 ns • 1.8 V Operation • Gate-Source ESD Protected: 2000 V RoHS COMPLIANT SOT-563 SC-89 S1 1 6 D1 Marking Code: B BENEFITS • Ease in Driving Switches • Low Offset (Error) Voltage • Low-Voltage Operation • High-Speed Circuits • Low Battery Voltage Operation G1 2 5 G2 D2 3 4 S2 Top View Ordering Information: Si1023X-T1-E3 (Lead (Pb)-free) Si1023X-T1-GE3 (Lead (Pb)-free and Halogen-free) APPLICATIONS • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems • Power Supply Converter Circuits • Load/Power Switching Cell Phones, Pagers ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentb TA = 25 °C TA = 85 °C TA = 25 °C TA = 85 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg ESD - 450 280 145 - 55 to 150 2000 - 390 - 280 - 650 - 380 250 130 mW °C V 5s ±6 - 370 - 265 mA Steady State - 20 Unit V Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes: a. Surface Mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71169 S-80643-Rev. B, 24-Mar-08 www.vishay.com 1 Si1023X Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Turn-Off Time Qg Qgs Qgd td(on) td(off) VDD = -10 V, RL = 47 Ω ID ≅ - 200 mA, VGEN = - 4.5 V, RG = 10 Ω VDS = - 10 V, VGS = - 4.5 V, ID = - 250 mA 1500 150 450 14 46 ns pC a Symbol VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD Test Conditions VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 4.5 V VDS = - 16 V, VGS = 0 V VDS = - 16 V, VGS = 0 V, TJ = 85 °C VDS = - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 350 mA VGS = - 2.5 V, ID = - 300 mA VGS = - 1.8 V, ID = - 150 mA VDS = - 10 V, ID = - 250 mA IS = - 150 mA, VGS = 0 V Min. - 0.45 Typ. Max. Unit V ±1 - 0.3 - 700 0.8 1.2 1.8 0.4 - 0.8 ±2 - 100 -5 µA nA µA mA 1.2 1.6 2.7 S - 1.2 V Ω Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1.0 VGS = 5 thru 3 V 0.8 I D - Drain Current (mA) I D - Drain Current (A) 2.5 V 800 1000 TJ = - 55 °C 25 °C 0.6 2V 0.4 1.8 V 0.2 600 125 °C 400 200 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics www.vishay.com 2 Document Number: 71169 S-80643-Rev. B, 24-Mar-08 Si1023X Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 4.0 120 VGS = 0 V f = 1 MHz R DS(on) - On-Resistance (Ω) 3.2 VGS = 1.8 V 2.4 VGS = 2.5 V 1.6 VGS = 4.5 V 0.8 C - Capacitance (pF) 100 80 Ciss 60 40 Coss 20 Crss 0 0.0 0 200 400 600 800 1000 0 4 8 12 16 20 I D - Drain Current (mA) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 5 VDS = 10 V ID = 250 mA 4 R DS(on) - On-Resistance 1.4 1.6 Capacitance VGS - Gate-to-Source Voltage (V) (Normalized) VGS = 4.5 V ID = 350 mA 1.2 VGS = 1.8 V ID = 150 mA 3 2 1.0 1 0.8 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.6 - 50 - 25 0 25 50 75 100 125 Q g - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge 1000 TJ = 125 °C R DS(on) - On-Resistance (Ω) 4 I S - Source Current (mA) 5 On-Resistance vs. Junction Temperature 100 TJ = 25 °C TJ = - 55 °C 10 3 ID = 350 mA 2 ID = 200 mA 1 1 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 6 VSD - Sour ce-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 71169 S-80643-Rev. B, 24-Mar-08 www.vishay.com 3 Si1023X Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 0.3 3.0 0.2 VGS(th) Variance (V) ID = 0.25 mA 0.1 IGSS - (µA) 2.5 2.0 VGS = 4.5 V 1.5 0.0 - 0.1 1.0 - 0.2 0.5 - 0.3 - 50 - 25 0 25 50 75 100 125 0.0 - 50 - 25 0 25 50 75 100 125 TJ - Temperature (°C) TJ - Temperature (°C) Threshold Voltage Variance vs. Temperature BVGSS - Gate-to-Source Breakdown Voltage (V) 7 6 5 4 3 2 1 0 - 50 IGSS vs. Temperature - 25 0 25 50 75 100 125 TJ - Temperature (°C) BVGSS vs. Temperature 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 500 °C/W Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71169. www.vishay.com 4 Document Number: 71169 S-80643-Rev. B, 24-Mar-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1