SI1029X

Si1029X Vishay Siliconix Complementary N- and P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 60 RDS(on) (Ω) 1.40 at VGS = 10 V 3 at VGS = 4.5 V 4 at VGS = - 10 V 8 at VGS = - 4.5 V ID (mA) 500 200 - 500 - 25 FEATURES • • • • • Halogen-free Option Available TrenchFET® Power MOSFETs Very Small Footprint High-Side Switching Low On-Resistance: N-Channel, 1.40 Ω P-Channel, 4 Ω • Low Threshold: ± 2 V (typ.) • Fast Switching Speed: 15 ns (typ.) • Gate-Source ESD Protected: 2000 V RoHS COMPLIANT P-Channel - 60 BENEFITS • • • • 6 D1 SC-89 S1 1 Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits APPLICATIONS G1 2 5 G2 Marking Code: H D2 3 4 S2 • Replace Digital Transistor, Level-Shifter • Battery Operated Systems • Power Supply Converter Circuits Top View Ordering Information: Si1029X-T1-E3 (Lead (Pb)-free) Si1029X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentb TA = 25 °C TA = 85 °C TA = 25 °C TA = 85 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg ESD 450 280 145 320 230 650 380 250 130 - 55 to 150 2000 - 450 280 145 305 220 5s Steady State 60 ± 20 - 200 - 145 - 650 - 380 250 130 mW °C V - 190 - 135 mA 5s P-Channel Steady State - 60 Unit V Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes: a. Surface Mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71435 S-80643-Rev. B, 24-Mar-08 www.vishay.com 1 Si1029X Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS(th) VGS = 0 V, ID = 10 µA VGS = 0 V, ID = - 10 µA VDS = VGS, ID = 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 10 V VDS = 50 V, VGS = 0 V VDS = - 50 V, VGS = 0 V VDS = 50 V, VGS = 0 V, TJ = 85 °C VDS = - 50 V, VGS = 0 V, TJ = 85 °C VDS = 10 V, VGS = 4.5 V VDS = - 10 V, VGS = - 4.5 V VDS = 7.5 V, VGS = - 4.5 V VDS = - 10 V, VGS = - 10 V VGS = 4.5 V, ID = 200 mA VGS = - 4.5 V, ID = - 25 mA VGS = 10 V, ID = 500 mA VGS = - 10 V, ID = - 500 mA VGS = 10 V, ID = 500 mA, TJ = 125 °C VGS = - 10 V, ID = - 500 mA, TJ = 125 °C VDS = 10 V, ID = 200 mA VDS = - 10 V, ID = - 100 mA IS = 200 mA, VGS = 0 V IS = - 200 mA, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 60 - 60 1 -1 Symbol Test Conditions Min. Typ. Max. Unit Zero Gate Voltage Drain Current IDSS 2.5 - 3.0 ± 50 ± 100 ± 150 ± 200 10 - 25 100 - 250 V nA On-State Drain Currenta ID(on) 500 - 50 800 - 600 3 8 1.40 4 2.50 6 200 100 1.4 - 1.4 750 1700 75 260 225 460 30 23 6 10 3 5 15 20 mA Drain-Source On-State Resistancea RDS(on) Ω Forward Transconductancea Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance gfs VSD ms V Qg Qgs Qgd Ciss Coss Crss tON N-Channel VDS = 10 V, VGS = 4.5 V, ID = 250 mA P-Channel VDS = - 30 V, VGS = - 15 V, ID = - 500 mA pC N-Channel VDS = 25 V, VGS = 0 V, f = 1 MHz P-Channel VDS = - 25 V, VGS = 0 V, f = 1 MHz N-Channel VDD = 30 V, RL = 150 Ω ID ≅ 200 mA, VGEN = 10 V, RG = 10 Ω P-Channel VDD = - 25 V, RL = 150 Ω ID ≅ - 165 mA, VGEN = - 10 V, RG = 10 Ω pF Turn-On Timec ns 20 35 Turn-Off Timec tOFF Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71435 S-80643-Rev. B, 24-Mar-08 Si1029X Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1.0 6V VGS = 10 thru 7 V 0.8 I D - Drain Current (A) 5V I D - Drain Current (mA) 900 25 °C 125 °C 600 TJ = - 55 °C 1200 0.6 4V 0.4 300 0.2 3V 0.0 0 1 2 3 4 5 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 4.0 3.5 R DS(on) - On-Resistance ( ) 40 3.0 2.5 2.0 1.5 1.0 10 0.5 0.0 0 200 400 600 800 1000 0 0 5 Crss VGS = 4.5 V VGS = 10 V C - Capacitance (pF) 30 50 Transfer Characteristics VGS = 0 V f = 1 MHz Ciss 20 Coss 10 15 20 25 I D - Drain Current (mA) V DS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 7 6 5 4 3 2 1 0 0.0 0.0 - 50 VDS = 10 V ID = 250 mA R DS(on) - On-Resistance 2.0 Capacitance VGS - Gate-to-Source Voltage (V) VGS = 10 V at 500 mA 1.6 (Normalized) 1.2 VGS = 4.5 V at 200 mA 0.8 0.4 0.1 0.2 0.3 0.4 0.5 0.6 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 71435 S-80643-Rev. B, 24-Mar-08 www.vishay.com 3 Si1029X Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1000 VGS = 0 V R DS(on) - On-Resistance ( ) 4 5 I S - Source Current (A) 100 TJ = 125 °C 3 2 ID = 200 mA ID = 500 mA 10 TJ = 25 °C 1 TJ = - 55 °C 1 0.00 0.3 0.6 0.9 1.2 1.5 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.4 On-Resistance vs. Gate-to-Source Voltage 0.2 ID = 250 µA V GS(th) Variance (V) 0.0 - 0.2 - 0.4 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Threshold Voltage Variance Over Temperature www.vishay.com 4 Document Number: 71435 S-80643-Rev. B, 24-Mar-08 Si1029X Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1.0 VGS = 10 V 7V 0.8 I D - Drain Current (A) 8V I D - Drain Current (mA) 900 25 °C 125 °C 600 6V 1200 TJ = - 55 °C 0.6 0.4 5V 0.2 4V 0.0 0 1 2 3 4 5 300 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 20 40 Transfer Characteristics VGS = 0 V R DS(on) - On-Resistance ( ) 16 VGS = 4.5 V C - Capacitance (pF) 32 Ciss 24 12 VGS = 5 V 8 VGS = 10 V 16 Coss 8 Crss 4 0 0 200 400 600 800 1000 0 0 5 10 15 20 25 I D - Drain Current (mA) V DS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 15 ID = 500 mA VGS - Gate-to-Source Voltage (V) 12 R DS(on) - On-Resistance VDS = 30 V VDS = 48 V 9 1.8 Capacitance 1.5 VGS = 10 V at 500 mA 1.2 (Normalized) VGS = 4.5 V at 25 mA 0.9 6 0.6 3 0.3 0 0.0 0.3 0.6 0.9 1.2 1.5 1.8 0.0 - 50 - 25 0 25 50 75 100 125 150 Q g - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 71435 S-80643-Rev. B, 24-Mar-08 www.vishay.com 5 Si1029X Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1000 VGS = 0 V R DS(on) - On-Resistance ( ) 8 ID = 500 mA 10 I S - Source Current (A) 100 TJ = 125 °C 6 4 ID = 200 mA 2 10 TJ = 25 °C TJ = - 55 °C 1 0.00 0.3 0.6 0.9 1.2 1.5 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.5 0.4 0.3 VGS(th) Variance (V) 0.2 0.1 0.0 - 0.1 - 0.2 - 0.3 - 50 On-Resistance vs. Gate-to-Source Voltage ID = 250 µA - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Threshold Voltage Variance Over Temperature www.vishay.com 6 Document Number: 71435 S-80643-Rev. B, 24-Mar-08 Si1029X Vishay Siliconix N- OR P-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 PDM t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 500 °C/W Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71435. Document Number: 71435 S-80643-Rev. B, 24-Mar-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1