SI1031R

Si1031R/X New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 8 @ VGS = - 4.5 V - 20 12 @ VGS = - 2.5 V 15 @ VGS = - 1.8 V 20 @ VGS = - 1.5 V 1.5−V Rated ID (mA) -150 -125 -100 -30 FEATURES D D D D D D High-Side Switching Low On-Resistance: 8 W Low Threshold: 0.9 V (typ) Fast Switching Speed: 45 ns 1.8-V Operation Gate-Source ESD Protection BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation SC-75A or SC-89 G 1 APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems D Power Supply Converter Circuits D Load/Power Switching Cell Phones, Pagers SC-75A (SOT - 416): Si1031R SC-89 (SOT - 490): Si1031X 3 D S 2 Top View Marking Code: H ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Si1031R Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currenta Continuous Source Current (diode conduction)a Maximum Power Dissipationa TA = 25_C TA = 85_C PD TJ, Tstg ESD TA = 25_C TA = 85_C Si1031X 5 secs -20 "6 V -165 -150 -600 -155 -125 mA Symbol VDS VGS 5 secs Steady State Steady State Unit -150 ID -110 IDM IS -250 280 145 -500 -140 -100 -200 250 130 -340 340 170 -55 to 150 2000 -240 300 150 mW _C V Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes a. Surface Mounted on FR4 Board. Document Number: 71171 S-31507—Rev. B, 14-Jul-03 www.vishay.com 1 Si1031R/X Vishay Siliconix New Product SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "2.8 V Gate-Body Gate Body Leakage IGSS VDS = 0 V, VGS = "4.5 V VDS = - 16 V, VGS = 0 V VDS = - 16 V, VGS = 0 V, TJ = 85_C VDS = - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 150 mA Drain-Source On State Drain Source On-State Resistancea rDS( ) DS(on) VGS = - 2.5 V, ID = - 125 m A VGS = - 1.8 V, ID = - 100 m A VGS = - 1.5 V, ID = - 30 m A Forward Transconductancea Voltagea gfs VSD VDS = - 10 V, ID = - 150 mA IS = - 150 mA, VGS = 0 V 0.4 -1.2 -200 8 12 15 20 S V W -0.40 "0.5 "1 -1 -1.20 "1 "2 -500 -10 mA nA mA mA V Symbol Test Condition Min Typa Max Unit Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ID(on) Diode Forward Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = - 10 V, RL = 65 W V, ID ^ - 150 mA, VGEN = - 4.5 V, RG = 10 W VDS = - 10 V, VGS = - 4.5 V, ID = - 150 mA 1500 150 450 55 30 60 30 ns pC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Output Characteristics 0.5 VGS = 5 thru 2.5 V 0.4 I D - Drain Current (A) 1.8 V 0.3 I D - Drain Current (mA) 2V 400 500 TJ = - 55_C 25_C Transfer Characteristics 300 125_C 0.2 200 0.1 100 0.0 0 1 2 3 4 5 6 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 71171 S-31507—Rev. B, 14-Jul-03 2 Si1031R/X New Product TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) On-Resistance vs. Drain Current 25 r DS(on) - On-Resistance ( W ) VGS = 1.8 V C - Capacitance (pF) 20 120 VGS = 0 V f = 1 MHz Vishay Siliconix Capacitance 100 80 Ciss 15 VGS = 2.5 V 10 VGS = 4.5 V 5 60 40 Coss 20 Crss 0 0 0 200 400 600 800 1000 0 4 8 12 16 20 ID - Drain Current (mA) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 150 mA 4 1.6 On-Resistance vs. Junction Temperature r DS(on) - On-Resistance ( W) (Normalized) 1.4 VGS = 4.5 V ID = 150 mA 1.2 3 2 1.0 VGS = 1.8 V ID = 125 mA 1 0.8 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.6 -50 -25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 1000 IS - Source Current (mA) TJ = 125_C r DS(on) - On-Resistance ( W ) 40 50 On-Resistance vs. Gate-to-Source Voltage 100 TJ = 25_C TJ = - 55_C 10 ID = 150 mA 30 20 10 ID = 125 mA 1 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 6 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71171 S-31507—Rev. B, 14-Jul-03 www.vishay.com 3 Si1031R/X Vishay Siliconix New Product TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Threshold Voltage Variance vs. Temperature 0.3 3.0 IGSS vs. Temperature 0.2 V GS(th) Variance (V) ID = 0.25 mA 0.1 IGSS - (mA) 2.5 2.0 VGS = 2.8 V -0.0 1.5 -0.1 1.0 -0.2 0.5 -0.3 -50 -25 0 25 50 75 100 125 0.0 -50 -25 0 25 50 75 100 125 TJ - Temperature (_C) TJ - Temperature (_C) BVGSS vs. Temperature BVGSS - Gate-to-Source Breakdown Voltage (V) 0 -1 -2 -3 -4 -5 -6 -7 -50 -25 0 25 50 75 100 125 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A, Si1031R Only) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA =500_C/W t1 t2 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71171 S-31507—Rev. B, 14-Jul-03