SI1032R

Si1032R/X Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 5 @ VGS = 4.5 V 20 7 @ VGS = 2.5 V 9 @ VGS = 1.8 V 10 @ VGS = 1.5 V ID (mA) 200 175 150 50 1.5-V Rated FEATURES D D D D D D Low-Side Switching Low On-Resistance: 5 W Low Threshold: 0.9 V (typ) Fast Switching Speed: 35 ns 1.8-V Operation Gate-Source ESD Protection BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems D Power Supply Converter Circuits D Load/Power Switching Cell Phones, Pagers SC-75A or SC-89 G 1 Ordering Information: 3 S 2 Top View D SC-75A (SOT-416): Si1032R-T1 SC-75A (SOT-416): Si1032R-T1—E3 (Lead Free) SC-89 (SOT-490): Si1032X-T1 SC-89 (SOT-490): Si1032X-T1—E3 (Lead Free) Marking Code: G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Si1032R Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currenta Continuous Source Current (diode conduction)a Maximum Power Dissipationa for SC 75 SC-75 TA = 25_C TA = 85_C TA = 25_C TA = 85_C Si1032X 5 secs 20 "6 Symbol VDS VGS ID IDM IS PD TJ, Tstg ESD 5 secs Steady State Steady State Unit V 200 110 500 250 280 145 140 100 210 150 600 200 140 mA mA 200 250 130 300 340 170 −55 to 150 2000 240 300 150 mW _C V Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes c. Surface Mounted on FR4 Board. Document Number: 71172 S-40574—Rev. C, 29-Mar-04 www.vishay.com 1 Si1032R/X Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Gate Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "2.8 V VDS = 0 V, VGS = "4.5 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 200 mA Drain-Source On-State Drain Source On State Resistancea rDS(on) VGS = 2.5 V, ID = 175 m A VGS = 1.8 V, ID = 150 m A VDS = 1.5 V, ID = 40 mA Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = 10 V, ID = 200 mA IS = 150 mA, VGS = 0 V 0.5 1.2 250 5 7 9 10 S V W 0.40 0.7 "0.5 "1.0 1.2 "1.0 "3.0 1 10 mA mA V Symbol Test Condition Min Typ Max Unit Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ID(on) Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = 10 V, RL = 47 W V, ID ^ 200 mA, VGEN = 4.5 V, RG = 10 W VDS = 10 V, VGS = 4.5 V, ID = 150 mA 750 75 225 50 25 50 25 ns pC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Output Characteristics 600 VGS = 5 thru 1.8 V 0.4 I D − Drain Current (mA) I D − Drain Current (A) TJ = −55_C 500 400 300 200 100 0 0.0 25_C 125_C 0.5 Transfer Characteristics 0.3 0.2 0.1 1V 0.0 0 1 2 3 4 5 6 0.5 1.0 1.5 2.0 2.5 VDS − Drain-to-Source Voltage (V) www.vishay.com VGS − Gate-to-Source Voltage (V) Document Number: 71172 S-40574—Rev. C, 29-Mar-04 2 Si1032R/X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) On-Resistance vs. Drain Current 50 r DS(on) − On-Resistance ( W ) 100 VGS = 0 V f = 1 MHz C − Capacitance (pF) 40 80 Ciss 60 Capacitance 30 20 VGS = 1.8 V 10 VGS = 2.5 V VGS = 4.5 V 0 50 100 150 200 250 40 Coss 20 Crss 0 4 0 0 8 12 16 20 ID − Drain Current (mA) VDS − Drain-to-Source Voltage (V) 1.60 Gate Charge 5 V GS − Gate-to-Source Voltage (V) VDS = 10 V ID = 150 mA rDS(on) − On-Resiistance (Normalized) On-Resistance vs. Junction Temperature 4 1.40 VGS = 4.5 V ID = 200 mA 3 1.20 VGS = 1.8 V ID = 175 mA 2 1.00 1 0.80 0 0.0 0.2 0.4 0.6 0.8 0.60 −50 −25 0 25 50 75 100 125 Qg − Total Gate Charge (nC) TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 1000 TJ = 125_C r DS(on) − On-Resistance ( W ) I S − Source Current (mA) 50 On-Resistance vs. Gate-to-Source Voltage 40 ID = 200 mA 30 ID = 175 mA 20 100 TJ = 25_C 10 TJ = 50_C 10 1 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 6 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 71172 S-40574—Rev. C, 29-Mar-04 www.vishay.com 3 Si1032R/X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Threshold Voltage Variance vs. Temperature 0.3 0.2 V GS(th) Variance (V) ID = 0.25 mA 0.1 −0.0 −0.1 −0.2 −0.3 −50 IGSS − (mA) 2.0 1.5 1.0 VGS = 2.8 V 0.5 0.0 −50 3.0 2.5 IGSS vs. Temperature −25 0 25 50 75 100 125 −25 0 25 50 75 100 125 TJ − Temperature (_C) TJ − Temperature (_C) BVGSS vs. Temperature BVGSS − Gate-to-Source Breakdown Voltage (V) 7 6 5 4 3 2 1 0 −50 −25 0 25 50 75 100 125 TJ − Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A, Si1032R Only) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 500_C/W t1 t2 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71172 S-40574—Rev. C, 29-Mar-04