SI1032R_10

Si1032R/X Vishay Siliconix N-Channel 1.5 V (G-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 5 at VGS = 4.5 V 20 7 at VGS = 2.5 V 9 at VGS = 1.8 V 10 at VGS = 1.5 V ID (mA) 200 175 150 50 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low-Side Switching • Low On-Resistance: 5  • Low Threshold: 0.9 V (typ.) • Fast Switching Speed: 35 ns • TrenchFET® Power MOSFETs: 1.5 V Rated • 2000 V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS SC-75A or SC-89 G 1 3 D • • • • • Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation APPLICATIONS S 2 Marking Code: G Top View Ordering Information: Si1032R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free) Si1032X-T1-GE3 (SC-89, Lead (Pb)-free -free Halogen-free) • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems • Power Supply Converter Circuits • Load/Power Switching Cell Phones, Pagers ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Si1032R Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currenta Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa for SC-75 TA = 25 °C TA = 85 °C TA = 25 °C TA = 85 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg ESD 250 280 145 200 110 500 200 250 130 - 55 to 150 2000 300 340 170 140 100 5s Steady State 20 ±6 210 150 600 240 300 150 mW °C V 200 140 mA 5s Si1032X Steady State Unit V Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes: a. Surface mounted on FR4 board. Document Number: 71172 S10-2544-Rev. F, 08-Nov-10 www.vishay.com 1 Si1032R/X Vishay Siliconix SPECIFICATIONS (TA = 25 °C, unless otherwise noted) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 2.8 V VDS = 0 V, VGS = ± 4.5 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 °C VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 200 mA Drain-Source On-State Resistancea RDS(on) VGS = 2.5 V, ID = 175 mA VGS = 1.8 V, ID = 150 mA VGS = 1.5 V, ID = 40 mA Forward Transconductancea gfs VSD Qg Qgs Qgd td(on) tr td(off) tf VDD = 10 V, RL = 47  ID  200 mA, VGEN = 4.5 V, Rg = 10  VDS = 10 V, VGS = 4.5 V, ID = 250 mA VDS = 10 V, ID = 200 mA IS = 150 mA, VGS = 0 V 750 75 225 50 25 50 25 ns pC 0.5 1.2 Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 250 5 7 9 10 S V  0.40 0.7 ± 0.5 ± 1.0 1.2 ± 1.0 ± 3.0 1 10 mA µA V Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 0.5 VGS = 5 V thru 1.8 V 0.4 ID - Drain Current (mA) ID - Drain Current (A) 600 TJ = - 55 °C 500 25 °C 400 125 °C 0.3 300 0.2 200 0.1 1V 0.0 0 1 2 3 4 5 6 100 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics www.vishay.com 2 Document Number: 71172 S10-2544-Rev. F, 08-Nov-10 Si1032R/X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 50 100 VGS = 0 V f = 1 MHz RDS(on) - On-Resistance (Ω) 40 C - Capacitance (pF) 80 Ciss 60 30 20 VGS = 1.8 V 10 VGS = 2.5 V 0 0 50 100 150 VGS = 4.5 V 200 250 40 Coss 20 Crss 0 0 4 8 12 16 20 ID - Drain Current (mA) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 5 VDS = 10 V ID = 150 mA 4 R DS(on) - On-Resistance (Normalized) 1.40 1.60 Capacitance VGS - Gate-to-Source Voltage (V) VGS = 4.5 V ID = 200 mA 1.20 VGS = 1.8 V ID = 175 mA 3 2 1.00 1 0.80 0 0.0 0.2 0.4 0.6 0.8 0.60 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge 1000 TJ = 125 °C R DS(on) - On-Resistance (Ω) 40 I S - Source Current (mA) 50 On-Resistance vs. Junction Temperature 100 TJ = 25 °C ID = 200 mA 30 10 TJ = 50 °C 20 ID = 175 mA 10 1 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 6 VSD - S ource-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Surge-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 71172 S10-2544-Rev. F, 08-Nov-10 www.vishay.com 3 Si1032R/X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 0.3 3.0 0.2 ID = 0.25 mA V GS(th) Variance (V) 0.1 IGSS - (µA) 2.5 2.0 0.0 1.5 - 0.1 1.0 VGS = 2.8 V - 0.2 0.5 - 0.3 - 50 - 25 0 25 50 75 100 125 0.0 - 50 - 25 0 25 50 75 100 125 TJ - Temperature (°C) TJ - Temperature (°C) Threshold Voltage Variance vs. Temperature BVGSS - Gate-to-Source Breakdown Voltage (V) 7 6 5 4 3 2 1 0 - 50 IGSS vs. Temperature - 25 0 25 50 75 100 125 TJ - Temperature (°C) BVGSS vs. Temperature 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 500 °C/W t1 t2 Single Pulse 0.01 10- 4 10- 3 10- 2 1 Square Wave Pulse Duration (s) 10- 1 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A, Si1032R Only) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71172. www.vishay.com 4 Document Number: 71172 S10-2544-Rev. F, 08-Nov-10 Package Information www.vishay.com SC-75A: 3-LEADS L2 D e2 B1(b1) 1 2 Vishay Siliconix D A 2X e1 3 E/2 1 2 E1 E 1 1 bbb 1 2 D C B B 2X bbb C 3 4 B e3 D D 2X B1 b1 With Tin Planting c1 Base Metal A2 2XB1 ddd M C A– B Section B-B 5 A D C 4X Seating Plane A1 D Notes Dimensions in millimeters will govern. 1. Dimension D does not include mold flash, protrusions or gate burrs. Mold flash protrusions or gate burrs shall not exceed 0.10 mm per end. Dimension E1 does not include Interlead flash or protrusion. Interlead flash or protrusion shall not exceed 0.10 mm per side. 2. Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, tie bar burrs, gate burrs and interelead flash, but including any mismatch between the top and bottom of the plastic body. 3. Datums A, B and D to be determined 0.10 mm from the lead tip. 4. Terminal positions are shown for reference only. 5. These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. MILLIMETERS DIM. A A1 A2 B1 b1 c c1 D E E1 e1 e2 e3 L L1 L2  1 0° 4° 0.15 MIN. 0.00 0.65 0.19 0.17 0.13 0.10 1.48 1.50 0.66 NOM. 0.70 1.575 1.60 0.76 0.50 BSC 1.00 BSC 0.50 BSC 0.205 0.40 REF 0.15 BSC 8° 10° 0.30 MAX. 0.80 0.10 0.80 0.24 0.21 0.15 0.12 1.68 1.70 0.86 1, 2 5 5 1, 2 5 NOTE DIMENSIONS aaa bbb ccc ddd TOLERANCES 0.10 0.10 0.10 0.10 ECN: E11-2210-Rev. D, 08-Aug-11 DWG: 5868 Revision: 08-Aug-11 1 Document Number: 71348 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 C L1 3 L D bbb D 3 bbb Package Information Vishay Siliconix SC89 3 X E D A C H L 3 DETAIL X MILLIMETERS Dim A b 1 2 INCHES Min 0.024 0.009 0.004 0.059 0.030 Min 0.60 0.23 0.10 1.50 0.75 Max 0.80 0.33 0.20 1.70 0.95 Max 0.031 0.013 0.008 0.067 0.037 e1 e b C D E e e1 H L 1.00 BSC 0.50 BSC 1.50 0.30 1.70 0.50 0.040 BSC 0.020 BSC 0.059 0.012 0.067 0.020 ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5869 Document Number: 71377 06-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-75A: 3-Lead 0.014 (0.356) (1.803) 0.071 0.264 (0.660) 0.054 (1.372) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index (0.503) 0.020 (0.798) 0.031 APPLICATION NOTE Document Number: 72603 Revision: 21-Jan-08 www.vishay.com 19 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-89: 3-Lead RECOMMENDED MINIMUM PADS FOR SC-89: 3-LEAD 0.0200 (0.51) ) 0.0150 (0.38 ) ) (1.75 ) ) 0.0690 0.0170 0.0250 (0.64) ) 0.0550 (1.40 ) ) Recommended Minimum Pads Dimensions in Inches/(mm) 0.0260 0.0150 (0.38 ) ) Return to Index Return to Index APPLICATION NOTE www.vishay.com 20 (0.66 ) ) (0.43 ) ) Document Number: 72604 Revision: 21-Jan-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1