Si1034CX
Vishay Siliconix
Dual N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () 0.396 at VGS = 4.5 V 20 0.456 at VGS = 2.5 V 0.546 at VGS = 1.8 V 0.760 at VGS = 1.5 V ID (A) 0.5 0.2 0.2 0.05 0.75 Qg (Typ.)
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Gate-Source ESD Protected: 1000 V • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load/Power Switching for Portable Devices • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems • Power Supply Converter Circuits
SC-89
S1 1 6 D1
Marking Code 4 XX YY Lot Traceability and Date Code Part # Code
G1
2
5
G2
D2
3
4
S2
Top View Ordering Information: Si1034CX-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 20 ±8 0.61a, b 0.49a, b 2 0.18a, b 0.22a, b 0.14a, b - 55 to 150 Unit V
A A W °C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambientb Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 5 s. t 5 s Steady State Symbol RthJA Typical 470 560 Maximum 565 675 Unit °C/W
Document Number: 67468 S11-0241-Rev. A, 14-Feb-11
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Si1034CX
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 8 V VDS = 0 V, VGS = ± 4.5 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 85 °C VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 0.5 A Drain-Source On-State Resistancea RDS(on) VGS = 2.5 V, ID = 0.2 A VGS = 1.8 V, ID = 0.2 A VGS = 1.5 V, ID = 0.05 A Forward Transconductance Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time ISM VSD trr Qrr ta tb IF = 0.5 A, dI/dt = 100 A/µs IS = 0.5 A 0.8 10 2 5 5 2 1.2 15 4 ns A V nC gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 10 V, RL = 20 ID 0.5 A, VGEN = 4.5 V, Rg = 1 f = 1 MHz 2.4 VDS = 10 V, VGS = 8 V, ID = 0.6 A VDS = 10 V, VGS = 4.5 V, ID = 0.6 A VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, ID = 0.5 A 2 0.330 0.380 0.420 0.505 7.5 43 14 8 1.3 0.75 0.15 0.13 12.2 11 16 26 11 24.4 20 24 39 20 ns 2 1.2 nC pF 0.396 0.456 0.546 0.760 S 0.4 20 17 - 1.8 1.0 ± 30 ±1 1 10 A µA V mV/°C V Symbol Test Conditions Min. Typ. Max. Unit
Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Document Number: 67468 S11-0241-Rev. A, 14-Feb-11
Si1034CX
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.8 1.0E-04
1.0E-05 IGSS - Gate Current (mA) 0.6 IGSS - Gate Current (A) TJ = 150 °C 1.0E-06 TJ = 25 °C
0.4 TJ = 25 °C
1.0E-07
0.2
1.0E-08
0 0 2 4 6 8 10 12 14
1.0E-09 0 4 7 11 14 VGS - Gate-to-Source Voltage (V)
VGS - Gate-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
2 0.5
Gate Current vs. Gate-Source Voltage
VGS = 5 V thru 2 V 1.5 ID - Drain Current (A) ID - Drain Current (A)
0.4
0.3 TC = 25 °C 0.2
VGS = 1.5 V 1
0.5 0.1 VGS = 1 V 0 0 0.5 1 1.5 2 0 0 0.3 0.6 0.9 1.2 1.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) TC = 125 °C TC = - 55 °C
Output Characteristics
0.80 VGS = 1.5 V RDS(on) - On-Resistance (Ω) VGS = 1.8 V 0.60 C - Capacitance (pF) Ciss 45 60
Transfer Characteristics
30 Coss 15
VGS = 4.5 V 0.40 VGS = 10 V
Crss 0.20 0 0.5 1 ID - Drain Current (A) 1.5 2 0 0 5 10 15 20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
Document Number: 67468 S11-0241-Rev. A, 14-Feb-11
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Si1034CX
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
8 ID = 0.6 A VGS - Gate-to-Source Voltage (V) VDS = 5 V VDS = 10 V RDS(on) - On-Resistance (Normalized) 6 1.4 1.6 ID = 0.5 A VGS = 4.5 V
1.2
4 VDS = 16 V 2
1.0
0.8 VGS = 2.5 V 0 0 0.5 1 1.5 0.6 - 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
10 0.8
On-Resistance vs. Junction Temperature
ID = 0.5 A RDS(on) - On-Resistance (Ω) 0.6
IS - Source Current (A)
TJ = 150 °C 1
0.4
TJ = 125 °C TJ = 25 °C
TJ = 25 °C
0.2
0.1 0.0
0 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Soure-Drain Diode Forward Voltage
0.75 ID = 250 μA 0.65 1.8 Power (W) VGS(th) (V) 2.7
On-Resistance vs. Gate-to-Source Voltage
2.25
0.55
1.35
0.9 0.45 0.45
0.35 - 50
- 25
0
25
50
75
100
125
150
0 0.01
0.1
1 Time (s)
10
100
TJ - Temperature (°C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
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Document Number: 67468 S11-0241-Rev. A, 14-Feb-11
Si1034CX
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10 0.24
Limited by RDS(on)* ID - Drain Current (A) 1 BVDSS Limited 100 μs 1 ms 10 ms 0.1 0.06 100 ms TC = 25 °C Single Pulse 0.01 0.1 1 10 1s 10 s, DC 100 Power (W) 0.18
0.12
0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C)
VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2 0.1 0.1 0.05 0.02
0.01 0.0001
Single Pulse 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 100
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67468.
Document Number: 67468 S11-0241-Rev. A, 14-Feb-11
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Package Information
Vishay Siliconix
SC89: 6 LEADS (SOT 563F)
2 3
D E1/2
4
aaa
C
e1
A
2X
4
D
B
E/2 E
2
3
E1
2X
aaa C
5
1
2
3
2X
bbb C
e
B
4
6X b
ccc
M
C
A–B D
A1
L1 L
A
A1
SEE DETAIL “A”
MILLIMETERS Dim A A1 b c D E E1 e e1 L L1 Min
0.56 0.00 0.15 0.10 1.50 1.55
Max
0.60 0.10 0.30 0.18 1.70 1.70
NOTES: 1. 2. 2 Dimensions in millimeters. Dimension D does not include mold flash, protrusions or gate burrs. Mold flush, protrusions or gate burrs shall not exceed 0.15 mm per dimension E1 does not include interlead flash or protrusion, interlead flash or protrusion shall not exceed 0.15 mm per side. Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and the bottom of the plastic body. Datums A, B and D to be determined 0.10 mm from the lead tip. Terminal numbers are shown for reference only. These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip.
3. 3
1.20 BSC 0.50 BSC 1.00 BSC 0.35 BSC 0.20 BSC
4 4.
5. 5 6. 6
ECN: E-00499—Rev. B, 02-Jul-01 DWG: 5880
Document Number: 71612 25-Jun-01
ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ
DETAIL “A”
ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ
6 5
4
SECTION B-B C
6
ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ
Note
Symbol
aaa bbb ccc
Tolerances Of Form And Position
0.10 0.10 0.10
2, 3
2, 3
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead
0.051 (1.300)
(1.753)
0.012 (0.300) 0.051 (0.201)
0.020 (0.500)
Recommended Minimum Pads Dimensions in Inches/(mm)
Return to Index Return to Index
(0.798)
0.069
0.031
(0.478)
0.019
APPLICATION NOTE
Document Number: 72605 Revision: 21-Jan-08
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Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 11-Mar-11
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