SI1034CX

Si1034CX Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.396 at VGS = 4.5 V 20 0.456 at VGS = 2.5 V 0.546 at VGS = 1.8 V 0.760 at VGS = 1.5 V ID (A) 0.5 0.2 0.2 0.05 0.75 Qg (Typ.) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Gate-Source ESD Protected: 1000 V • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load/Power Switching for Portable Devices • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems • Power Supply Converter Circuits SC-89 S1 1 6 D1 Marking Code 4 XX YY Lot Traceability and Date Code Part # Code G1 2 5 G2 D2 3 4 S2 Top View Ordering Information: Si1034CX-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 20 ±8 0.61a, b 0.49a, b 2 0.18a, b 0.22a, b 0.14a, b - 55 to 150 Unit V A A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 5 s. t 5 s Steady State Symbol RthJA Typical 470 560 Maximum 565 675 Unit °C/W Document Number: 67468 S11-0241-Rev. A, 14-Feb-11 www.vishay.com 1 Si1034CX Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 8 V VDS = 0 V, VGS = ± 4.5 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 85 °C VDS =  5 V, VGS = 4.5 V VGS = 4.5 V, ID = 0.5 A Drain-Source On-State Resistancea RDS(on) VGS = 2.5 V, ID = 0.2 A VGS = 1.8 V, ID = 0.2 A VGS = 1.5 V, ID = 0.05 A Forward Transconductance Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time ISM VSD trr Qrr ta tb IF = 0.5 A, dI/dt = 100 A/µs IS = 0.5 A 0.8 10 2 5 5 2 1.2 15 4 ns A V nC gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 10 V, RL = 20  ID  0.5 A, VGEN = 4.5 V, Rg = 1  f = 1 MHz 2.4 VDS = 10 V, VGS = 8 V, ID = 0.6 A VDS = 10 V, VGS = 4.5 V, ID = 0.6 A VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, ID = 0.5 A 2 0.330 0.380 0.420 0.505 7.5 43 14 8 1.3 0.75 0.15 0.13 12.2 11 16 26 11 24.4 20 24 39 20 ns  2 1.2 nC pF 0.396 0.456 0.546 0.760 S  0.4 20 17 - 1.8 1.0 ± 30 ±1 1 10 A µA V mV/°C V Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 67468 S11-0241-Rev. A, 14-Feb-11 Si1034CX Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.8 1.0E-04 1.0E-05 IGSS - Gate Current (mA) 0.6 IGSS - Gate Current (A) TJ = 150 °C 1.0E-06 TJ = 25 °C 0.4 TJ = 25 °C 1.0E-07 0.2 1.0E-08 0 0 2 4 6 8 10 12 14 1.0E-09 0 4 7 11 14 VGS - Gate-to-Source Voltage (V) VGS - Gate-Source Voltage (V) Gate Current vs. Gate-Source Voltage 2 0.5 Gate Current vs. Gate-Source Voltage VGS = 5 V thru 2 V 1.5 ID - Drain Current (A) ID - Drain Current (A) 0.4 0.3 TC = 25 °C 0.2 VGS = 1.5 V 1 0.5 0.1 VGS = 1 V 0 0 0.5 1 1.5 2 0 0 0.3 0.6 0.9 1.2 1.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) TC = 125 °C TC = - 55 °C Output Characteristics 0.80 VGS = 1.5 V RDS(on) - On-Resistance (Ω) VGS = 1.8 V 0.60 C - Capacitance (pF) Ciss 45 60 Transfer Characteristics 30 Coss 15 VGS = 4.5 V 0.40 VGS = 10 V Crss 0.20 0 0.5 1 ID - Drain Current (A) 1.5 2 0 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance Document Number: 67468 S11-0241-Rev. A, 14-Feb-11 www.vishay.com 3 Si1034CX Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 8 ID = 0.6 A VGS - Gate-to-Source Voltage (V) VDS = 5 V VDS = 10 V RDS(on) - On-Resistance (Normalized) 6 1.4 1.6 ID = 0.5 A VGS = 4.5 V 1.2 4 VDS = 16 V 2 1.0 0.8 VGS = 2.5 V 0 0 0.5 1 1.5 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge 10 0.8 On-Resistance vs. Junction Temperature ID = 0.5 A RDS(on) - On-Resistance (Ω) 0.6 IS - Source Current (A) TJ = 150 °C 1 0.4 TJ = 125 °C TJ = 25 °C TJ = 25 °C 0.2 0.1 0.0 0 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Soure-Drain Diode Forward Voltage 0.75 ID = 250 μA 0.65 1.8 Power (W) VGS(th) (V) 2.7 On-Resistance vs. Gate-to-Source Voltage 2.25 0.55 1.35 0.9 0.45 0.45 0.35 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (s) 10 100 TJ - Temperature (°C) Threshold Voltage Single Pulse Power, Junction-to-Ambient www.vishay.com 4 Document Number: 67468 S11-0241-Rev. A, 14-Feb-11 Si1034CX Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 0.24 Limited by RDS(on)* ID - Drain Current (A) 1 BVDSS Limited 100 μs 1 ms 10 ms 0.1 0.06 100 ms TC = 25 °C Single Pulse 0.01 0.1 1 10 1s 10 s, DC 100 Power (W) 0.18 0.12 0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 0.01 0.0001 Single Pulse 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 100 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67468. Document Number: 67468 S11-0241-Rev. A, 14-Feb-11 www.vishay.com 5 Package Information Vishay Siliconix SC89: 6 LEADS (SOT 563F) 2 3 D E1/2 4 aaa C e1 A 2X 4 D B E/2 E 2 3 E1 2X aaa C 5 1 2 3 2X bbb C e B 4 6X b ccc M C A–B D A1 L1 L A A1 SEE DETAIL “A” MILLIMETERS Dim A A1 b c D E E1 e e1 L L1 Min 0.56 0.00 0.15 0.10 1.50 1.55 Max 0.60 0.10 0.30 0.18 1.70 1.70 NOTES: 1. 2. 2 Dimensions in millimeters. Dimension D does not include mold flash, protrusions or gate burrs. Mold flush, protrusions or gate burrs shall not exceed 0.15 mm per dimension E1 does not include interlead flash or protrusion, interlead flash or protrusion shall not exceed 0.15 mm per side. Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and the bottom of the plastic body. Datums A, B and D to be determined 0.10 mm from the lead tip. Terminal numbers are shown for reference only. These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. 3. 3 1.20 BSC 0.50 BSC 1.00 BSC 0.35 BSC 0.20 BSC 4 4. 5. 5 6. 6 ECN: E-00499—Rev. B, 02-Jul-01 DWG: 5880 Document Number: 71612 25-Jun-01 ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ DETAIL “A” ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ 6 5 4 SECTION B-B C 6 ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ Note Symbol aaa bbb ccc Tolerances Of Form And Position 0.10 0.10 0.10 2, 3 2, 3 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead 0.051 (1.300) (1.753) 0.012 (0.300) 0.051 (0.201) 0.020 (0.500) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index (0.798) 0.069 0.031 (0.478) 0.019 APPLICATION NOTE Document Number: 72605 Revision: 21-Jan-08 www.vishay.com 21 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1