SI1034X_05

Si1034X Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 5 at VGS = 4.5 V 20 7 at VGS = 2.5 V 9 at VGS = 1.8 V 10 at VGS = 1.5 V ID (mA) 200 175 150 50 FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET: 1.5 V Rated • Low-Side Switching • Low On-Resistance: 5 Ω • Low Threshold: 0.9 V (typ.) • Fast Switching Speed: 35 ns (typ.) • 1.5 V Operation • Gate-Source ESD Protected: 2000 V RoHS COMPLIANT SC-89 S1 1 6 D1 BENEFITS • Ease in Driving Switches • Low Offset (Error) Voltage Marking Code: L G1 2 5 G2 • Low-Voltage Operation • High-Speed Circuits • Low Battery Voltage Operation D2 3 4 S2 Top View Ordering Information: Si1034X-T1-E3 (Lead (Pb)-free) Si1034X-T1-GE3 (Lead (Pb)-free and Halogen-free) APPLICATIONS • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems • Power Supply Converter Circuits • Load/Power Switching Cell Phones, Pagers ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentb TA = 25 °C TA = 85 °C TA = 25 °C TA = 85 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg ESD 450 280 145 - 55 to 150 2000 190 140 650 380 250 130 mW °C V 5s 20 ±5 180 130 mA Steady State Unit V Continuous Source Current (Diode Conduction) Maximum Power Dissipationa Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes: a. Surface Mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71427 S-80643-Rev. B, 24-Mar-08 www.vishay.com 1 Si1034X Vishay Siliconix SPECIFICATIONS TA = 25 °C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistance a Symbol VGS(th) IGSS IDSS ID(on) Test Conditions VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 2.8 V VDS = 0 V, VGS = ± 4.5 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 85 °C VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 200 mA VGS = 2.5 V, ID = 175 mA VGS = 1.8 V, ID = 150 mA VDS = 1.5 V, ID = 40 mA VDS = 10 V, ID = 200 mA IS = 150 mA, VGS = 0 V Min. 0.40 Typ. Max. 1.2 Unit V µA nA µA mA ± 0.5 ± 1.0 1 250 ± 1.0 ± 3.0 500 10 5 7 9 10 0.5 1.2 S V Ω RDS(on) Forward Transconductance Diode Forward Voltage Dynamic b a a gfs VSD Qg Qgs Qgd td(on) tr td(off) tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 750 VDS = 10 V, VGS = 4.5 V, ID = 150 mA 75 225 50 VDD = 10 V, RL = 47 Ω ID ≅ 200 mA, VGEN = 4.5 V, RG = 10 Ω 25 50 25 ns pC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 0.5 VGS = 5 thru 1.8 V 0.4 I D - Drain Current (mA) I D - Drain Current (A) 600 TJ = - 55 °C 500 25 °C 125 °C 400 0.3 300 0.2 200 0.1 1V 0.0 0 1 2 3 4 5 6 100 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics www.vishay.com 2 Document Number: 71427 S-80643-Rev. B, 24-Mar-08 Si1034X Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 40 100 VGS = 0 V f = 1 MHz R DS(on) - On-Resistance (Ω) 80 30 C - Capacitance (pF) Ciss 60 20 40 Coss VGS = 1.8 V 10 VGS = 2.5 V VGS = 4.5 V 0 0 50 100 150 200 250 20 0 0 Crss 4 8 12 16 20 I D - Drain Current (mA) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 5 VDS = 10 V ID = 150 mA 4 R DS(on) - On-Resistance 1.40 1.60 Capacitance VGS - Gate-to-Source Voltage (V) VGS = 4.5 V ID = 200 mA (Normalized) 1.20 VGS = 1.8 V ID = 175 mA 1.00 3 2 1 0.80 0 0.0 0.2 0.4 0.6 0.8 0.60 - 50 - 25 0 25 50 75 100 125 Q g - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge 1000 TJ = 125 °C R DS(on) - On-Resistance (Ω) 40 I S - Source Current (mA) 50 On-Resistance vs. Junction Temperature ID = 200 mA ID = 175 mA 30 100 TJ = 25 °C TJ = 50 °C 10 20 10 1 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 6 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Surge-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 71427 S-80643-Rev. B, 24-Mar-08 www.vishay.com 3 Si1034X Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 0.3 3.0 0.2 VGS(th) Variance (V) ID = 0.25 mA 0.1 IGSS - (µA) 2.5 2.0 0.0 1.5 - 0.1 1.0 VGS = 2.8 V - 0.2 0.5 - 0.3 - 50 - 25 0 25 50 75 100 125 0.0 - 50 - 25 0 25 50 75 100 125 TJ - Temperature (°C) TJ - Temperature (°C) Threshold Voltage Variance vs. Temperature BVGSS - Gate-to-Source Breakdown Voltage (V) 7 6 5 4 3 2 1 0 - 50 IGSS vs. Temperature - 25 0 25 50 75 100 125 TJ - Temperature (°C) BVGSS vs. Temperature 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 500 °C/W Single Pulse 0.01 10 -4 10 -3 10-2 10 -1 1 Square Wave Pulse Duration (s) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71427. www.vishay.com 4 Document Number: 71427 S-80643-Rev. B, 24-Mar-08 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1