SI1035X

Si1035X New Product Vishay Siliconix Complementary N- and P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 5 @ VGS = 4.5 V N-Channel 20 7 @ VGS = 2.5 V 9 @ VGS = 1.8 V 10 @ VGS = 1.5 V 8 @ VGS = –4.5 V P-Channel –20 12 @ VGS = –2.5 V 15 @ VGS = –1.8 V 20 @ VGS = –1.5 V ID (mA) 200 175 150 50 –150 –125 –100 –30 1.5 V Rated FEATURES D Very Small Footprint D High-Side Switching D Low On-Resistance: N-Channel, 5 W P-Channel, 8 W D Low Threshold: "0.9 V (typ) D Fast Switching Speed: 45 ns (typ) D 1.5-V Operation D Gate-Source ESD Protection BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation APPLICATIONS D D D D Replace Digital Transistor, Level-Shifter Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers SC-89 S1 1 6 D1 G1 2 5 G2 Marking Code: M D2 3 4 S2 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 85_C TA = 25_C TA = 85_C P-Channel 5 secs "5 Symbol VDS VGS 5 secs Steady State 20 Steady State –20 Unit V 190 ID IDM IS PD TJ, Tstg ESD 450 280 145 140 650 180 130 –155 –110 –650 –145 –105 mA –380 250 130 mW _C V 380 250 130 –55 to 150 2000 –450 280 145 Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes a. Surface Mounted on FR4 Board. b. Pulse width limited by maximum junction temperature. Document Number: 71426 S-03201—Rev. A, 12-Mar-01 www.vishay.com 1 Si1035X Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "2.8 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "4.5 V VDS = 16 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = –16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 85_C VDS = –16 V, VGS = 0 V, TJ = 85_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 4.5 V VDS = –5 V, VGS = –4.5 V VGS = 4.5 V, ID = 200 mA VGS = –4.5 V, ID = –150 mA VGS = 2.5 V, ID = 175 mA Drain-Source On-State Resistancea rDS(on) VGS = –2.5 V, ID = –125 mA VGS = 1.8 V, ID = 150 mA VGS = –1.8 V, ID = –100 mA VGS = 1.5 V, ID = 40 mA VGS = –1.5 V, ID = –30 mA Forward Transconductancea gfs VDS = 10 V, ID = 200 mA VDS = –10 V, ID = –150 mA IS = 150 mA, VGS = 0 V IS = –150 mA, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.5 0.4 1.2 –1.2 V S 250 –200 5 8 7 12 9 15 10 20 W mA 0.40 V –0.40 "0.5 "0.5 "1.5 "1.0 1 –1 "1.0 "1.0 "3.0 "3.0 500 –500 10 –10 nA mA Symbol Test Condition Min Typ Max Unit mA Diode Forward Voltagea VSD Dynamicb N-Ch Total Gate Charge Qg N-Channel VDS = 10 V, VGS = 4.5 V, ID = 150 mA Gate-Source Charge Qgs P-Channel VDS = –10 V, VGS = –4.5 V, ID = –150 mA P-Ch N-Ch P-Ch N-Ch P-Ch N-Channel VDD = 10 V, RL = 47 W ID ^ 200 mA, VGEN = 4.5 V, RG = 10 W P-Channel VDD = –10 V, RL = 65 W ID ^ –150 A, VGEN = –4.5 V, RG = 10 W N-Ch P-Ch N-Ch P-Ch 750 1500 75 pC 150 225 450 75 80 ns 75 90 Turn-Off Time tOFF Gate-Drain Charge Qgd Turn-On Time tON Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 71426 S-03201—Rev. A, 12-Mar-01 Si1035X New Product TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Output Characteristics 0.5 VGS = 5 thru 1.8 V 0.4 I D – Drain Current (mA) I D – Drain Current (A) 600 TJ = –55_C 500 25_C 400 125_C 300 Vishay Siliconix N CHANNEL Transfer Characteristics 0.3 0.2 200 0.1 1V 0.0 0 1 2 3 4 5 6 100 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 40 r DS(on) – On-Resistance ( W ) 100 VGS = 0 V f = 1 MHz 30 C – Capacitance (pF) 80 Capacitance Ciss 60 20 40 Coss VGS = 1.8 V 10 VGS = 2.5 V VGS = 4.5 V 0 0 50 100 150 200 250 20 0 0 Crss 4 8 12 16 20 ID – Drain Current (mA) VDS – Drain-to-Source Voltage (V) Gate Charge 5 V GS – Gate-to-Source Voltage (V) VDS = 10 V ID = 150 mA 4 1.60 On-Resistance vs. Junction Temperature r DS(on) – On-Resistance ( W) (Normalized) 1.40 VGS = 4.5 V ID = 200 mA 3 1.20 VGS = 1.8 V ID = 175 mA 2 1.00 1 0.80 0 0.0 0.2 0.4 0.6 0.8 0.60 –50 –25 0 25 50 75 100 125 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Document Number: 71426 S-03201—Rev. A, 12-Mar-01 www.vishay.com 3 Si1035X Vishay Siliconix New Product N CHANNEL On-Resistance vs. Gate-to-Source Voltage 50 TJ = 125_C r DS(on) – On-Resistance ( W ) I S – Source Current (mA) 40 ID = 200 mA TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 1000 100 TJ = 25_C 30 ID = 175 mA 10 TJ = 50_C 20 10 1 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 6 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage Variance vs. Temperature 0.3 3.0 IGSS vs. Temperature 0.2 V GS(th) Variance (V) ID = 0.25 mA 0.1 IGSS – (mA) 2.5 2.0 –0.0 1.5 –0.1 1.0 VGS = 2.8 V –0.2 0.5 –0.3 –50 –25 0 25 50 75 100 125 0.0 –50 –25 0 25 50 75 100 125 TJ – Temperature (_C) TJ – Temperature (_C) BVGSS vs. Temperature BVGSS – Gate-to-Source Breakdown Voltage (V) 7 6 5 4 3 2 1 0 –50 –25 0 25 50 75 100 125 TJ – Temperature (_C) www.vishay.com 4 Document Number: 71426 S-03201—Rev. A, 12-Mar-01 Si1035X New Product TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Output Characteristics 0.5 VGS = 5 thru 2.5 V 0.4 I D – Drain Current (A) 1.8 V 0.3 I D – Drain Current (mA) 2V 400 500 TJ = –55_C 25_C Vishay Siliconix P CHANNEL Transfer Characteristics 300 125_C 0.2 200 0.1 100 0.0 0 1 2 3 4 5 6 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 25 r DS(on) – On-Resistance ( W ) VGS = 1.8 V C – Capacitance (pF) 20 120 VGS = 0 V f = 1 MHz Capacitance 100 80 Ciss 15 VGS = 2.5 V 10 VGS = 4.5 V 5 60 40 Coss 20 Crss 0 4 8 12 16 20 0 0 200 400 600 800 1000 0 ID – Drain Current (mA) VDS – Drain-to-Source Voltage (V) Gate Charge 5 V GS – Gate-to-Source Voltage (V) VDS = 10 V ID = 150 mA 4 1.6 On-Resistance vs. Junction Temperature r DS(on) – On-Resistance ( W) (Normalized) 1.4 VGS = 4.5 V ID = 150 mA 1.2 3 2 1.0 VGS = 1.8 V ID = 125 mA 1 0.8 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.6 –50 –25 0 25 50 75 100 125 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Document Number: 71426 S-03201—Rev. A, 12-Mar-01 www.vishay.com 5 Si1035X Vishay Siliconix New Product P CHANNEL On-Resistance vs. Gate-to-Source Voltage 50 TJ = 125_C r DS(on) – On-Resistance ( W ) 40 ID = 150 mA 30 TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 1000 IS – Source Current (mA) 100 TJ = 25_C TJ = –55_C 10 20 10 ID = 125 mA 1 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 6 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage Variance vs. Temperature 0.3 3.0 IGSS vs. Temperature 0.2 V GS(th) Variance (V) ID = 0.25 mA 0.1 IGSS – (mA) 2.5 2.0 VGS = 2.8 V –0.0 1.5 –0.1 1.0 –0.2 0.5 –0.3 –50 –25 0 25 50 75 100 125 0.0 –50 –25 0 25 50 75 100 125 TJ – Temperature (_C) TJ – Temperature (_C) BVGSS vs. Temperature BVGSS – Gate-to-Source Breakdown Voltage (V) 0 –1 –2 –3 –4 –5 –6 –7 –50 –25 0 25 50 75 100 125 TJ – Temperature (_C) www.vishay.com 6 Document Number: 71426 S-03201—Rev. A, 12-Mar-01 Si1035X New Product TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix N OR P CHANNEL 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA =500_C/W Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Document Number: 71426 S-03201—Rev. A, 12-Mar-01 www.vishay.com 7