SI1040X-T1-GE3

Si1040X Vishay Siliconix Load Switch with Level-Shift PRODUCT SUMMARY VDS2 (V) 1.8 to 8 RDS(on) (Ω) 0.625 at VIN = 4.5 V 0.890 at VIN = 2.5 V 1.25 at VIN = 1.8 V ID (A) ± 0.43 ± 0.36 ± 0.3 FEATURES • • • • • • • Halogen-free Option Available TrenchFET® Power MOSFET 1.8 to 8 V Input RoHS COMPLIANT 1.5 to 8 V Logic Level Control ® Smallest LITTLE FOOT Package: 1.6 mm x 1.6 mm 2000 V ESD Protection On Input Switch, VON/OFF Adjustable Slew-Rate Si1040X 4 S2 Q2 6 R1, C1 2, 3 D2 DESCRIPTION The Si1040X includes a P- and N-Channel MOSFET in a single SC89-6 package. The low on-resistance P-Channel TrenchFET is tailored for use as a load switch. The N-Channel, with an external resistor, can be used as a level-shift to drive the P-Channel load-switch. The N-Channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The Si1040X operates on supply lines from 1.8 V to 8 V, and can drive loads up to 0.43 A. 5 ON/OFF Q1 1 R2 SC89-6 Top View R2 R1, C1 Marking Code ON/OFF P WL Lot Traceability and Date Code D2 3 4 S2 Part Number Code 1 6 D2 2 5 Ordering Information: Si1040X-T1-E3 (Lead (Pb)-free) Si1040X-T1-GE3 (Lead (Pb)-free and Halogen-free) TYPICAL APPLICATION CIRCUIT Si1040X 20 4 VIN Q2 R1 6 6 C1 Time (µs) 12 IL = 0.36 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF tr td(off) 4 td(on) 1 R2 R2 GND 0 0 6 8 10 R2 (kΩ) Note: For R2 switching variations with other VIN/R1 combinations See Typical Characteristics 2 4 2, 3 VOUT 16 Switching Variation R2 at V IN = 2.5 V, R1 = 20 kΩ tf 5 ON/OFF Q1 Co LOAD 8 Ci Document Number: 71809 S-80641-Rev. C, 24-Mar-08 www.vishay.com 1 Si1040X Vishay Siliconix COMPONENTS R1 R2 C1 Pull-Up Resistor Optional Slew-Rate Control Optional Slew-Rate Control Typical 10 kΩ to 1 mΩa Typical 0 to 100 kΩa Typical 1000 pF The Si1040X is ideally suited for high-side load switching in portable applications. The integrated N-Channel level-shift device saves space by reducing external components. The slew rate is set externally so that rise-times can be tailored to different load types. Notes: a. Minimum R1 value should be at least 10 x R2 to ensure Q1 turnon. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Input Voltage ON/OFF Voltage Load Current Continuous Intrinsic Diode Conduction Maximum Power Dissipation a a Symbol VIN VON/OFF Continuousa, b Pulsedb, c IL IS PD TJ, Tstg ESD Limit 8 8 ± 0.43 ± 1.0 - 0.15 0.174 - 55 to 150 2 Unit V A W °C kV Operating Junction and Storage Temperature Range ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 Ω) THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (Continuous Current) Maximum Junction-to-Foot (Q2) Notes: a. Surface Mounted on 1" x 1" FR4 board. a Symbol RthJA RthJC Typical 600 450 Maximum 720 540 Unit °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter OFF Characteristics Reverse Leakage Current Diode Forward Voltage ON Characteristics Input Voltage Range On-Resistance (P-Channel) at 1 A VIN VON/OFF = 1.5 V, VIN = 4.5 V, ID = 0.43 A RDS(on) VON/OFF = 1.5 V, VIN = 2.5 V, ID = 0.36 A VON/OFF = 1.5 V, VIN = 1.8 V, ID = 0.3 A On-State (P-Channel) Drain Current ID(on) VIN-OUT ≤ 0.2 V, VIN = 5 V, VON/OFF = 1.5 V VIN-OUT ≤ 0.3 V, VIN = 3 V, VON/OFF = 1.5 V 1 0.8 1.8 0.500 0.710 1.0 8 0.625 0.890 1.25 A Ω V IFL VSD VIN = 8 V, VON/OFF = 0 V IS = - 0.15 A 0.85 1 1.2 µA V Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Surface Mounted on FR4 board. b. VIN = 8 V, VON/OFF = 8 V, TA = 25 °C. c. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71809 S-80641-Rev. C, 24-Mar-08 Si1040X Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 VON/OFF = 1.5 to 8 V 1.2 0.8 1.0 V DROP (V) V DROP (V) 0.6 TJ = 125 °C 0.4 TJ = 25 °C 0.8 TJ = 125 °C 0.6 0.4 0.2 0.2 0.0 0.0 0.0 0.0 TJ = 25 °C 1.4 VON/OFF = 1.5 to 8 V 0.2 0.4 0.6 0.8 1.0 I L - (A) 1.2 1.4 1.6 1.8 2.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 I L - (A) VDROP vs. IL at VIN = 4.5 V 1.6 1.4 1.2 V DROP (V) 1.0 0.8 0.6 0.4 0.2 0.0 0.0 TJ = 125 °C TJ = 25 °C VON/OFF = 1.5 to 8 V 0.8 0.7 0.6 0.5 VDROP vs. IL at VIN = 2.5 V VON/OFF = 1.5 to 8 V VDROP (V) TJ = 125 °C 0.4 0.3 TJ = 25 °C 0.2 0.1 0.0 0.2 0.4 0.6 0.8 I L - (A) 1.0 1.2 1.4 1.6 0 1 2 VIN (V) 3 4 5 VDROP vs. IL at VIN = 1.8 V 0.20 0.15 0.10 VIN = 1.8 V 0.05 VIN = 4.5 V 0.00 - 0.05 - 0.10 - 0.15 - 50 IL = 0.3 A VON/OFF = 1.8 to 8 V R SS(on) - On-Resistance (Ω) 1.6 1.4 1.2 1.0 VDROP vs. IL at VIN = 0.5 V IL = 0.3 A VON/OFF = 1.5 to 8 V VDROP Variance (V) TJ = 125 °C 0.8 0.6 TJ = 25 °C 0.4 0.2 0.0 - 25 0 25 50 75 100 125 150 0 1 2 VIN (V) 3 4 5 TJ - Junction Temperature (°C) VDROP Variance vs. Junction Temperature Document Number: 71809 S-80641-Rev. C, 24-Mar-08 On-Resistance vs. Input Voltage www.vishay.com 3 Si1040X Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.6 1.4 R DS(on) - On-Resistance 1.2 VIN = 4.5 V (Normalized) 1.0 0.8 0.6 0.4 4 0.2 0.0 - 50 0 - 25 0 25 50 75 100 125 150 0 2 4 R2 (kΩ) 6 8 10 TJ - Junction Temperature (°C) td(on) Time (µs) 12 IL = 0.3 A VON/OFF = 1.5 to 8 V VIN = 1.8 V 16 IL = 0.36 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF tf 20 8 td(off) tr Normalized On-Resistance vs. Junction Temperature 20 tf 16 16 20 Switching Variation R2 at VIN = 4.5 V, R1 = 20 kΩ tf tr Time (µs) Time (µs) 12 IL = 0.36 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF 12 IL = 0.36 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF 8 tr 8 td(off) 4 td(on) 0 0 2 4 R2 (kΩ) 6 8 10 0 0 2 4 td(off) td(on) 4 R2 (kΩ) 6 8 10 Switching Variation R2 at VIN = 2.5 V, R1 = 20 kΩ 80 td(off) 60 IL = 0.36 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF tf 60 Time (µF) 80 Switching Variation R2 at VIN = 1.8 V, R1 = 20 kΩ IL = 0.36 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF tf td(off) Time (µs) 40 40 20 tr td(on) 0 20 40 R2 (kΩ) 60 80 100 20 tr td(on) 0 0 0 20 40 60 R2 (kΩ) 80 100 Switching Variation R2 at VIN = 4.5 V, R1 = 300 kΩ www.vishay.com 4 Switching Variation R2 at VIN = 2.5 V, R1 = 300 kΩ Document Number: 71809 S-80641-Rev. C, 24-Mar-08 Si1040X Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 80 tf 60 td(off) 40 IL = 0.36 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF Time (µs) tr td(on) 20 0 0 20 40 R2 (kΩ) 60 80 100 Switching Variation R2 at VIN = 1.8 V, R1 = 300 kΩ 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 720 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 4. Surface Mounted 10 100 600 Square Wave Pulse Dureation (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71809. Document Number: 71809 S-80641-Rev. C, 24-Mar-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1