SI1300BDL_10

Si1035X Vishay Siliconix Complementary N- and P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 5 at VGS = 4.5 V N-Channel 20 7 at VGS = 2.5 V 9 at VGS = 1.8 V 10 at VGS = 1.5 V 8 at VGS = - 4.5 V P-Channel - 20 12 at VGS = - 2.5 V 15 at VGS = - 1.8 V 20 at VGS = - 1.5 V ID (mA) 200 175 150 50 - 150 - 125 - 100 - 30 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET: 1.5 V Rated • Very Small Footprint • High-Side Switching • Low On-Resistance: N-Channel, 5  P-Channel, 8  • Low Threshold: ± 0.9 V (typ.) • Fast Switching Speed: 45 ns (typ.) • 1.5 V Operation • Gate-Source ESD Protected: 2000 V • Compliant to RoHS Directive 2002/95/EC SC-89 S1 1 6 D1 BENEFITS • • • • • Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation G1 2 5 G2 Marking Code: M D2 3 4 S2 APPLICATIONS Top View Ordering Information: Si1035X-T1-GE3 (Lead (Pb)-free and Halogen-free) • • • • Replace Digital Transistor, Level-Shifter Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentb Continuous Source Current (Diode Conduction) Maximum Power Dissipationa TA = 25 °C TA = 85 °C TA = 25 °C TA = 85 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg ESD 450 280 145 190 140 650 380 250 130 - 55 to 150 2000 - 450 280 145 180 130 5s Steady State 20 ±5 - 155 - 110 - 650 - 380 250 130 mW °C V - 145 - 105 mA 5s P-Channel Steady State - 20 Unit V Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71426 S10-2544-Rev. C, 08-Nov-10 www.vishay.com 1 Si1035X Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 2.8 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 4.5 V VDS = 16 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = - 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 85 °C VDS = - 16 V, VGS = 0 V, TJ = 85 °C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 4.5 V VDS = - 5 V, VGS = - 4.5 V VGS = 4.5 V, ID = 200 mA VGS = - 4.5 V, ID = - 150 mA VGS = 2.5 V, ID = 175 mA Drain-Source On-State Resistancea RDS(on) VGS = - 2.5 V, ID = 125 mA VGS = 1.8 V, ID = 150 mA VGS = - 1.8 V, ID = - 100 mA VDS = 1.5 V, ID = 40 mA VDS = - 1.5 V, ID = - 30 mA Forward Transconductancea Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 150 mA N-Channel VDD = 10 V, RL = 47  ID  250 mA, VGEN = 4.5 V, Rg = 10  P-Channel VDD = - 10 V, RL = 65  ID  - 150 mA, VGEN = - 4.5 V, Rg = 10  N-Ch N-Channel VDS = 10 V, VGS = 4.5 V, ID = 150 mA P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 750 1500 75 150 225 450 75 80 ns 75 90 Turn-Off Time tOFF pC gfs VSD VDS = 10 V, ID = 200 mA VDS = - 10 V, ID = - 150 mA IS = 150 mA, VGS = 0 V IS = - 150 mA, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.5 0.4 1.2 - 1.2 250 - 200 5 8 7 12 9 15 10 20 S V  0.40 - 0.40 ± 0.5 ± 0.5 ± 1.5 ± 1.0 1 -1 ± 1.0 ± 1.0 ± 3.0 ± 3.0 500 - 500 10 - 10 nA µA mA µA V Symbol Test Conditions Min. Typ. Max. Unit Turn-On Time tON Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71426 S10-2544-Rev. C, 08-Nov-10 Si1035X Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 0.5 VGS = 5 V thru 1.8 V 0.4 I D - Drain Current (mA) I D - Drain Current (A) 600 TJ = - 55 °C 500 25 °C 400 125 °C 300 0.3 0.2 200 0.1 1V 0.0 0 1 2 3 4 5 6 100 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 40 100 Transfer Characteristics VGS = 0 V f = 1 MHz R DS(on) - On-Resistance (Ω) 80 C - Capacitance (pF) 30 Ciss 60 20 40 Coss VGS = 1.8 V 10 VGS = 2.5 V VGS = 4.5 V 0 0 50 100 150 200 250 20 0 0 Crss 4 8 12 16 20 ID - Drain Current (mA) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 5 VDS = 10 V ID = 150 mA 4 R DS(on) - On-Resistance 1.4 1.6 Capacitance VGS - Gate-to-Source Voltage (V) VGS = 4.5 V ID = 200 mA (Normalized) 1.2 VGS = 1.8 V ID = 175 mA 3 2 1.0 1 0.8 0 0.0 0.2 0.4 0.6 0.8 0.6 - 50 - 25 0 25 50 75 100 125 Q g - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 71426 S10-2544-Rev. C, 08-Nov-10 www.vishay.com 3 Si1035X Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1000 TJ = 125 °C R DS(on) - On-Resistance (Ω) 40 I S - Source Current (mA) 50 ID = 200 mA 100 TJ = 25 °C 30 ID = 175 mA 10 TJ = 50 °C 20 10 1 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 6 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.3 3.0 On-Resistance vs. Gate-to-Source Voltage 0.2 VGS(th) Variance (V) ID = 0.25 mA 0.1 IGSS - (µA) 2.5 2.0 0.0 1.5 - 0.1 1.0 VGS = 2.8 V - 0.2 0.5 - 0.3 - 50 - 25 0 25 50 75 100 125 0.0 - 50 - 25 0 25 50 75 100 125 TJ - Temperature (°C) TJ - Temperature (°C) Threshold Voltage Variance vs. Temperature BV GSS - Gate-to-Source Breakdown Voltage (V) 7 6 5 4 3 2 1 0 - 50 IGSS vs. Temperature - 25 0 25 50 75 100 125 TJ - Temperature (°C) BVGSS vs. Temperature www.vishay.com 4 Document Number: 71426 S10-2544-Rev. C, 08-Nov-10 Si1035X Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 0.5 VGS = 5 V thru 2.5 V 0.4 ID - Drain Current (A) 1.8 V 0.3 I D - Drain Current (mA) 2V 400 500 TJ = - 55 °C 25 °C 125 °C 300 0.2 200 0.1 100 0.0 0 1 2 3 4 5 6 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 25 VGS = 1.8 V R DS(on) - On-Resistance (Ω) 20 C - Capacitance (pF) 120 Transfer Characteristics 100 VGS = 0 V f = 1 MHz 80 Ciss 15 VGS = 2.5 V 10 VGS = 4.5 V 5 60 40 Coss 20 Crss 0 4 8 12 16 20 0 0 200 400 600 800 1000 0 I D - Drain Current (mA) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 5 VDS = 10 V ID = 150 mA 4 R DS(on) - On-Resistance 1.4 1.6 Capacitance VGS - Gate-to-Source Voltage (V) VGS = 4.5 V ID = 150 mA (Normalized) 1.2 3 2 1.0 VGS = 1.8 V ID = 125 mA 1 0.8 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.6 - 50 - 25 0 25 50 75 100 125 Q g - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 71426 S10-2544-Rev. C, 08-Nov-10 www.vishay.com 5 Si1035X Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1000 TJ = 125 °C RDS(on) - On-Resistance (Ω) 40 ID = 150 mA 30 I S - Source Current (mA) 50 100 TJ = 25 °C TJ = - 55 °C 10 20 10 ID = 125 mA 1 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 6 VSD - S o ur c e-to-Drain Voltage (V) V GS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.3 3.0 On-Resistance vs. Gate-to-Source Voltage 0.2 VGS(th) Variance (V) ID = 0.25 mA 0.1 IGSS - (µA) 2.5 2.0 VGS = 2.8 V 0.0 1.5 - 0.1 1.0 - 0.2 0.5 - 0.3 - 50 - 25 0 25 50 75 100 125 0.0 - 50 - 25 0 25 50 75 100 125 TJ - Temperature (°C) TJ - Temperature (°C) Threshold Voltage Variance vs. Temperature BVGSS - Gate-to-Source Breakdown Voltage (V) 0 -1 -2 -3 -4 -5 -6 -7 - 50 IGSS vs. Temperature - 25 0 25 50 75 100 125 TJ - Temperature (°C) BVGSS vs. Temperature www.vishay.com 6 Document Number: 71426 S10-2544-Rev. C, 08-Nov-10 Si1035X Vishay Siliconix N- OR P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 500 °C/W t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 1 Square Wave Pulse Duration (s) 10-1 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71426. Document Number: 71426 S10-2544-Rev. C, 08-Nov-10 www.vishay.com 7 Package Information Vishay Siliconix SC89: 6 LEADS (SOT 563F) 2 3 D E1/2 4 aaa C e1 A 2X 4 D B E/2 E 2 3 E1 2X aaa C 5 1 2 3 2X bbb C e B 4 6X b ccc M C A–B D A1 L1 L A A1 SEE DETAIL “A” MILLIMETERS Dim A A1 b c D E E1 e e1 L L1 Min 0.56 0.00 0.15 0.10 1.50 1.55 Max 0.60 0.10 0.30 0.18 1.70 1.70 NOTES: 1. 2. 2 Dimensions in millimeters. Dimension D does not include mold flash, protrusions or gate burrs. Mold flush, protrusions or gate burrs shall not exceed 0.15 mm per dimension E1 does not include interlead flash or protrusion, interlead flash or protrusion shall not exceed 0.15 mm per side. Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and the bottom of the plastic body. Datums A, B and D to be determined 0.10 mm from the lead tip. Terminal numbers are shown for reference only. These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. 3. 3 1.20 BSC 0.50 BSC 1.00 BSC 0.35 BSC 0.20 BSC 4 4. 5. 5 6. 6 ECN: E-00499—Rev. B, 02-Jul-01 DWG: 5880 Document Number: 71612 25-Jun-01 ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ DETAIL “A” ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ 6 5 4 SECTION B-B C 6 ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ Note Symbol aaa bbb ccc Tolerances Of Form And Position 0.10 0.10 0.10 2, 3 2, 3 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead 0.051 (1.300) (1.753) 0.012 (0.300) 0.051 (0.201) 0.020 (0.500) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index (0.798) 0.069 0.031 (0.478) 0.019 APPLICATION NOTE Document Number: 72605 Revision: 21-Jan-08 www.vishay.com 21 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1