Si1302DL
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30 0.700 @ VGS = 4.5 V 0.53
rDS(on) (W)
0.480 @ VGS = 10 V
ID (A)
0.64
SOT-323 SC-70 (3-LEADS)
G 1 Marking Code KA XX YY Lot Traceability and Date Code Part # Code Top View 3 D
S
2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C
Symbol
VDS VGS
5 secs
30
Steady State
Unit
V
"20 0.64 0.60 0.48 1.5 0.26 0.31 0.20 –55 to 150 0.23 0.28 0.18
ID 0.51 IDM IS A
W _C
THERMAL RESISTANCE RATINGS
Parameter
t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71249 S-02367—Rev. C, 23-Oct-00 www.vishay.com Steady State Steady State RthJA RthJF
Symbol
Typical
355 380 285
Maximum
400 450 340
Unit
_C/W
1
Si1302DL
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 70_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 0.6 A VGS = 4.5 V, ID = 0.2 A VDS = 15 V, ID = 0.6 A IS = 0.23 A, VGS = 0 V 1.5 0.410 0.600 0.75 0.8 1.2 0.480 0.700 1 "100 1 5 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 0.23 A, di/dt = 100 A/ms VDD = 15 V, RL = 30 W ID ^ 0.5 A, VGEN = 10 V, RG = 6 W VDS = 15 V, VGS = 10 V, ID = 0.6 A 0.86 0.24 0.08 5 8 8 7 15 10 15 15 15 30 ns 1.4 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
1.0 1.0
Transfer Characteristics
0.8 I D – Drain Current (A)
VGS = 10 thru 4 V I D – Drain Current (A)
0.8
0.6
0.6
0.4 3V 0.2
0.4 TC = 125_C 0.2
25_C –55_C
0.0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
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2
Document Number: 71249 S-02367—Rev. C, 23-Oct-00
Si1302DL
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
1.6 r DS(on) – On-Resistance ( W ) 1.4 1.2 1.0 0.8 0.6 VGS = 10 V 0.4 0.2 0.0 0.0 10 VGS = 4.5 V C – Capacitance (pF) 60 Ciss
Vishay Siliconix
Capacitance
50
40
30 Coss Crss
20
0 0.2 0.4 0.6 0.8 1.0 0 4 8 12 16 20
ID – Drain Current (A)
VDS – Drain-to-Source Voltage (V)
Gate Charge
10 V GS – Gate-to-Source Voltage (V) VDS = 15 V ID = 0.6 A 8 1.8
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 0.6 A
r DS(on) – On-Resistance ( W) (Normalized) 0.4 0.6 0.8 1.0
1.6
1.4
6
1.2
4
1.0
2
0.8
0 0.0
0.2
0.6 –50
–25
0
25
50
75
100
125
150
Qg – Total Gate Charge (nC)
TJ – Junction Temperature (_C)
Source-Drain Diode Forward Voltage
1 1.8
On-Resistance vs. Gate-to-Source Voltage
r DS(on) – On-Resistance ( W )
1.5
I S – Source Current (A)
1.2 ID = 0.6 A 0.9
TJ = 150_C
0.6
TJ = 25_C
0.3
0.1 0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)
Document Number: 71249 S-02367—Rev. C, 23-Oct-00
www.vishay.com
3
Si1302DL
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4 5
Single Pulse Power
0.2 V GS(th) Variance (V) ID = 250 mA –0.0 Power (W)
4
3 TA = 25_C 2
–0.2
–0.4
1
–0.6 –50
–25
0
25
50
75
100
125
150
0 10–2
10–1
1 Time (sec)
10
100
600
TJ – Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2
Notes:
0.1 0.1 0.05 0.02
t1 t2 1. Duty Cycle, D = t1 t2 PDM
2. Per Unit Base = RthJA = 360_C/W
Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec)
3. TJM – TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10
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4
Document Number: 71249 S-02367—Rev. C, 23-Oct-00
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