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SI1302DL_08

SI1302DL_08

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    SI1302DL_08 - N-Channel 30-V (D-S) MOSFET - Vishay Siliconix

  • 数据手册
  • 价格&库存
SI1302DL_08 数据手册
Si1302DL New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 0.700 @ VGS = 4.5 V 0.53 rDS(on) (W) 0.480 @ VGS = 10 V ID (A) 0.64 SOT-323 SC-70 (3-LEADS) G 1 Marking Code KA XX YY Lot Traceability and Date Code Part # Code Top View 3 D S 2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C Symbol VDS VGS 5 secs 30 Steady State Unit V "20 0.64 0.60 0.48 1.5 0.26 0.31 0.20 –55 to 150 0.23 0.28 0.18 ID 0.51 IDM IS A W _C THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71249 S-02367—Rev. C, 23-Oct-00 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 355 380 285 Maximum 400 450 340 Unit _C/W 1 Si1302DL Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 70_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 0.6 A VGS = 4.5 V, ID = 0.2 A VDS = 15 V, ID = 0.6 A IS = 0.23 A, VGS = 0 V 1.5 0.410 0.600 0.75 0.8 1.2 0.480 0.700 1 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 0.23 A, di/dt = 100 A/ms VDD = 15 V, RL = 30 W ID ^ 0.5 A, VGEN = 10 V, RG = 6 W VDS = 15 V, VGS = 10 V, ID = 0.6 A 0.86 0.24 0.08 5 8 8 7 15 10 15 15 15 30 ns 1.4 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 1.0 1.0 Transfer Characteristics 0.8 I D – Drain Current (A) VGS = 10 thru 4 V I D – Drain Current (A) 0.8 0.6 0.6 0.4 3V 0.2 0.4 TC = 125_C 0.2 25_C –55_C 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71249 S-02367—Rev. C, 23-Oct-00 Si1302DL New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 1.6 r DS(on) – On-Resistance ( W ) 1.4 1.2 1.0 0.8 0.6 VGS = 10 V 0.4 0.2 0.0 0.0 10 VGS = 4.5 V C – Capacitance (pF) 60 Ciss Vishay Siliconix Capacitance 50 40 30 Coss Crss 20 0 0.2 0.4 0.6 0.8 1.0 0 4 8 12 16 20 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 10 V GS – Gate-to-Source Voltage (V) VDS = 15 V ID = 0.6 A 8 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 0.6 A r DS(on) – On-Resistance ( W) (Normalized) 0.4 0.6 0.8 1.0 1.6 1.4 6 1.2 4 1.0 2 0.8 0 0.0 0.2 0.6 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage 1 1.8 On-Resistance vs. Gate-to-Source Voltage r DS(on) – On-Resistance ( W ) 1.5 I S – Source Current (A) 1.2 ID = 0.6 A 0.9 TJ = 150_C 0.6 TJ = 25_C 0.3 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Document Number: 71249 S-02367—Rev. C, 23-Oct-00 www.vishay.com 3 Si1302DL Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 5 Single Pulse Power 0.2 V GS(th) Variance (V) ID = 250 mA –0.0 Power (W) 4 3 TA = 25_C 2 –0.2 –0.4 1 –0.6 –50 –25 0 25 50 75 100 125 150 0 10–2 10–1 1 Time (sec) 10 100 600 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA = 360_C/W Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71249 S-02367—Rev. C, 23-Oct-00 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
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