SI1302DL_10

Si1302DL Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.480 at VGS = 10 V 0.700 at VGS = 4.5 V ID (A) 0.64 0.53 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC SC-70 (3-LEADS) G 1 Marking Code 3 D KA XX YY Lot Traceability and Date Code Part # Code S 2 Top View Ordering Information: Si1302DL-T1-E3 (Lead (Pb)-free) Si1302DL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5s Steady State 30 ± 20 0.60 0.48 1.5 0.23 0.28 0.18 - 55 to 150 Unit V 0.64 0.51 0.26 0.31 0.20 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface mounted on 1" x 1" FR4 board. t 5 s Steady State Steady State Symbol RthJA RthJF Typical 355 380 285 Maximum 400 450 340 Unit °C/W Document Number: 71249 S10-2140-Rev. F, 20-Sep-10 www.vishay.com 1 Si1302DL Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 0.23 A, dI/dt = 100 A/µs VDD = 15 V, RL = 30  ID  0.5 A, VGEN = 10 V, Rg = 6  VDS = 15 V, VGS = 10 V, ID = 0.6 A 0.86 0.24 0.08 5 8 8 7 15 10 15 15 15 30 ns 1.4 nC Voltagea VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 70 °C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 0.6 A VGS = 4.5 V, ID = 0.2 A VGS = 15 V, ID = 0.6 A IS = 0.23 A, VGS = 0 V 1.5 0.410 0.600 0.75 0.8 1.2 0.480 0.700 1 3 ± 100 1 5 V nA µA A  S V Symbol Test Conditions Min. Typ Max. Unit Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.0 1.0 0.8 VGS = 10 V thru 4 V 0.8 I D - Drain Current (A) 0.6 I D - Drain Current (A) 0.6 0.4 3V 0.2 0.4 TC = 125 °C 0.2 25 °C - 55 °C 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics www.vishay.com 2 Document Number: 71249 S10-2140-Rev. F, 20-Sep-10 Si1302DL Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.6 1.4 50 60 Ciss R DS(on) - On-Resistance (Ω) 1.2 C - Capacitance (pF) 1.0 0.8 0.6 VGS = 10 V 0.4 0.2 0.0 0.0 VGS = 4.5 V 40 30 Coss Crss 20 10 0 0.2 0.4 0.6 0.8 1.0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 VDS = 15 V ID = 0.6 A 8 1.8 VGS = 10 V ID = 0.6 A Capacitance VGS - Gate-to-Source Voltage (V) 1.6 R DS(on) - On-Resistance 1.4 6 (Normalized) 1.2 4 1.0 2 0.8 0 0.0 0.2 0.4 0.6 0.8 1.0 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge 1 1.8 On-Resistance vs. Junction Temperature R DS(on) - On-Resistance (Ω) 1.5 I S - Source Current (A) 1.2 ID = 0.6 A 0.9 TJ = 150 °C 0.6 TJ = 25 °C 0.3 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 71249 S10-2140-Rev. F, 20-Sep-10 www.vishay.com 3 Si1302DL Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.4 5 0.2 ID = 250 µA 4 VGS(th) Variance (V) Power (W) 0.0 3 TA = 25 °C 2 - 0.2 - 0.4 1 - 0.6 - 50 0 - 25 0 25 50 75 100 125 150 10-2 10-1 1 10 100 600 TJ - Temperature (°C) Time (s) Threshold Voltage 2 1 Duty Cycle = 0.5 Single Pulse Power Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 PDM t1 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 360 °C/W t1 t2 Single Pulse 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71249. www.vishay.com 4 Document Number: 71249 S10-2140-Rev. F, 20-Sep-10 Package Information Vishay Siliconix SC 70: 3 LEADS MILLIMETERS 3 E1 E 1 2 INCHES Min 0.035 – 0.031 0.010 0.004 0.071 0.071 0.045 e e1 D b c A2 A L 0.08 c A1 Dim A A1 A2 b c D E E1 e e1 L Min 0.90 – 0.80 0.25 0.10 1.80 1.80 1.15 Nom – – – – – 2.00 2.10 1.25 0.65BSC Max 1.10 0.10 1.00 0.40 0.25 2.20 2.40 1.35 Nom – – – – – 0.079 0.083 0.049 0.026BSC Max 0.043 0.004 0.039 0.016 0.010 0.087 0.094 0.053 1.20 0.10 1.30 0.20 7_Nom 1.40 0.30 0.047 0.004 0.051 0.008 7_Nom 0.055 0.012 ECN: S-03946—Rev. C, 09-Jul-01 DWG: 5549 Document Number: 71153 06-Jul-01 www.vishay.com 1 AN813 Vishay Siliconix Single-Channel LITTLE FOOTR SC-70 3-Pin and 6-Pin MOSFET Recommended Pad Pattern and Thermal Peformance INTRODUCTION This technical note discusses pin-outs, package outlines, pad patterns, evaluation board layout, and thermal performance for single-channel LITTLE FOOT power MOSFETs in the SC-70 package. These new Vishay Siliconix devices are intended for small-signal applications where a miniaturized package is needed and low levels of current (around 350 mA) need to be switched, either directly or by using a level shift configuration. Vishay provides these single devices with a range of on-resistance specifications and in both traditional 3-pin and new 6-pin versions. The new 6-pin SC-70 package enables improved on-resistance values and enhanced thermal performance compared to the 3-pin package. BASIC PAD PATTERNS See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/doc?72286) for the basic pad layout and dimensions for the 3-pin SC-70 and the 6-pin SC-70. These pad patterns are sufficient for the low-power applications for which this package is intended. Increasing the pad pattern has little effect on thermal resistance for the 3-pin device, reducing it by only 10% to 15%. But for the 6-pin device, increasing the pad patterns yields a reduction in thermal resistance on the order of 35% when using a 1-inch square with full copper on both sides of the printed circuit board (PCB). The availability of four drain leads rather than the traditional single drain lead allows a better thermal path from the package to the PCB and external environment. PIN-OUT Figure 1 shows the pin-out description and Pin 1 identification for the single-channel SC-70 device in both 3-pin and 6-pin configurations. The pin-out of the 6-pin device allows the use of four pins as drain leads, which helps to reduce on-resistance and junction-to-ambient thermal resistance. SOT-323 SC-70 (3-LEADS) Top View G 1 3 D 1 EVALUATION BOARDS FOR THE SINGLE SC70-3 AND SC70-6 Figure 2 shows the 3-pin and 6-pin SC-70 evaluation boards (EVB). Both measure 0.6 inches by 0.5 inches. Their copper pad traces are the same as described in the previous section, Basic Pad Patterns. Both boards allow interrogation from the outer pins to 6-pin DIP connections, permitting test sockets to be used in evaluation testing. The thermal performance of the single SC-70 has been measured on the EVB for both the 3-pin and 6-pin devices, the results shown in Figures 3 and 4. The minimum recommended footprint on the evaluation board was compared with the industry standard of 1-inch square FR4 PCB with copper on both sides of the board. SOT-363 SC-70 (6-LEADS) Top View 6 5 D D 2 S 2 G 3 4 FIGURE 1. For package dimensions see outline drawings: SC-70 (3-Leads) (http://www.vishay.com/doc?71153) SC-70 (6-Leads) (http://www.vishay.com/doc?71154) Front of Board SC70-3 Back of Board, SC70-3 and SC70-6 Front of Board SC70-6 ChipFETr ChipFETr vishay.com FIGURE 2. Document Number: 71236 12-Dec-03 www.vishay.com 1 AN813 Vishay Siliconix THERMAL PERFORMANCE Junction-to-Foot Thermal Resistance (the Package Performance) Thermal performance for the 3-pin SC-70 measured as junction-to-foot thermal resistance is 285_C/W typical, 340_C/W maximum. Junction-to-foot thermal resistance for the 6-pin SC70-6 is 105_C/W typical, 130_C/W maximum — a nearly two-thirds reduction compared with the 3-pin device. The “foot” is the drain lead of the device as it connects with the body. This improved performance is obtained by the increase in drain leads from one to four on the 6-pin SC-70. Note that these numbers are somewhat higher than other LITTLE FOOT devices due to the limited thermal performance of the Alloy 42 lead-frame compared with a standard copper lead-frame. SC-70 (6-PIN) Room Ambient 25 _C PD + TJ(max) * TA Rq JA Elevated Ambient 60 _C PD + TJ(max) * TA Rq JA o* o PD + 150 Co 25 C 180 C W o* o PD + 150 Co 60 C 180 C W PD + 694 mW PD + 500 mW NOTE: Although they are intended for low-power applications, devices in the 6-pin SC-70 will handle power dissipation in excess of 0.5 W. Testing To aid comparison further, Figures 3 and 4 illustrate single-channel SC-70 thermal performance on two different board sizes and two different pad patterns. The results display the thermal performance out to steady state and produce a graphic account of the thermal performance variation between the two packages. The measured steady state values of RθJA for the single 3-pin and 6-pin SC-70 are as follows: Junction-to-Ambient Thermal Resistance (dependent on PCB size) The typical RθJAfor the single 3-pin SC-70 is 360_C/W steady state, compared with 180_C/W for the 6-pin SC-70. Maximum ratings are 430_C/W for the 3-pin device versus 220_C/W for the 6-pin device. All figures are based on the 1-inch square FR4 test board.The following table shows how the thermal resistance impacts power dissipation for the two different pin-outs at two different ambient temperatures. LITTLE FOOT SC-70 3-Pin 6-Pin 329.7_C/W 211.8_C/W 1) Minimum recommended pad pattern (see Figure 4) on the EVB. 410.31_C/W 360_C/W SC-70 (3-PIN) Room Ambient 25 _C PD + TJ(max) * TA Rq JA Elevated Ambient 60 _C PD + TJ(max) * TA Rq JA 2) Industry standard 1” square PCB with maximum copper both sides. o* o PD + 150 Co 25 C 360 C W o* o PD + 150 Co 60 C 360 C W PD + 347 mW PD + 250 mW The results show that designers can reduce thermal resistance RθJA on the order of 20% simply by using the 6-pin device rather than the 3-pin device. In this example, a 80_C/W reduction was achieved without an increase in board area. If increasing board size is an option, a further 118_C/W reduction could be obtained by utilizing a 1-inch square PCB area. 400 400 320 Thermal Resistance (C/W) 3-pin 240 6-pin 160 Thermal Resistance (C/W) 320 3-pin 240 6-pin 160 80 0.5 in x 0.6 in EVB 0 10-5 10-4 10-3 10-2 10-1 1 10 100 1000 Time (Secs) 80 1” Square FR4 PCB 0 10-5 10-4 10-3 10-2 10-1 1 10 100 1000 Time (Secs) FIGURE 3. Comparison of SC70-3 and SC70-6 on EVB FIGURE 4. Comparison of SC70-3 and SC70-6 on 1” Square FR4 PCB Document Number: 71236 12-Dec-03 www.vishay.com 2 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 3-Lead 0.025 (0.622) 0.022 (0.559) (2.438) 0.096 0.027 (0.686) 0.071 (1.803) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index (0.648) 0.026 (1.143) 0.045 APPLICATION NOTE Document Number: 72601 Revision: 21-Jan-08 www.vishay.com 17 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1