SI1303DL

Si1303DL Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.430 @ VGS = - 4.5 V - 20 0.480 @ VGS = - 3.6 V 0.700 @ VGS = - 2.5 V ID (A) - 0.72 - 0.68 - 0.56 SOT-323 SC-70 (3-LEADS) G 1 Marking Code 3 D LA XX YY Lot Traceability and Date Code S 2 Part # Code Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID - 0.58 IDM IS - 0.28 0.34 0.22 - 55 to 150 - 2.5 - 0.24 0.29 0.19 W _C - 0.54 A Symbol VDS VGS 5 secs Steady State - 20 "12 Unit V - 0.72 - 0.67 THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71075 S-03721—Rev. C, 07-Apr-03 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 315 360 285 Maximum 375 430 340 Unit _C/W 1 Si1303DL Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "12 V VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ = 70_C VDS = - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 1 A Drain-Source On-State Resistancea rDS(on) VGS = - 3.6 V, ID = - 0.7 A VGS = - 2.5 V, ID = - 0.3 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = - 10 V, ID = - 1 A IS = - 0.3 A, VGS = 0 V - 2.5 0.360 0.400 0.560 1.7 - 1.2 0.430 0.480 0.700 S V W - 0.6 "100 -1 -5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = - 1 A, di/dt = 100 A/ms VDD = - 10 V, RL = 10 W V, ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W VDS = - 10 V, VGS = - 4.5 V, ID = - 1 A 1.7 0.38 0.63 9 31 12.5 14 35 15 45 20 20 55 ns 2.2 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 6 VGS = 4.5 V 5 I D - Drain Current (A) 4V 3.5 V 5 I D - Drain Current (A) 6 Transfer Characteristics TC = - 55_C 25_C 4 4 3 3V 3 125_C 2 2.5 V 2V 2 1 1, 1.5 V 0 0 2 4 6 8 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71075 S-03721—Rev. C, 07-Apr-03 www.vishay.com 2 Si1303DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 2.0 r DS(on) - On-Resistance ( W ) 250 Capacitance VGS = 2.5 V 1.2 C - Capacitance (pF) 1.6 200 Ciss 150 0.8 VGS = 3.6 V 0.4 VGS = 4.5 V 100 Coss 50 Crss 0.0 0 1 2 3 4 5 6 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 12 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 1 A 9 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 1 A 1.2 6 r DS(on) - On-Resistance (W ) (Normalized) 2 3 4 0.8 3 0.4 0 0 1 Qg - Total Gate Charge (nC) 0.0 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 2.5 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 1 r DS(on) - On-Resistance ( W ) TJ = 150_C 2.0 1.5 ID = 1 A 0.1 TJ = 25_C 0.01 1.0 0.5 0.001 0.0 0.0 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 6 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71075 S-03721—Rev. C, 07-Apr-03 www.vishay.com 3 Si1303DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 20 Single Pulse Power 0.3 V GS(th) Variance (V) ID = 250 mA 0.2 Power (W) 16 12 TA = 25_C 8 0.1 0.0 4 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 150 0 10 -3 10 -2 10 -1 1 10 100 600 TJ - Temperature (_C) Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA = 360_C/W Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71075 S-03721—Rev. C, 07-Apr-03