SI1304BDL_10

Si1304BDL Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.270 at VGS = 4.5 V 0.385 at VGS = 2.5 V ID (A)a 0.90 0.75 Qg (Typ.) 1.1 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC SC-70 (3-LEADS) G 1 Marking Code KF XX YY 3 D D S 2 Lot Traceability and Date Code Part # Code Top View G S Ordering Information: Si1304BDL-T1-E3 (Lead (Pb)-free) Si1304BDL-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit 30 ± 12 0.90 0.71 0.85b, c 0.68b, c 4 0.31 0.28b, c 0.37 0.24 0.34b, c 0.22b, c - 55 to 150 °C W A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d t≤5s Steady State Maximum Junction-to-Foot (Drain) Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 360 °C/W. Document Number: 73480 S10-0645-Rev. C, 22-Mar-10 www.vishay.com 1 Symbol RthJA RthJF Typical 315 285 Maximum 375 340 Unit °C/W Si1304BDL Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = 0.28 A, dI/dt = 100 A/µs, TJ = 25 °C IS = 0.28 A 0.8 50 105 34 16 TC = 25 °C 0.31 4 1.2 75 160 A V ns nC ns Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 15 V, RL = 22 Ω ID ≅ 0.68 A, VGEN = 4.5 V, Rg = 1 Ω f = 1 MHz VDS = 15 V, VGS = 4.5 V, ID = 0.9 VDS = 15 V, VGS = 2.5 V, ID = 0.9 VDS = 15 V, VGS = 0 V, f = 1 MHz 100 30 20 1.8 1.1 0.4 0.6 1.5 10 30 5 10 2.3 15 45 25 15 ns Ω 2.7 1.7 nC pF VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 12 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 70 °C VDS ≥ 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 0.9 VGS = 2.5 V, ID = 0.75 VDS = 15 V, ID = 0.9 4 0.216 0.308 2 0.270 0.385 0.6 30 27.3 3 1.3 ± 100 1 5 V mV/°C V nA µA A Ω S Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73480 S10-0645-Rev. C, 22-Mar-10 Si1304BDL Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4 VGS = 5 V thru 3 V I D - Drain Current (A) 2.0 3 VGS = 2.5 V 2 I D - Drain Current (A) 1.5 1.0 TA = - 55 °C 0.5 TA = 25 °C TA = 125 °C VGS = 2.0 V 1 VGS = 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.6 180 Transfer Characteristics Curves vs. Temperature R DS(on) - On-Resistance (Ω) 0.5 VGS = 2.5 V 0.4 C - Capacitance (pF) 150 120 Ciss 90 0.3 VGS = 4.5 V 0.2 60 Coss Crss 30 0.1 0 1 2 3 4 5 0 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-Source Voltage (V) On-Resistance vs. Drain Current 5 ID = 0.91 A VGS - Gate-to-Source Voltage (V) 4 R DS(on) - On-Resistance VDS = 15 V 3 VDS = 24 V 2 1.7 2.0 ID = 0.90 A Capacitance VGS = 4.5 V, ID = 0.9 A (Normalized) 1.4 1.1 VGS = 2.5 V, ID = 0.75 A 1 0.8 0 0.0 0.5 1.0 1.5 2.0 0.5 - 50 - 25 0 25 50 75 100 125 150 Qg - T otal Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge Document Number: 73480 S10-0645-Rev. C, 22-Mar-10 On-Resistance vs. Junction Temperature www.vishay.com 3 Si1304BDL Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 0.8 ID = 0.9 A R DS(on) - On-Resistance (Ω) 0.6 TA = 125 °C 0.4 I S - Source Current (A) TJ = 150 °C 1 TJ = 25 °C 0.1 0.2 TA = 25 °C 0.01 0.3 0 0.6 0.9 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Forward Diode Voltage vs. Temperature 1.4 1.3 16 1.2 VGS(th) Variance (V) ID = 250 µA Power (W) 1.1 1.0 0.9 0.8 4 0.7 0.6 - 50 0 10-3 12 20 RDS(on) vs. VGS vs. Temperature TA = 25 °C 8 - 25 0 25 50 75 100 125 150 10-2 10-1 1 Time (s) 10 100 600 TJ - Temperature (°C) Threshold Voltage 10 Limited by RDS(on)* 1 ms 1 I D - Drain Current (A) 10 ms 100 ms 0.1 1s 10 s 0.01 TA = 25 °C Single Pulse BVDSS Limited 0.001 0.1 DC Single Pulse Power, Junction-to-Ambient 1000 1 100 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 73480 S10-0645-Rev. C, 22-Mar-10 Si1304BDL Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.2 0.4 1.0 I D - Drain Current (A) Power Dissipation (W) 0.3 0.8 0.6 0.2 0.4 0.1 0.2 0.0 0 25 50 75 100 125 150 0.0 25 50 75 100 125 150 TC - Case Temperature (°C) T C - Case Temperature (°C) Current Derating* Power, Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73480 S10-0645-Rev. C, 22-Mar-10 www.vishay.com 5 Si1304BDL Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 360 °C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73480. www.vishay.com 6 Document Number: 73480 S10-0645-Rev. C, 22-Mar-10 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1