Si1305DL
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.280 @ VGS = - 4.5 V -8 0.380 @ VGS = - 2.5 V 0.530 @ VGS = - 1.8 V
ID (A)
- 0.92 - 0.79 - 0.67
SOT-323 SC-70 (3-LEADS)
G 1 Marking Code LB XX YY Lot Traceability and Date Code Part # Code Top View 3 D
S
2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID - 0.74 IDM IS - 0.28 0.34 0.22 - 55 to 150 -3 - 0.24 0.29 0.19 W _C - 0.69 A
Symbol
VDS VGS
5 secs
-8
Steady State
Unit
V
"8 - 0.92 - 0.86
THERMAL RESISTANCE RATINGS
Parameter
t v 5 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71076 S-03721—Rev. C, 07-Apr-03 www.vishay.com Steady State Steady State RthJA RthJF
Symbol
Typical
315 360 285
Maximum
375 430 340
Unit
_C/W
2-1
Si1305DL
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "8 V VDS = - 6.4 V, VGS = 0 V VDS = - 6.4 V, VGS = 0 V, TJ = 70_C VDS = - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 1 A Drain-Source On-State Resistancea rDS(on) VGS = - 2.5 V, ID = - 0.5 A VGS = - 1.8 V, ID = - 0.3 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = - 5 V, ID = - 1 A IS = - 0.3 A, VGS = 0 V -3 0.230 0.315 0.440 3.5 - 1.2 0.280 0.380 0.530 S V W - 0.45 "100 -1 -5 V nA mA A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = - 1 A, di/dt = 100 A/ms VDD = - 4 V, RL = 4 W V, ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W VDS = - 4 V, VGS = - 4.5 V, ID = - 1 A 2.6 0.6 0.5 8 55 17 12 27 15 80 25 20 45 ns 4 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
8 VGS = 4.5 V 4V 6 I D - Drain Current (A) I D - Drain Current (A) 3V 4 3.5 V 5 6
Transfer Characteristics
TC = - 55_C 25_C
4
2.5 V
125_C 3
2V 2 1.5 V 1V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
2
1
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V) Document Number: 71076 S-03721—Rev. C, 07-Apr-03
www.vishay.com
2-2
Si1305DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
1.4 r DS(on) - On-Resistance ( W ) 1.2 VGS = 2.5 V C - Capacitance (pF) VGS = 1.8 V 1.0 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 5 6 7 350 300 250 200 150 100 50 0 0 2 4 6 8 Crss Coss Ciss
Capacitance
VGS = 4.5 V
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Gate Charge
8 V GS - Gate-to-Source Voltage (V) VDS = 4 V ID = 1 A 6 1.6
On-Resistance vs. Junction Temperature
VGS = 4.5 V ID = 1 A 1.2
4
r DS(on) - On-Resistance (W ) (Normalized) 2 3 4
0.8
2
0.4
0 0 1 Qg - Total Gate Charge (nC)
0.0 - 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
10 1.0
On-Resistance vs. Gate-to-Source Voltage
I S - Source Current (A)
1
r DS(on) - On-Resistance ( W )
TJ = 150_C
0.8
0.6
ID = 1 A
0.1
0.4
TJ = 25_C 0.01
0.2
0.001 0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Document Number: 71076 S-03721—Rev. C, 07-Apr-03
www.vishay.com
2-3
Si1305DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4 20
Single Pulse Power
0.3 V GS(th) Variance (V) ID = 250 mA 0.2 Power (W)
16
12 TA = 25_C 8
0.1
0.0 4
- 0.1
- 0.2 - 50
- 25
0
25
50
75
100
125
150
0 10 -3
10 -2
10 -1
1
10
100
600
TJ - Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2
Notes:
0.1 0.1 0.05 0.02
t1 t2 1. Duty Cycle, D = t1 t2 PDM
2. Per Unit Base = RthJA = 360_C/W
Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec)
3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10
www.vishay.com
2-4
Document Number: 71076 S-03721—Rev. C, 07-Apr-03
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