Si1330EDL
Vishay Siliconix
N-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 60 RDS(on) (Ω) 2.5 at VGS = 10 V 3 at VGS = 4.5 V 8 at VGS = 3 V ID (A) 0.25 0.23 0.05
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • ESD Protected: 2000 V • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
SOT-323 SC-70 (3-LEADS)
G 1 Marking Code KD XX YY 3 D
• P-Channel Driver - Notebook PC - Servers
D
S
2
Lot Traceability and Date Code Part # Code Top View
G
Ordering Information: Si1330EDL-T1-E3 (Lead (Pb)-free) Si1330EDL-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg 0.26 0.31 0.20 - 55 to 150 0.25 0.2 1.0 0.23 0.28 0.18 W °C 5s 60 ± 20 0.24 0.19 A Steady State Unit V
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface mounted on 1" x 1" FR4 board. t≤5s Steady State Steady State Symbol RthJA RthJF Typical 355 380 285 Maximum 400 450 340 °C/W Unit
Document Number: 72861 S10-0721-Rev. B, 29-Mar-10
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Si1330EDL
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noteda
Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VDS VGS(th) IGSS IDSS VGS = 0 V, ID = 10 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 10 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 55 °C VGS = 10 V, VDS = 7.5 V On-State Drain Currentb ID(on) VGS = 4.5 V, VDS = 10 V VGS = 3 V, VDS = 10 V VGS = 10 V, ID = 0.25 A Drain-Source On-Resistanceb Forward Transconductanceb Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Time Turn-Off Time Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 30 V, RL = 150 Ω ID ≅ 0.2 A, VGEN = 10 V Rg = 10 Ω 0.4 VDS = 10 V, VGS = 4.5 V ID ≅ 0.25 A 0.11 0.15 173 3.8 4.8 12.8 9.6 10 15 20 15 ns Ω 0.6 nC RDS(on) gfs VSD VGS = 4.5 V, ID = 0.2 A VGS = 3 V, ID = 0.025 A VDS = 10 V, ID = 0.25 A IS = 0.23 A, VGS = 0 V 0.5 0.4 0.05 1.0 1.4 3.0 350 0.83 1.2 2.5 3 8 mS V Ω A 60 1 2.0 2.5 ±1 1 10 µA V Symbol Test Conditions Min. Typ. Max. Unit
Notes: a. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.0 6V VGS = 10 V, 7 V 0.8 I D - Drain Current (A) 5V I D - Drain Current (A) 0.8 125 °C 0.6 1.0 TJ = - 55 °C 25 °C
0.6
0.4
4V
0.4
0.2 3V 0.0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V)
0.2
0 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
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Document Number: 72861 S10-0721-Rev. B, 29-Mar-10
Si1330EDL
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 VGS = 4.5 V VGS = 10 V VGS - Gate-to-Source Voltage (V) R DS(on) - On-Resistance (Ω) 7 6 5 4 3 2 1 0 0.0 VDS = 10 V ID = 250 mA
0.2
0.4
0.6
0.8
1.0
0.1
0.2
0.3
0.4
0.5
0.6
I D - Drain Current (mA)
Qg - Total Gate Charge (nC)
On-Resistance vs. Drain Current
2.0 VGS = 10 V at 250 mA 1.6 R DS(on) - On-Resistance (Normalized) I S - Source Current (A) 100 TJ = 125 °C 1000 VGS = 0 V
Gate Charge
1.2
VGS = 4.5 V at 200 mA
0.8
10
TJ = 25 °C
0.4 TJ = - 55 °C 0.0 - 50 1 - 25 0 25 50 75 100 125 150 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V)
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
5 ID = 200 mA R DS(on) - On-Resistance (Ω) 4 VGS(th) Variance (V) 0.4
Source-Drain Diode Forward Voltage
0.2 ID = 250 µA 0.0
3
- 0.2
2
- 0.4
1
- 0.6
0 0 2 4 6 8 10
- 0.8 - 50
- 25
0
25
50
75
100
125
150
VGS - Gate-to-Source Voltage (V)
TJ - Temperature (°C)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage Variance over Temperature
Document Number: 72861 S10-0721-Rev. B, 29-Mar-10
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Si1330EDL
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
5 10 IDM Limited 4 1 3 TA = 25 °C 2 Limited by R DS(on)*
I D - Drain Current (A)
Power (W)
1 ms 0.1 ID(on) Limited 0.01 TA = 25 °C Single Pulse BVDSS Limited 10 ms 100 ms 1s 10 s, DC
1
0 10 -2
10 -1
1 Time (s)
10
100
600
0.001 0.1
Single Pulse Power
1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified
Safe Operating Area
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2
Notes:
0.1 0.1 0.05 0.02
PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 380 °C/W
Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s)
3. T JM - T A = PDMZthJA(t) 4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2 0.1 0.05 0.02
0.1
Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10
Normalized Thermal Transient Impedance, Junction-to-Foot
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Document Number: 72861 S10-0721-Rev. B, 29-Mar-10
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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