SI1405DL

Si1405DL New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.125 @ VGS = –4.5 V –8 8 0.160 @ VGS = –2.5 V 0.210 @ VGS = –1.8 V ID (A) "1.8 "1.6 "1.4 SOT-363 SC-70 (6-LEADS) D 1 6 D Marking Code D 2 5 D OB XX YY Lot Traceability and Date Code G 3 4 S Part # Code Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Drain Current C) Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C ID IDM IS PD TJ, Tstg –0.8 0.625 0.400 –55 to 150 Symbol VDS VGS 5 secs –8 Steady State Unit V "8 "1.8 "1.5 "5 –0.8 0.568 "1.6 "1.2 A W 0.295 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71073 S-01560—Rev. B, 17-Jul-00 www.vishay.com S FaxBack 408-970-5600 t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 165 180 105 Maximum 200 220 130 Unit _C/W 2-1 Si1405DL Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "8 V VDS = –6.4 V, VGS = 0 V VDS = –6.4 V, VGS = 0 V, TJ = 85_C VDS = –5 V, VGS = –4.5 V VGS = –4.5 V, ID = –1.8 A Drain-Source On-State Resistancea DiS OS Ri rDS(on) VGS = –2.5 V, ID = –1.6 A VGS = –1.8 V, ID = –0.8 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = –10 V, ID = –1.8 A IS = –0.8 A, VGS = 0 V –2 0.100 0.130 0.170 3.8 –0.76 –1.1 0.125 0.160 0.210 S V W –0.45 "100 –1 –5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = –0.8 A, di/dt = 100 A/ms VDD = –4 V, RL = 10 W V, 10 ID ^ –1 A, VGEN = –4 5 V RG = 6 W A 4.5 V, VDS = –4 V, VGS = –4 5 V ID = –1 8 A V 4.5 V, 1.8 5.5 0.9 0.9 8 36 33 30 20 12 55 50 45 40 ns 7.0 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 5 VGS = 5 thru 2 V 4 I D – Drain Current (A) I D – Drain Current (A) 3.2 4.0 Transfer Characteristics TC = –55_C 25_C 125_C 2.4 3 1.5 V 2 1.6 1 0.5 V 0 0 1 2 3 4 5 1V 0.8 0 0 0.6 1.2 1.8 2.4 VDS – Drain-to-Source Voltage (V) www.vishay.com S FaxBack 408-970-5600 VGS – Gate-to-Source Voltage (V) Document Number: 71073 S-01560—Rev. B, 17-Jul-00 2-2 Si1405DL New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.5 r DS(on) – On-Resistance ( W ) 1000 Vishay Siliconix Capacitance 0.3 VGS = 1.8 V C – Capacitance (pF) 0.4 800 Ciss 600 0.2 VGS = 2.5 V 400 Coss 200 Crss 0 0.1 VGS = 4.5 V 0 0 1 2 3 4 5 0 2 4 6 8 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 5 V GS – Gate-to-Source Voltage (V) VDS = 4 V ID = 1.8 A 4 1.4 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 1.8 A 1.2 3 r DS(on) – On-Resistance (W) (Normalized) 2 3 4 5 6 1.0 2 0.8 1 0 0 1 Qg – Total Gate Charge (nC) 0.6 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage 5 TJ = 150_C I S – Source Current (A) TJ = 25_C 1 0.5 On-Resistance vs. Gate-to-Source Voltage r DS(on) – On-Resistance ( W ) 0.4 ID = 1.8 A 0.3 ID = 0.8 A 0.2 0.1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD – Source-to-Drain Voltage (V) 0 0 1 2 3 4 5 VGS – Gate-to-Source Voltage (V) Document Number: 71073 S-01560—Rev. B, 17-Jul-00 www.vishay.com S FaxBack 408-970-5600 2-3 Si1405DL Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 10 Single Pulse Power, Junction-to-Ambient 0.3 V GS(th) Variance (V) ID = 250 mA 0.2 Power (W) 8 6 0.1 4 0.0 2 –0.1 –0.2 –50 –25 0 25 50 75 100 125 150 0 10–2 10–1 1 Time (sec) 10 30 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 180_C/W t1 t2 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 71073 S-01560—Rev. B, 17-Jul-00