SI1411DH

Si1411DH New Product Vishay Siliconix P-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) −150 FEATURES ID (A) −0.52 −0.51 rDS(on) (W) 2.6 @ VGS = −10 V 2.7 @ VGS = −6 V Qg (Typ) 4.2 4 2 nC D TrenchFETr Power MOSFETS D Small, Thermally Enhanced SC-70 Package D Ultra Low On-Resistance APPLICATIONS D Active Clamp Circuits in DC/DC Power Supplies Product Is Completely Pb-free SOT-363 SC-70 (6-LEADS) D 1 6 5 D Marking Code YY D 2 D BG XX G S G 3 4 S Lot Traceability and Date Code Part # Code D P-Channel MOSFET Top View Ordering Information: Si1411DH-T1—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Single Pulse Avalanche Current Single Pluse Avalanch Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0 1 mH 0.1 TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 5 secs Steady State −150 "20 Unit V −0.52 −0.38 −0.8 −1.3 −2.1 0.22 1.56 0.81 −55 to 150 −0.42 −0.3 A −0.83 mJ 1.0 0.52 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 73242 S-50461—Rev. B, 14-Mar-05 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 60 100 34 Maximum 80 125 45 Unit _C/W 1 Si1411DH Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = −100 mA VDS = 0 V, VGS = "20 V VDS = −150 V, VGS = 0 V VDS = −150 V, VGS = 0 V, TJ = 85_C VDS = −15 V, VGS = −10 V VGS = −10 V, ID = −0.5 A VGS = −6 V, ID = −0.5 A VDS = −10 V, ID = −0.5 A IS = −1.4 A, VGS = 0 V −0.8 2.05 2.14 1.5 −0.80 −1.1 2.6 2.7 −2.5 −4.5 "100 −1 −5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Reverse Recovery Time Body Diode Reverse Recovery Charge Qg Qgs Qgd Rg td(on) tr td(off) tf trr Qrr IF = −0 5 A di/dt = 100 A/ms 0.5 A, VDD = −75 V, RL = 75 W V, ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W f = 1.0 MHz VDS = −75 V, VGS = −10 V, ID = −0.5 A , , 4.2 0.9 1.3 8.5 4.5 11 9 11 36 65 7 17 14 17 55 100 nC ns W 6.3 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 0.8 0.7 0.6 I D − Drain Current (A) 0.5 0.4 0.3 0.2 0.1 0.0 0 2 4 6 8 VDS − Drain-to-Source Voltage (V) 4V 3V 10 I D − Drain Current (A) VGS = 10 thru 5 V 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 1 Transfer Characteristics TC = 125_C 25_C −55_C 2 3 4 5 VGS − Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 73242 S-50461—Rev. B, 14-Mar-05 Si1411DH New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 4.0 3.5 r DS(on) − On-Resistance ( W ) C − Capacitance (pF) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 30 60 90 120 150 VGS = 6 V VGS = 10 V 200 Ciss 150 Vishay Siliconix On-Resistance vs. Drain Current 250 Capacitance 100 50 Crss Coss ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 10 V GS − Gate-to-Source Voltage (V) VDS = 75 V ID = 0.5 A rDS(on) − On-Resiistance (Normalized) 2.5 On-Resistance vs. Junction Temperature VGS = 10 V ID = 0.5 A 8 2.0 6 1.5 4 1.0 2 0.5 0 0.0 0.6 1.2 1.8 2.4 3.0 3.6 4.2 0.0 −50 −25 0 25 50 75 100 125 150 Qg − Total Gate Charge (nC) TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 2 1 r DS(on) − On-Resistance ( W ) I S − Source Current (A) 6 5 4 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C TJ = 25_C 0.1 ID = 0.5 A 3 2 1 0 0.01 0 0.3 0.6 0.9 1.2 1.5 VSD − Source-to-Drain Voltage (V) Document Number: 73242 S-50461—Rev. B, 14-Mar-05 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si1411DH Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 1.3 1.0 V GS(th) Variance (V) 0.7 0.4 0.1 −0.2 −0.5 −50 7 Power (W) ID = 250 mA 35 Single Pulse Power, Junction-to-Ambient 28 TA = 25_C Single Pulse 21 14 −25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ − Temperature (_C) 1 * Limited by rDS(on) I D − Drain Current (A) 0.1 Safe Operating Area 10 ms 100 ms 1 ms 10 ms 100 ms 0.01 TA = 25_C Single Pulse 1 s, 10 s 100 s, dc 0.001 0.1 1 10 100 1000 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified 2 1 Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Ambient Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 100_C/W t1 t2 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 73242 S-50461—Rev. B, 14-Mar-05 Si1411DH New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Vishay Siliconix Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73242. Document Number: 73242 S-50461—Rev. B, 14-Mar-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1