SI1413DH

Si1413DH New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.115 @ VGS = –4.5 V –20 0.155 @ VGS = –2.5 V 0.220 @ VGS = –1.8 V ID (A) –2.9 –2.4 –2.0 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package APPLICATIONS D Load Switching D PA Switch D Level Switch SOT-363 SC-70 (6-LEADS) D 1 6 D D Marking Code YY BC XX G Lot Traceability and Date Code Part # Code S D 2 5 D G 3 4 S Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID –2.0 IDM IS –1.4 1.56 0.81 –55 to 150 –8 –0.9 1.0 0.52 W _C –1.6 A Symbol VDS VGS 5 secs Steady State –20 "8 Unit V –2.9 –2.3 THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71878 S-20952—Rev. A, 01-Jul-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 60 100 34 Maximum 80 125 45 Unit _C/W 1 Si1413DH Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = –100 mA VDS = 0 V, VGS = "8 V VDS = –16 V, VGS = 0 V VDS = –16 V, VGS = 0 V, TJ = 85_C VDS = –5 V, VGS = –4.5 V VGS = –4.5 V, ID = –2.9 A Drain-Source On-State Resistancea rDS(on) VGS = –2.5 V, ID = –2.4 A VGS = –1.8 V, ID = –1.0 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = –10 V, ID = –2.9 A IS = –1.4 A, VGS = 0 V –4 0.095 0.125 0.180 6 –0.80 –1.1 0.115 0.155 0.220 S V W –0.45 0.8 "100 –1 –5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = –10 V, RL = 10 W ID ^ –1 A, VGEN = –4.5 V, RG = 6 W VDS = –10 V, VGS = –4.5 V, ID = –2.9 A 6 1.2 1.2 13 32 34 42 20 50 50 65 ns 8.5 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 8 VGS = 5 thru 2.5 V 8 Transfer Characteristics TC = –55_C 6 I D – Drain Current (A) 25_C 125_C 4 6 I D – Drain Current (A) 2V 4 1.5 V 2 2 1V 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71878 S-20952—Rev. A, 01-Jul-02 Si1413DH New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.5 1000 Vishay Siliconix Capacitance r DS(on) – On-Resistance ( W ) 0.4 C – Capacitance (pF) 800 Ciss 600 0.3 VGS = 1.8 V 0.2 VGS = 2.5 V VGS = 4.5 V 400 0.1 200 Coss Crss 0 4 8 12 16 20 0.0 0.0 0 1.5 3.0 4.5 6.0 7.5 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 6 V GS – Gate-to-Source Voltage (V) VDS = 10 V ID = –2.9 A 1.6 On-Resistance vs. Junction Temperature 4 r DS(on) – On-Resistance (W ) (Normalized) 5 1.4 VGS = 4.5 V ID = –2.9 A 1.2 3 1.0 2 1 0.8 0 0.0 1.6 3.2 4.8 6.4 8.0 0.6 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 0.5 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C TJ = 25_C r DS(on) – On-Resistance ( W ) 0.4 I S – Source Current (A) 0.3 ID = –2.9 A 1 0.2 0.1 0.1 0 0.3 0.6 0.9 1.2 1.5 0.0 0 1 2 3 4 5 6 VSD – Source-to-Drain Voltage (V) Document Number: 71878 S-20952—Rev. A, 01-Jul-02 VGS – Gate-to-Source Voltage (V) www.vishay.com 3 Si1413DH Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 ID = 250 mA 35 Single Pulse Power, Junction-to-Ambient 0.3 V GS(th) Variance (V) 28 0.2 Power (W) 21 0.1 14 0.0 7 –0.1 –0.2 –50 –25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ – Temperature (_C) Safe Operating Area 10 Limited by rDS(on) 1 ms I D – Drain Current (A) 1 10 ms 100 ms 0.1 TC = 25_C Single Pulse 1s 10 s dc 0.01 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 100_C/W Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71878 S-20952—Rev. A, 01-Jul-02 Si1413DH New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71878 S-20952—Rev. A, 01-Jul-02 www.vishay.com 5