SI1501DL

Si1501DL Vishay Siliconix Complementary 20-V (D-S) Low-Threshold MOSFET PRODUCT SUMMARY Channel N-Channel Channel VDS (V) 20 rDS(on) (W) 2.0 @ VGS = 4.5 V 2.5 @ VGS = 2.5 V 3.8 @ VGS = −4.5 V 5.0 @ VGS = −2.5 V ID (mA) 250 150 −180 −100 P-Channel P Channel −20 SC-70 (6-Leads) S1 G1 D2 1 2 3 Top View 6 5 4 Marking Code YY Lot Traceability and Date Code Part # Code D1 G2 S2 RE XX SOT-363 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM PD TJ, Tstg N-Channel 20 "8 250 200 500 0.20 0.13 P-Channel −20 "8 −180 −140 −500 Unit V mA W _C −55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Symbol RthJA Limit 625 (Total) Unit _C/W Document Number: 71303 S-03840—Rev. B, 21-May-01 www.vishay.com S 1 Si1501DL Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Drain Source Breakdown Voltage Gate Threshold Voltage Gate-Body Gate Body Leakage V(BR)DSS VGS( h) GS(th) IGSS VGS = 0 V, ID = 10 mA VGS = 0 V, ID = −10 mA VDS = VGS, ID = 50 mA VDS = VGS, ID = −50 mA VDS = 0 V, VGS = "8 V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = −20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS = −20 V, VGS = 0 V, TJ = 55_C VDS w 2.5 V, VGS = 5.0 V On-State On State Drain Currenta ID( ) D(on) VDS v −2.5 V, VGS = −5.0 V VDS w 4.5 V, VGS = 8.0 V VDS v −4.5 V, VGS = −8.0 V VGS = 2.5 V, ID = 150 mA Drain-Source On-State Drain Source On State Resistancea rDS( ) DS(on) VGS = −2.5 V, ID = −75 mA VGS = 4.5 V, ID = 250 mA VGS = −4.5 V, ID = −180 mA Forward Transconductancea Diode Forward Voltagea gf fs VSD VDS = 2.5 V, ID = 50 mA VDS = −2.5 V, ID = − 50 mA IS = 50 mA, VGS = 0 V IS = −50 mA, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 120 −120 400 −400 1.6 4 1.2 2.6 150 200 0.7 −0.7 1.2 −1.2 2.5 5 2.0 3.8 mS V W mA 20 −20 0.4 −0.4 24 −24 0.9 −0.9 "2 "2 0.001 −0.001 1.5 −1.5 "100 "100 100 −100 1 −1 mA nA V Symbol Test Condition Min Typ Max Unit Dynamicb Total Total Gate Charge Gate-Source Gate Source Charge Gate-Drain Gate Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd d Ciiss Coss Crss N-Ch N-Channel VDS = 5 V, VGS = 4.5 V, ID = 100 mA P Channel P-Channel VDS = −5 V, VGS = −4.5 V ID = −100 mA V V, A P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch N-Channel VDS = 5 V, VGS = 0 V P Channel P-Channel VDS = −5 V VGS = 0 V V, P-Ch N-Ch P-Ch N-Ch P-Ch 300 300 25 25 100 100 15 15 11 11 5 5 pF 450 450 pC Switching Turn-On Turn On Time Rise Time Turn-Off Turn Off Delay Time Fall Time td( ) d(on) tr td( ff) d(off) tf N-Channel N Channel VDD = 3 V, RL = 100 W ID = 0.25 A, VGEN = 4.5 V, Rg = 10 W P Channel P-Channel VDD = −3 V RL = 100 W V, 100 ID = -0.25 A, VGEN = −4.5 V, Rg = 10 W .25 4. N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 7 7 25 25 19 19 9 9 12 12 35 35 30 30 15 15 ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com Document Number: 71303 S-03840—Rev. B, 21-May-01 2 Si1501DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 1.25 VGS = 3.5 thru 5 V 1.00 I D − Drain Current (A) 3V 0.75 2.5 V 0.50 2V 0.25 1.5 V 0.00 0 1 2 3 VDS − Drain-to-Source Voltage (V) 1V 4 I D − Drain Current (A) 0.6 0.8 TC = −55_C 25_C N-CHANNEL Transfer Characteristics 0.4 125_C 0.2 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS − Gate-to-Source Voltage (V) 7 6 r DS(on) − On-Resistance ( W ) On-Resistance vs. Drain Current 50 Capacitance 40 5 4 3 VGS = 2.5 V 2 1 0 0 1 2 ID − Drain Current (A) 3 4 VGS = 4.5 V 0 0 4 8 12 16 20 C − Capacitance (pF) 30 20 Coss 10 Crss Ciss VDS − Drain-to-Source Voltage (V) 10 V GS − Gate-to-Source Voltage (V) VDS = 6 V ID = 100 mA Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 100 m A 6 r DS(on) − On-Resistance (W ) (Normalized) 300 400 500 600 8 1.4 1.2 4 1.0 2 0.8 0 0 100 200 Qg − Total Gate Charge (pC) 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Document Number: 71303 S-03840—Rev. B, 21-May-01 www.vishay.com S 3 Si1501DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 3 1 I S − Source Current (A) TJ = 125_C r DS(on) − On-Resistance ( W ) 6 8 N-CHANNEL On-Resistance vs. Gate-to-Source Voltage 0.1 ID = 250 mA 4 TJ = 25_C 0.01 TJ = −55_C 2 0.001 0.00 0.3 0.6 0.9 1.2 VSD − Source-to-Drain Voltage (V) 0 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) Threshold Voltage 0.2 0.1 V GS(th) Variance (V) −0.0 −0.1 −0.2 −0.3 −0.4 −50 ID = 50 mA −25 0 25 50 75 100 125 150 TJ − Temperature (_C) www.vishay.com 4 Document Number: 71303 S-03840—Rev. B, 21-May-01 Si1501DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 1.2 1.0 4.5 V I D − Drain Current (A) 4V 3.5 V 3V 2.5 V 2V 0.0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 I D − Drain Current (A) 0.8 0.6 0.4 0.2 0.3 125_C 5V 0.5 TC = −55_C 0.4 25_C P-CHANNEL Transfer Characteristics 0.2 0.1 VGS − Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 8 45 Capacitance r DS(on) − On-Resistance ( W ) C − Capacitance (pF) 6 36 4 VGS = 2.5 V VGS = 4.5 V 27 Ciss 18 Coss 9 Crss 2 0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 3 6 9 12 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) 10 V GS − Gate-to-Source Voltage (V) VDS = 6 V ID = 80 mA Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 180 m A 6 r DS(on) − On-Resistance (W ) (Normalized) 200 300 400 500 600 8 1.4 1.2 4 1.0 2 0.8 0 0 100 Qg − Total Gate Charge (pC) 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Document Number: 71303 S-03840—Rev. B, 21-May-01 www.vishay.com S 5 Si1501DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 1 TJ = 150_C 0.1 r DS(on) − On-Resistance ( W ) I S − Source Current (A) 6 5 4 ID = 180 mA 3 2 1 0 1.0 P-CHANNEL On-Resistance vs. Gate-to-Source Voltage 0.01 TJ = 25_C 0.001 0.00 0.5 01 1.5 VSD − Source-to-Drain Voltage (V) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS − Gate-to-Source Voltage (V) Threshold Voltage 0.3 ID = 50 mA 0.2 V GS(th) Variance (V) 0.1 0.0 −0.1 −0.2 −50 −25 0 25 50 75 100 125 150 TJ − Temperature (_C) www.vishay.com 6 Document Number: 71303 S-03840—Rev. B, 21-May-01