Si1551DL
Vishay Siliconix
Complementary 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
N-Channel 20
rDS(on) (W)
1.9 @ VGS = 4.5 V 3.7 @ VGS = 2.7 V 4.2 @ VGS = 2.5 V 0.995 @ VGS = -4.5 V
ID (A)
0.30 0.22 0.21 -0.44 -0.34 -0.32
P-Channel
-20
1.600 @ VGS = -2.7 V 1.800 @ VGS = -2.5 V
SOT-363 SC-70 (6-LEADS)
S1 1 6 D1 Marking Code RD G1 2 5 G2 XX YY Lot Traceability and Date Code Part # Code
D2
3
4
S2
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID IDM IS 0.25 0.30 0.16
P-Channel 5 secs Steady State
-20 "12 V - 0.44 -0.31 -1.0 -0.41 -0.30 A -0.23 0.27 0.14 W _C
Symbol
VDS VGS
5 secs
Steady State
20
Unit
0.30 0.22 0.6
0.29 0.21
0.23 0.27 0.14 -55 to 150
-0.25 0.30 0.16
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71255 S-21374—Rev. B, 12-Aug-02 www.vishay.com Steady State Steady State RthJA RthJF
Symbol
Typical
360 400 300
Maximum
415 460 350
Unit
_C/W
1
Si1551DL
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "12 V VDS = 16 V, VGS = 0 V VDS = -16 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V, TJ = 85_C VDS = -16 V, VGS = 0 V, TJ = 85_C On-State Drain Currenta VDS w 5 V, VGS = 4.5 V ID(on) VDS p -5 V, VGS = -4.5 V VGS = 4.5 V, ID = 0.29 A VGS = -4.5 V, ID = -0.41 A Drain-Source On-State Resistancea VGS = 2.7 V, ID = 0.1 A rDS(on) VGS = -2.7 V, ID = -0.25 A VGS = 2.5 V, ID = 0.1 A VGS = -2.5 V, ID = -0.25 A Forward Transconductancea VDS = 10 V, ID = 0.29 A gfs VDS = -10 V, ID = -0.41 A IS = 0.23 A, VGS = 0 V VSD IS = -0.23 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.6 -1.0 1.55 0.850 2.8 1.23 3.0 1.4 0.3 0.8 0.8 -0.8 1.2 -1.2 V S 1.9 0.995 3.7 1.600 4.2 1.800 W A 0.6 V -0.6 "100 "100 1 -1 5 -5 mA nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate-Body Leakage
IGSS
Diode Forward Voltagea
Dynamicb
N-Ch Total Gate Charge Qg N-Channel VDS = 10 V, VGS = 4.5 V, ID = 0.29 A Gate-Source Charge Qgs P-Channel VDS = -10 V, VGS = -4.5 V, ID = -0.41 A P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Turn-On Delay Time td(on) N-Channel VDD = 10 V, RL = 20 W ID ^ 0.5 A, VGEN = 4.5 V, RG = 6 W P-Channel VDD = -10 V, RL = 20 W ID ^ -0.5 A, VGEN = -4.5 V, RG = 6 W P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Fall Time Source-Drain Reverse Recovery Time tf IF = 0.23 A, di/dt = 100 A/ms trr IF = -0.23 A, di/dt = 100 A/ms P-Ch N-Ch P-Ch 0.72 0.52 0.22 nC 0.11 0.13 0.14 23 7.5 30 20 10 8.5 15 12 20 25 40 15 60 40 20 17 30 24 40 40 ns 1.5 1.8
Gate-Drain Charge
Qgd
Rise Time
tr
Turn-Off Delay Time
td(off)
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
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Document Number: 71255 S-21374—Rev. B, 12-Aug-02
Si1551DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
0.6 VGS = 5 thru 3.5 V 3V I D - Drain Current (A) 0.4 I D - Drain Current (A) 0.4 25_C 0.6 TC = -55_C
N−CHANNEL
Transfer Characteristics
0.5
0.5
0.3
2.5 V
0.3 125_C 0.2
0.2 2V 0.1 1.5 V 0.0 0.0
0.1
0.5
1.0
1.5
2.0
2.5
3.0
0.0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
6 r DS(on) - On-Resistance ( W ) 100
Capacitance
5 VGS = 2.5 V 4 VGS = 2.7 V 3 VGS = 4.5 V 2 C - Capacitance (pF)
80 Ciss 60
40 Coss 20 Crss
1
0 0.0
0 0.1 0.2 0.3 0.4 0.5 0.6 0 4 8 12 16 20
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Gate Charge
5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 0.29 A 4 1.8
On-Resistance vs. Junction Temperature
VGS = 4.5 V ID = 0.29 A
r DS(on) - On-Resistance (W ) (Normalized)
1.6
1.4
3
1.2
2
1.0
1
0.8
0 0.0
0.2
0.4
0.6
0.8
0.6 -50
-25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (_C)
Document Number: 71255 S-21374—Rev. B, 12-Aug-02
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Si1551DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
1 6
N−CHANNEL
On-Resistance vs. Gate-to-Source Voltage
r DS(on) - On-Resistance ( W )
5
I S - Source Current (A)
4
ID = 0.29 A
TJ = 150_C
3
2
TJ = 25_C 0.1 0.0
1
0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage
0.2 5
Single Pulse Power
0.1 V GS(th) Variance (V) ID = 250 mA -0.0 Power (W)
4
3
-0.1
2
-0.2
1
-0.3 -50
-25
0
25
50
75
100
125
150
0 10- 3
10- 2
10- 1
1 Time (sec)
10
100
600
TJ - Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2
Notes:
0.1 0.1 0.05 0.02
PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA =400_C/W
Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec)
3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
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Document Number: 71255 S-21374—Rev. B, 12-Aug-02
Si1551DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
N−CHANNEL
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
1.0 VGS = 5 thru 3 V 0.8 I D - Drain Current (A) 2.5 V I D - Drain Current (A) 0.8 1.0
P−CHANNEL
Transfer Characteristics
TC = -55_C 25_C
0.6
0.6 125_C 0.4
0.4
2V
0.2 1V 0.0 0.0 1.5 V
0.2
0.5
1.0
1.5
2.0
2.5
3.0
0.0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
3.0 r DS(on) - On-Resistance ( W ) 100
Capacitance
2.5 C - Capacitance (pF)
80
Ciss
2.0 VGS = 2.5 V 1.5 VGS = 2.7 V VGS = 4.5 V
60
40 Coss 20 Crss
1.0
0.5
0.0 0.0
0 0.2 0.4 0.6 0.8 1.0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Document Number: 71255 S-21374—Rev. B, 12-Aug-02
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Si1551DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate Charge
5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 0.41 A 4 1.6 VGS = 4.5 V ID = 0.41 A 1.4
P−CHANNEL
On-Resistance vs. Junction Temperature
3
r DS(on) - On-Resistance (W ) (Normalized) 0.2 0.3 0.4 0.5 0.6
1.2
2
1.0
1
0.8
0 0.0
0.1
0.6 -50
-25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
1 3.0
On-Resistance vs. Gate-to-Source Voltage
r DS(on) - On-Resistance ( W )
2.5
I S - Source Current (A)
2.0
ID = 0.41 A
TJ = 150_C
1.5
TJ = 25_C
1.0
0.5
0.1 0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage
0.4 5
Single Pulse Power
0.3 V GS(th) Variance (V) ID = 250 mA 0.2 Power (W)
4
3
0.1
2
0.0 1
-0.1
-0.2 -50
-25
0
25
50
75
100
125
150
0 10- 3
10- 2
10- 1
1 Time (sec)
10
100
600
TJ - Temperature (_C)
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Document Number: 71255 S-21374—Rev. B, 12-Aug-02
Si1551DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
P−CHANNEL
0.2
Notes:
0.1 0.1
PDM
0.05
t1
0.02
t2 1. Duty Cycle, D =
t1 t2 2. Per Unit Base = RthJA = 400_C/W
Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec)
3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10
Document Number: 71255 S-21374—Rev. B, 12-Aug-02
www.vishay.com
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