SI1553CDL

Si1553CDL Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 RDS(on) () 0.390 at VGS = 4.5 V 0.510 at VGS = 2.7 V 0.578 at VGS = 2.5 V 0.850 at VGS = - 4.5 V P-Channel - 20 1.35 at VGS = - 2.7 V 1.48 at VGS = - 2.5 V ID (A)a 0.7 0.5 0.5 - 0.5 - 0.5 - 0.3 0.95 0.55 Qg (Typ.) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • DC/DC Converter D1 S2 SOT-363 SC-70 (6-LEADS) S1 1 6 D1 Marking Code G1 2 5 G2 RH XX YY G2 Lot Traceability and Date Code G1 D2 3 4 S2 Part # Code S1 N-Channel MOSFET D2 P-Channel MOSFET Top View Ordering Information: Si1553CDL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Source-Drain Current Diode Current Pulsed Drain Current (t = 300 µs) TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg PD TC = 25 °C TA = 25 °C IS IDM ID Symbol VDS VGS 0.7 0.6 0.7 b, c N-Channel 20 ± 12 P-Channel - 20 - 0.5 - 0.4 - 0.4b, c - 0.4b, c - 0.3 - 0.2b, c -1 0.34 0.22 0.29b, c 0.18b, c - 55 to 150 Unit V 0.5b, c 0.3 0.2b, c 2 0.34 0.22 0.29 b, c A W 0.18b, c °C THERMAL RESISTANCE RATINGS N-Channel Parameter Maximum Junction-to-Ambientb, d t  10 s Steady State Symbol RthJA RthJF Typ. 365 308 Max. 438 370 P-Channel Typ. 365 308 Max. 438 370 Unit °C/W Maximum Junction-to-Foot (Drain) Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 486 °C/W (N-Channel) and 486 °C/W (P-Channel). Document Number: 67693 S11-0868-Rev. A, 02-May-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1553CDL Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = 250 µA VGS = 0 V, ID = - 250 µA ID = 250 µA ID = - 250 µA ID = 250 µA ID = - 250 µA VDS = VGS, ID = 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 12 V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 °C VDS = - 20 V, VGS = 0 V, TJ = 55 °C On-State Drain Currentb ID(on) VDS =5 V, VGS = 5 V VDS = -5 V, VGS = - 5 V VGS = 4.5 V, ID = 0.7 A VGS = - 4.5 V, ID = - 0.4 A Drain-Source On-State Resistanceb RDS(on) VGS = 2.7 V, ID = 0.4 A VGS = - 2.7 V, ID = - 0.2 A VGS = 2.5 V, ID = 0.4 A VGS = - 2.5V, ID = - 0.2 A Forward Transconductanceb Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss P-Channel VDS = - 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 10 V, ID = 0.7 A Total Gate Charge Qg VDS = - 10 V, VGS = - 10 V, ID = - 0.5 A N-Channel VDS = 10 V, VGS = 4.5 V ID = 0.5 A Gate-Source Charge Gate-Drain Charge Gate Resistance Qgs Qgd Rg P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 0.4 A f = 1 MHz N-Ch N-Channel VDS = 10 V, VGS = 0 V, f = 1 MHz P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 1.5 2.1 38 43 14 16 6 10 1.2 1.9 0.55 0.95 0.15 0.25 0.15 0.25 7.2 10.3 14.4 20.6  1.8 3 1.1 1.5 nC pF gfs VDS = 15 V, ID = 0.7 A VDS = - 15 V, ID = - 0.5 A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 2 -1 0.325 0.708 0.425 1.13 0.462 1.23 1.5 0.8 0.390 0.850 0.510 1.35 0.578 1.48 S  0.6 - 0.6 20 - 20 24 - 13 - 1.8 2.3 1.5 - 1.5 ± 100 ± 100 1 -1 10 - 10 A µA V nA mV/°C V Symbol Test Conditions Min. Typ.a Max. Unit www.vishay.com 2 Document Number: 67693 S11-0868-Rev. A, 02-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1553CDL Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Dynamic a Symbol Test Conditions N-Ch N-Channel VDD = 10 V, RL = 20  ID  0.5 A, VGEN = 10 V, Rg = 1  P-Channel VDD = - 10 V, RL = 25  ID  - 0.4 A, VGEN = - 10 V, Rg = 1  P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch N-Channel VDD = 10 V, RL = 20  ID  0.5 A, VGEN = 4.5 V, Rg = 1  P-Channel VDD = - 10 V, RL = 25  ID  - 0.4 A, VGEN = - 4.5 V, Rg = 1  P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch IS = 0.5 A IS = - 0.4 A N-Ch P-Ch N-Ch P-Ch N-Channel IF = 0.5 A, dI/dt = 100 A/µs, TJ = 25 °C P-Channel IF = - 0.4 A, dI/dt = - 100 A/µs, TJ = 25 °C N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ.a 2 2 14 9 11 10 7 7 16 15 22 15 22 12 13 8 Max. 4 4 21 18 20 20 14 14 24 23 33 23 33 20 20 16 0.3 - 0.3 2 -1 Unit Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf td(on) tr td(off) tf ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb TC = 25 °C A 0.8 - 0.8 8 12 1 5 4 9 4 3 1.2 - 1.2 15 20 2 10 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 67693 S11-0868-Rev. A, 02-May-11 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1553CDL Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 VGS = 5 V thru 3 V VGS = 2.5 V 1.5 ID - Drain Current (A) ID - Drain Current (A) 0.3 TC = 25 °C 0.2 0.4 0.5 1 VGS = 2 V 0.5 0.1 VGS = 1.5 V 0 0 0.5 1 1.5 2 VDS - Drain-to-Source Voltage (V) 0 0 TC = 125 °C TC = - 55 °C 0.5 1 1.5 2 VGS - Gate-to-Source Voltage (V) Output Characteristics 0.7 50 Transfer Characteristics 0.6 RDS(on) - On-Resistance (Ω) C - Capacitance (pF) 40 Ciss 30 0.5 VGS = 2.5 V VGS =2.7 V 0.4 VGS = 4.5 V 0.3 20 10 Crss Coss 0.2 0 0.5 1 ID - Drain Current (A) 1.5 2 0 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 10 ID = 0.7 A VGS - Gate-to-Source Voltage (V) 8 VDS = 10 V RDS(on) - On-Resistance (Normalized) 1.5 1.7 ID = 0.7 A Capacitance 6 VDS = 5 V 4 VDS = 16 V 1.3 VGS = 4.5 V 1.1 2 0.9 0 0 0.3 0.6 0.9 1.2 0.7 - 50 VGS = 2.7 V - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge www.vishay.com 4 On-Resistance vs. Junction Temperature Document Number: 67693 S11-0868-Rev. A, 02-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1553CDL Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 0.8 ID = 0.7 A 0.7 IS - Source Current (A) TJ = 150 °C RDS(on) - On-Resistance (Ω) 0.6 TJ = 125 °C 1 TJ = 25 °C 0.5 0.4 TJ = 25 °C 0.3 0.1 0.0 0.3 0.6 0.9 1.2 1.5 0.2 2 4 VGS - Gate-to-Source Voltage (V) 5 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 1.1 6.4 On-Resistance vs. Gate-to-Source Voltage 1 4.8 0.9 ID = 250 μA 0.8 Power (W) 150 VGS(th) (V) 3.2 1.6 0.7 0.6 - 50 - 25 0 25 50 75 100 125 0 0.001 0.01 0.1 Time (s) 1 10 TJ - Temperature (°C) Threshold Voltage 10 Single Pulse Power, Junction-to-Ambient Limited by RDS(on)* ID - Drain Current (A) 1 100 μs 1 ms 0.1 10 ms 100 ms TC = 25 °C Single Pulse 0.01 0.1 1 10 1s 10 s, DC 100 BVDSS Limited VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 67693 S11-0868-Rev. A, 02-May-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1553CDL Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.8 0.6 ID - Drain Current (A) 0.4 0.2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 0.45 0.32 0.36 0.24 0.27 Power (W) Power (W) 0.16 0.18 0.08 0.09 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 67693 S11-0868-Rev. A, 02-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1553CDL Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 486 °C/W Single Pulse 0.01 0.0001 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 100 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 67693 S11-0868-Rev. A, 02-May-11 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1553CDL Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 VGS = 5 V thru 3 V 0.8 ID - Drain Current (A) VGS = 2.5 V ID - Drain Current (A) 0.15 0.2 0.6 0.1 TC = 25 °C 0.4 VGS = 2 V 0.05 0.2 VGS = 1.5 V 0 0 0.5 1 1.5 2 0 0 0.5 1 1.5 2 TC = 125 °C TC = - 55 °C VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 1.8 80 Transfer Characteristics 1.5 RDS(on) - On-Resistance (Ω) 60 VGS = 2.5 V 1.2 VGS = 2.7 V C - Capacitance (pF) Ciss 40 0.9 VGS = 4.5 V 0.6 20 Crss 0.3 0 0.2 0.4 0.6 0.8 1 0 0 5 10 15 Coss 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 10 ID = 0.5 A VGS - Gate-to-Source Voltage (V) 8 RDS(on) - On-Resistance (Normalized) VDS = 10 V 6 VDS = 5 V 4 VDS = 16 V 1.4 1.6 Capacitance VGS = 4.5 V 1.2 1.0 2 0.8 VGS = 2.7 V 0 0 0.5 1 1.5 2 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge www.vishay.com 8 On-Resistance vs. Junction Temperature Document Number: 67693 S11-0868-Rev. A, 02-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1553CDL Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 2 ID = 0.4 A TJ = 150 °C RDS(on) - On-Resistance (Ω) 1.5 IS - Source Current (A) 1 1 TJ = 125 °C TJ = 25 °C TJ = 25 °C 0.5 0.1 0.0 0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 1.2 6.4 On-Resistance vs. Gate-to-Source Voltage 1.05 4.8 0.9 ID = 250 μA Power (W) VGS(th) (V) 3.2 0.75 1.6 0.6 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (s) 1 10 TJ - Temperature (°C) Threshold Voltage 10 Single Pulse Power, Junction-to-Ambient Limited by RDS(on)* 1 ID - Drain Current (A) 1 ms 0.1 10 ms 100 ms 0.01 TC = 25 °C Single Pulse 0.001 0.1 1 BVDSS Limited 10 100 1s 10 s, DC VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 67693 S11-0868-Rev. A, 02-May-11 www.vishay.com 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1553CDL Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.6 0.45 ID - Drain Current (A) 0.3 0.15 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 0.45 0.32 0.36 0.24 0.27 Power (W) Power (W) 0.16 0.18 0.08 0.09 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 67693 S11-0868-Rev. A, 02-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1553CDL Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 486 °C/W Single Pulse 0.01 0.0001 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 100 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67693. Document Number: 67693 S11-0868-Rev. A, 02-May-11 www.vishay.com 11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SC 70: 6 LEADS MILLIMETERS 6 5 4 E1 E 1 2 3 -Be e1 D -Ac A2 A L A1 b INCHES Min 0.035 – 0.031 0.006 0.004 0.071 0.071 0.045 Dim A A1 A2 b c D E E1 e e1 L Min 0.90 – 0.80 0.15 0.10 1.80 1.80 1.15 Nom – – – – – 2.00 2.10 1.25 0.65BSC Max 1.10 0.10 1.00 0.30 0.25 2.20 2.40 1.35 Nom – – – – – 0.079 0.083 0.049 0.026BSC Max 0.043 0.004 0.039 0.012 0.010 0.087 0.094 0.053 1.20 0.10 1.30 0.20 7_Nom 1.40 0.30 0.047 0.004 0.051 0.008 7_Nom 0.055 0.012 ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5550 Document Number: 71154 06-Jul-01 www.vishay.com 1 AN814 Vishay Siliconix Dual-Channel LITTLE FOOTR SC-70 6-Pin MOSFET Recommended Pad Pattern and Thermal Performance INTRODUCTION This technical note discusses the pin-outs, package outlines, pad patterns, evaluation board layout, and thermal performance for dual-channel LITTLE FOOT power MOSFETs in the SC-70 package. These new Vishay Siliconix devices are intended for small-signal applications where a miniaturized package is needed and low levels of current (around 250 mA) need to be switched, either directly or by using a level shift configuration. Vishay provides these devices with a range of on-resistance specifications in 6-pin versions. The new 6-pin SC-70 package enables improved on-resistance values and enhanced thermal performance. applications for which this package is intended. For the 6-pin device, increasing the pad patterns yields a reduction in thermal resistance on the order of 20% when using a 1-inch square with full copper on both sides of the printed circuit board (PCB). EVALUATION BOARDS FOR THE DUAL SC70-6 The 6-pin SC-70 evaluation board (EVB) measures 0.6 inches by 0.5 inches. The copper pad traces are the same as described in the previous section, Basic Pad Patterns. The board allows interrogation from the outer pins to 6-pin DIP connections permitting test sockets to be used in evaluation testing. The thermal performance of the dual SC-70 has been measured on the EVB with the results shown below. The minimum recommended footprint on the evaluation board was compared with the industry standard 1-inch square FR4 PCB with copper on both sides of the board. PIN-OUT Figure 1 shows the pin-out description and Pin 1 identification for the dual-channel SC-70 device in the 6-pin configuration. SOT-363 SC-70 (6-LEADS) S1 G1 D2 1 6 5 D1 THERMAL PERFORMANCE 2 G2 S2 3 4 Junction-to-Foot Thermal Resistance (the Package Performance) Thermal performance for the dual SC-70 6-pin package measured as junction-to-foot thermal resistance is 300_C/W typical, 350_C/W maximum. The “foot” is the drain lead of the device as it connects with the body. Note that these numbers are somewhat higher than other LITTLE FOOT devices due to the limited thermal performance of the Alloy 42 lead-frame compared with a standard copper lead-frame. Junction-to-Ambient Thermal Resistance (dependent on PCB size) Top View FIGURE 1. For package dimensions see outline drawing SC-70 (6-Leads) (http://www.vishay.com/doc?71154) BASIC PAD PATTERNS See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/doc?72286) for the 6-pin SC-70. This basic pad pattern is sufficient for the low-power The typical RθJA for the dual 6-pin SC-70 is 400_C/W steady state. Maximum ratings are 460_C/W for the dual. All figures based on the 1-inch square FR4 test board. The following example shows how the thermal resistance impacts power dissipation for the dual 6-pin SC-70 package at two different ambient temperatures. Document Number: 71237 12-Dec-03 www.vishay.com 1 AN814 Vishay Siliconix SC-70 (6-PIN) Room Ambient 25 _C PD + TJ(max) * TA Rq JA 500 Elevated Ambient 60 _C PD + Rq JA Thermal Resistance (C/W) Dual EVB 400 TJ(max) * TA o* o PD + 150 Co 25 C 400 C W o* o PD + 150 Co 60 C 400 C W 300 PD + 312 mW PD + 225 mW 200 NOTE: Although they are intended for low-power applications, devices in the 6-pin SC-70 will handle power dissipation in excess of 0.2 W. Testing To aid comparison further, Figure 2 illustrates the dual-channel SC-70 thermal performance on two different board sizes and two different pad patterns. The results display the thermal performance out to steady state. The measured steady state values of RθJA for the dual 6-pin SC-70 are as follows: 100 1” Square FR4 PCB 0 10-5 10-4 10-3 10-2 10-1 1 10 100 1000 Time (Secs) FIGURE 2. Comparison of Dual SC70-6 on EVB and 1” Square FR4 PCB. LITTLE FOOT SC-70 (6-PIN) 1) Minimum recommended pad pattern (see Figure 2) on the EVB of 0.5 inches x 0.6 inches. 2) Industry standard 1” square PCB with maximum copper both sides. 518_C/W 413_C/W The results show that if the board area can be increased and maximum copper traces are added, the thermal resistance reduction is limited to 20%. This fact confirms that the power dissipation is restricted with the package size and the Alloy 42 leadframe. ASSOCIATED DOCUMENT Single-Channel LITTLE FOOT SC-70 6-Pin MOSFET Copper Leadframe Version, REcommended Pad Pattern and Thermal Performance, AN815, (http://www.vishay.com/doc?71334). www.vishay.com 2 Document Number: 71237 12-Dec-03 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead 0.067 (1.702) (2.438) 0.016 (0.406) 0.026 (0.648) 0.010 (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE www.vishay.com 18 (1.143) 0.096 0.045 (0.648) 0.026 Document Number: 72602 Revision: 21-Jan-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1