SI1553DL

Si1553DL Vishay Siliconix Complementary 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 rDS(on) (W) 0.385 @ VGS = 4.5 V 0.630 @ VGS = 2.5 V 0.995 @ VGS = -4.5 V ID (A) "0.70 "0.54 "0.44 "0.32 P-Channel -20 1.800 @ VGS = -2.5 V SOT-363 SC-70 (6-LEADS) S1 1 6 D1 Marking Code RA G1 2 5 G2 XX YY Lot Traceability and Date Code Part # Code D2 3 4 S2 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID IDM IS 0.25 0.30 0.16 0.23 0.27 0.14 -55 to 150 P-Channel 5 secs Steady State -20 "12 V "0.44 "0.31 "1.0 -0.25 0.30 0.16 -0.23 0.27 0.14 W _C "0.41 "0.30 A Symbol VDS VGS 5 secs Steady State 20 Unit "0.70 "0.50 "0.66 "0.48 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71078 S-21374—Rev. D, 12-Aug-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 360 400 300 Maximum 415 460 350 Unit _C/W 2-1 Si1553DL Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "12 V VDS = 16 V, VGS = 0 V VDS = -16 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V, TJ = 85_C VDS = -16 V, VGS = 0 V, TJ = 85_C On-State Drain Currenta VDS w 5 V, VGS = 4.5 V ID(on) VDS p -5 V, VGS = -4.5 V VGS = 4.5 V, ID = 0.66 A Drain-Source On-State Resistancea VGS = -4.5 V, ID = -0.41 A rDS(on) VGS = 2.5 V, ID = 0.40 A VGS = -2.5 V, ID = -0.25 A Forward Transconductancea VDS = 10 V, ID = 0.66 A gfs VDS = -10 V, ID = -0.41 A IS = 0.23 A, VGS = 0 V VSD IS = -0.23 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 1.0 -1.0 0.320 0.850 0.560 1.4 1.5 0.8 0.8 -0.8 1.2 -1.2 V S 0.385 0.995 0.630 1.800 W A 0.6 V -0.6 "100 "100 1 -1 5 -5 mA nA Symbol Test Condition Min Typ Max Unit Gate-Body Leakage IGSS Diode Forward Voltagea Dynamicb N-Ch Total Gate Charge Qg N-Channel VDS = 10 V, VGS = 4.5 V, ID = 0.66 A Gate-Source Charge Qgs P-Channel VDS = -10 V, VGS = -4.5 V, ID = -0.41 A P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Turn-On Delay Time td(on) N-Channel VDD = 10 V, RL = 20 W ID ^ 0.5 A, VGEN = 4.5 V, RG = 6 W P-Channel VDD = -10 V, RL = 20 W ID ^ -0.5 A, VGEN = -4.5 V, RG = 6 W P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Fall Time Source-Drain Reverse Recovery Time tf IF = 0.23 A, di/dt = 100 A/ms trr IF = -0.23 A, di/dt = 100 A/ms P-Ch N-Ch P-Ch 0.8 1.2 0.06 nC 0.45 0.30 0.25 10 7.5 16 20 10 8.5 10 12 20 25 20 15 30 40 20 17 20 24 40 40 ns 1.2 1.8 Gate-Drain Charge Qgd Rise Time tr Turn-Off Delay Time td(off) Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2-2 Document Number: 71078 S-21374—Rev. D, 12-Aug-02 Si1553DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 1.0 VGS = 5 thru 2.5 V 0.8 I D - Drain Current (A) I D - Drain Current (A) 2V 0.6 0.8 1.0 N−CHANNEL Transfer Characteristics 0.6 0.4 0.4 TC = 125_C 0.2 25_C 0.2 1.5 V 1V -55 _C 1.5 2.0 2.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.0 0.5 1.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 1.0 r DS(on) - On-Resistance ( W ) 100 Capacitance C - Capacitance (pF) 0.8 80 Ciss 60 0.6 VGS = 2.5 V 0.4 VGS = 4.5 V 40 Coss 20 Crss 0.2 0.0 0.0 0 0.2 0.4 0.6 0.8 1.0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 0.66 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 0.66 A 1.4 3 r DS(on) - On-Resistance (W ) (Normalized) 0.4 0.6 0.8 1.2 2 1.0 1 0.8 0 0.0 0.2 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 71078 S-21374—Rev. D, 12-Aug-02 www.vishay.com 2-3 Si1553DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 1 1.0 N−CHANNEL On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 0.8 ID = 0.66 A I S - Source Current (A) TJ = 150_C 0.6 0.4 TJ = 25_C 0.2 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.2 5 Single Pulse Power 0.1 V GS(th) Variance (V) ID = 250 mA -0.0 Power (W) 4 3 -0.1 2 -0.2 1 -0.3 -0.4 -50 -25 0 25 50 75 100 125 150 0 10- 3 10- 2 10- 1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA =400_C/W Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 2-4 Document Number: 71078 S-21374—Rev. D, 12-Aug-02 Si1553DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 N−CHANNEL 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 1.0 VGS = 5 thru 3 V 0.8 I D - Drain Current (A) 2.5 V I D - Drain Current (A) 0.8 1.0 P−CHANNEL Transfer Characteristics TC = -55_C 25_C 0.6 0.6 125_C 0.4 0.4 2V 0.2 1V 0.0 0.0 1.5 V 0.2 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 3.0 r DS(on) - On-Resistance ( W ) 100 Capacitance 2.5 C - Capacitance (pF) 80 Ciss 2.0 VGS = 2.5 V 1.5 VGS = 3.6 V 1.0 VGS = 4.5 V 0.5 60 40 Coss 20 Crss 0.0 0.0 0 0.2 0.4 0.6 0.8 1.0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Document Number: 71078 S-21374—Rev. D, 12-Aug-02 www.vishay.com 2-5 Si1553DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 0.41 A 4 1.6 VGS = 4.5 V ID = 0.41 A 1.4 P−CHANNEL On-Resistance vs. Junction Temperature 3 r DS(on) - On-Resistance (W ) (Normalized) 0.6 0.8 1.0 1.2 1.4 1.2 2 1.0 1 0.8 0 0.0 0.2 0.4 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 1 3.0 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 2.5 I S - Source Current (A) 2.0 ID = 0.41 A TJ = 150_C 1.5 TJ = 25_C 1.0 0.5 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 5 Single Pulse Power 0.3 V GS(th) Variance (V) ID = 250 mA 0.2 Power (W) 4 3 0.1 2 0.0 1 -0.1 -0.2 -50 -25 0 25 50 75 100 125 150 0 10- 3 10- 2 10- 1 1 Time (sec) 10 100 600 TJ - Temperature (_C) www.vishay.com 2-6 Document Number: 71078 S-21374—Rev. D, 12-Aug-02 Si1553DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 P−CHANNEL 0.2 Notes: 0.1 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 400_C/W Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71078 S-21374—Rev. D, 12-Aug-02 www.vishay.com 2-7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1