SI1555DL

Si1555DL Vishay Siliconix Complementary Low-Threshold MOSFET Pair PRODUCT SUMMARY VDS (V) N-Channel 20 rDS(on) (W) 0.385 @ VGS = 4.5 V 0.630 @ VGS = 2.5 V 0.600 @ VGS = -4.5 V ID (A) "0.70 "0.54 "0.60 "0.50 "0.42 P-Channel -8 0.850 @ VGS = -2.5 V 1.200 @ VGS = -1.8 V SOT-363 SC-70 (6-LEADS) S1 1 6 D1 Marking Code RB G1 2 5 G2 XX YY Lot Traceability and Date Code Part # Code D2 3 4 S2 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID IDM IS 0.25 0.30 0.16 0.23 0.27 0.14 -55 to 150 P-Channel 5 secs Steady State -8 "8 V "0.57 "0.41 A -0.25 0.30 0.16 -0.23 0.27 0.14 W _C Symbol VDS VGS 5 secs Steady State 20 "12 Unit "0.70 "0.50 "0.66 "0.48 "1.0 "0.60 "0.43 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71079 S-21374—Rev. C, 12-Aug-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 360 400 300 Maximum 415 460 350 Unit _C/W 1 Si1555DL Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "12 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V VDS = 16 V, VGS = 0 V VDS = -6.4 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V, TJ = 85_C VDS = -6.4 V, VGS = 0 V, TJ = 85_C On-State Drain Currenta VDS w 5 V, VGS = 4.5 V ID(on) VDS p -5 V, VGS = -4.5 V VGS = 4.5 V, ID = 0.66 A VGS = -4.5 V, ID = -0.57 A Drain-Source On-State Resistancea rDS(on) VGS = 2.5 V, ID = 0.40 A VGS = -2.5 V, ID = -0.48 A VGS = -1.8 V, ID = -0.20 A Forward Transconductancea VDS = 10 V, ID = 0.66 A gfs VDS = -4 V, ID = -0.57 A IS = 0.23 A, VGS = 0 V VSD IS = -0.23 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 1.0 -1.0 0.320 0.510 0.560 0.720 1.00 1.5 1.2 0.8 -0.8 1.2 -1.2 V S 0.385 0.600 0.630 0.850 1.200 W A 0.6 V -0.45 "100 "100 1 -1 5 -5 mA nA Symbol Test Condition Min Typ Max Unit Diode Forward Voltagea Dynamicb N-Ch Total Gate Charge Qg N-Channel VDS = 10 V, VGS = 4.5 V, ID = 0.66 A Gate-Source Charge Qgs P-Channel VDS = -4 V, VGS = -4.5 V, ID = -0.57 A P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Turn-On Delay Time td(on) N-Channel VDD = 10 V, RL = 20 W ID ^ 0.5 A, VGEN = 4.5 V, RG = 6 W P-Channel VDD = -4 V, RL = 8 W ID ^ -0.5 A, VGEN = -4.5 V, RG = 6 W P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Fall Time Source-Drain Reverse Recovery Time tf IF = 0.23 A, di/dt = 100 A/ms trr IF = -0.23 A, di/dt = 100 A/ms P-Ch N-Ch P-Ch 0.8 1.5 0.06 nC 0.17 0.30 0.16 10 6 16 25 10 10 10 10 20 20 20 12 30 50 20 20 20 20 40 40 ns 1.2 2.3 Gate-Drain Charge Qgd Rise Time tr Turn-Off Delay Time td(off) Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 71079 S-21374—Rev. C, 12-Aug-02 Si1555DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 1.0 VGS = 5 thru 2.5 V 0.8 I D - Drain Current (A) I D - Drain Current (A) 2V 0.6 0.8 1.0 N−CHANNEL Transfer Characteristics 0.6 0.4 0.4 TC = 125_C 0.2 25_C 0.2 1.5 V 1V -55 _C 1.5 2.0 2.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.0 0.5 1.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 1.0 r DS(on) - On-Resistance ( W ) 100 Capacitance C - Capacitance (pF) 0.8 80 Ciss 60 0.6 VGS = 2.5 V 0.4 VGS = 4.5 V 40 Coss 20 Crss 0.2 0.0 0.0 0 0.2 0.4 0.6 0.8 1.0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 0.66 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 0.66 A 1.4 3 r DS(on) - On-Resistance (W ) (Normalized) 0.4 0.6 0.8 1.2 2 1.0 1 0.8 0 0.0 0.2 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 71079 S-21374—Rev. C, 12-Aug-02 www.vishay.com 3 Si1555DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 1 1.0 N−CHANNEL On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 0.8 ID = 0.66 A I S - Source Current (A) TJ = 150_C 0.6 0.4 TJ = 25_C 0.2 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.2 5 Single Pulse Power 0.1 V GS(th) Variance (V) ID = 250 mA -0.0 Power (W) 4 3 -0.1 2 -0.2 1 -0.3 -0.4 -50 -25 0 25 50 75 100 125 150 0 10- 3 10- 2 10- 1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 400_C/W Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71079 S-21374—Rev. C, 12-Aug-02 Si1555DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 N−CHANNEL 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 1.0 VGS = 5 thru 2.5 V 0.8 I D - Drain Current (A) I D - Drain Current (A) 2V 0.8 1.0 TC = -55_C 25_C P−CHANNEL Transfer Characteristics 125_C 0.6 0.6 1.5 V 0.4 0.4 0.2 1V 0.0 0.0 0.2 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 2.0 r DS(on) - On-Resistance ( W ) 160 Capacitance 1.5 C - Capacitance (pF) VGS = 1.8 V 120 Ciss 1.0 VGS = 2.5 V VGS = 4.5 V 80 Coss 40 Crss 0.5 0.0 0.0 0 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Document Number: 71079 S-21374—Rev. C, 12-Aug-02 www.vishay.com 5 Si1555DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 4 V ID = 0.57 A 4 1.6 VGS = 4.5 V ID = 0.57 A 1.4 P−CHANNEL On-Resistance vs. Junction Temperature 3 r DS(on) - On-Resistance (W ) (Normalized) 0.6 0.8 1.0 1.2 1.4 1.6 1.2 2 1.0 1 0.8 0 0.0 0.2 0.4 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 1 2.0 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) I S - Source Current (A) 1.5 ID = 0.57 A 1.0 TJ = 150_C TJ = 25_C 0.5 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 5 Single Pulse Power 0.3 V GS(th) Variance (V) ID = 250 mA 0.2 Power (W) 4 3 0.1 2 0.0 1 -0.1 -0.2 -50 -25 0 25 50 75 100 125 150 0 10- 3 10- 2 10- 1 1 Time (sec) 10 100 600 TJ - Temperature (_C) www.vishay.com 6 Document Number: 71079 S-21374—Rev. C, 12-Aug-02 Si1555DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 P−CHANNEL 0.2 Notes: 0.1 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 400_C/W Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71079 S-21374—Rev. C, 12-Aug-02 www.vishay.com 7