Si1563DH
New Product
Vishay Siliconix
Complementary 20-V (D-S) Low-Threshold MOSFET
PRODUCT SUMMARY
VDS (V)
N-Channel 20
FEATURES
rDS(on) (W)
0.280 @ VGS = 4.5 V 0.360 @ VGS = 2.5 V 0.450 @ VGS = 1.8 V 0.490 @ VGS = -4.5 V
ID (A)
1.28 1.13 1.00 -1.00 -0.81 -0.67
D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package D Fast Switching
APPLICATIONS
D Load Switch for Portable Devices
P-Channel
-20
0.750 @ VGS = -2.5 V 1.10 @ VGS = -1.8 V
D1
S2
SOT-363 SC-70 (6-LEADS)
S1 1 6 D1 Marking Code EB G1 2 5 G2 XX YY G1 Lot Traceability and Date Code Part # Code S1 N-Channel Top View D2 P-Channel G2
D2
3
4
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID IDM IS 0.61 0.74 0.38
P-Channel 5 secs Steady State
-20 "8 V -0.88 -0.63 -3.0 A -0.48 0.57 0.3 W _C
Symbol
VDS VGS
5 secs
Steady State
20 "8
Unit
1.28 0.92 4.0
1.13 0.81
- 1.00 -0.72
0.48 0.57 0.30 -55 to 150
-0.61 0.30 0.16
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71963 S-21483—Rev. A, 26-Aug-02 www.vishay.com Steady State Steady State RthJA RthJF
Symbol
Typical
130 170 80
Maximum
170 220 100
Unit
_C/W
1
Si1563DH
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 100 mA VDS = VGS, ID = -100 mA VDS = 0 V, VGS = "8 V VDS = 16 V, VGS = 0 V VDS = -16 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V, TJ = 85_C VDS = -16 V, VGS = 0 V, TJ = 85_C On-State Drain Currenta VDS w 5 V, VGS = 4.5 V ID(on) VDS p -5 V, VGS = -4.5 V VGS = 4.5 V, ID = 1.13 A VGS = -4.5 V, ID = -0.88 A Drain-Source On-State Resistancea VGS = 2.5 V, ID = 0.99 A rDS(on) VGS = -2.5 V, ID = -0.71 A VGS = 1.8 V, ID = 0.20 A VGS = -1.8 V, ID = -0.20 A Forward Transconductancea VDS = 10 V, ID = 1.13 A gfs VDS = -10 V, ID = -0.88 A IS = 0.48 A, VGS = 0 V VSD IS = -0.48 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 2 -2 0.220 0.400 0.281 0.610 0.344 0.850 2.6 1.5 0.8 -0.8 1.2 -1.2 V S 0.280 0.490 0.360 0.750 0.450 1.10 W A 0.45 -0.45 1 V 1 "100 "100 1 -1 5 -5 mA nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate-Body Leakage
IGSS
Diode Forward Voltagea
Dynamicb
N-Ch Total Gate Charge Qg N-Channel VDS = 10 V, VGS = 4.5 V, ID = 1.13 A Gate-Source Charge Qgs P-Channel VDS = -10 V, VGS = -4.5 V, ID = -0.88 A P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Turn-On Delay Time td(on) N-Channel VDD = 10 V, RL = 20 W ID ^ 0.5 A, VGEN = 4.5 V, RG = 6 W P-Channel VDD = -10 V, RL = 20 W ID ^ -0.5 A, VGEN = -4.5 V, RG = 6 W P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Fall Time tf P-Ch IF = 0.48 A, di/dt = 100 A/ms N-Ch P-Ch 1.25 1.2 0.21 nC 0.3 0.3 0.21 15 18 22 25 25 15 12 12 30 30 25 30 35 40 40 25 20 20 60 60 ns 2 1.8
Gate-Drain Charge
Qgd
Rise Time
tr
Turn-Off Delay Time
td(off)
Reverse Recovery Time
trr
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
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Document Number: 71963 S-21483—Rev. A, 26-Aug-02
Si1563DH
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
2.0 VGS = 5 thru 2 V 2.0 TC = -55_C 1.5 I D - Drain Current (A) 1.5 V 25_C
Vishay Siliconix
N−CHANNEL
Transfer Characteristics
1.5 I D - Drain Current (A)
125_C 1.0
1.0
0.5 1V 0.0 0 1 2 3 4
0.5
0.0 0.0
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.6 160
Capacitance
r DS(on) - On-Resistance ( W )
0.5 C - Capacitance (pF) 120 Ciss 80
0.4
VGS = 1.8 V VGS = 2.5 V VGS = 4.5 V
0.3
0.2
40 0.1 Crss 0.0 0.0 0 0.5 1.0 ID - Drain Current (A) 1.5 2.0 0 4
Coss
8
12
16
20
VDS - Drain-to-Source Voltage (V)
Gate Charge
5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 1.28 A 1.6
On-Resistance vs. Junction Temperature
3
r DS(on) - On-Resistance (W ) (Normalized)
4
1.4
VGS = 4.5 V ID = 1.13 A
1.2
2
1.0
1
0.8
0 0.0
0.3
0.6
0.9
1.2
1.5
0.6 -50
-25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (_C)
Document Number: 71963 S-21483—Rev. A, 26-Aug-02
www.vishay.com
3
Si1563DH
Vishay Siliconix
New Product
N−CHANNEL
On-Resistance vs. Gate-to-Source Voltage
0.6 TJ = 150_C r DS(on) - On-Resistance ( W ) 1 I S - Source Current (A)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
2
0.5
0.4 ID = 1.13 A 0.3
TJ = 25_C
0.2
0.1
0.1 0 0.2 0.4 0.6 0.8 1.0 1.2
0.0 0 1 2 3 4 5
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Threshold Voltage
0.2 ID = 100 mA 5
Single Pulse Power, Junction-to-Ambient
0.1 V GS(th) Variance (V)
4
-0.0 Power (W) 3
-0.1
2
-0.2 1
-0.3
-0.4 -50
-25
0
25
50
75
100
125
150
0 0.01
0.1
1 Time (sec)
10
100
600
TJ - Temperature (_C)
Safe Operating Area, Junction-to-Ambient
10 IDM Limited rDS(on) Limited I D - Drain Current (A) 1 P(t) = 0.01 ID(on) Limited P(t) = 0.1 0.1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 P(t) = 1 P(t) = 10 dc P(t) = 0.0001 P(t) = 0.001
VDS - Drain-to-Source Voltage (V)
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Document Number: 71963 S-21483—Rev. A, 26-Aug-02
Si1563DH
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
Vishay Siliconix
N−CHANNEL
0.2
Notes:
0.1 0.1
PDM
0.05
t1 t2 1. Duty Cycle, D = t1 t2
0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec)
2. Per Unit Base = RthJA = 170_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2 0.1 0.1 0.05
0.02 Single Pulse
0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10
Document Number: 71963 S-21483—Rev. A, 26-Aug-02
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5
Si1563DH
Vishay Siliconix
New Product
P−CHANNEL
Transfer Characteristics
3.0 3V TC = -55_C 25_C
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
3.0 VGS = 5 thru 3 .5V 2.5 2.5
I D - Drain Current (A)
2.0
I D - Drain Current (A)
2.5 V
2.0
1.5 2V 1.0 1.5 V 1V 0.0 0 1 2 3 4
1.5 125_C 1.0
0.5
0.5
0.0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
1.6 VGS = 1.8 V C - Capacitance (pF) 1.2 120 160
Capacitance
r DS(on) - On-Resistance ( W )
Ciss
VGS = 2.5 V 0.8
80
VGS = 4.5 V 0.4
40
Coss
0.0 0.0
0 0.5 1.0 1.5 2.0 2.5 3.0 0
Crss 2 4 6 8 10 12
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Gate Charge
5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 0.9 A 1.6
On-Resistance vs. Junction Temperature
3
r DS(on) - On-Resistance (W ) (Normalized)
4
1.4
VGS = 4.5 V ID = 0.88 A
1.2
2
1.0
1
0.8
0 0.0
0.3
0.6
0.9
1.2
1.5
0.6 -50
-25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (_C)
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Document Number: 71963 S-21483—Rev. A, 26-Aug-02
Si1563DH
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
2 1.6
Vishay Siliconix
P−CHANNEL
On-Resistance vs. Gate-to-Source Voltage
1 I S - Source Current (A)
r DS(on) - On-Resistance ( W )
TJ = 150_C
1.2
ID = 0.88 A 0.8
TJ = 25_C
0.4
0.1 0 0.2 0.4 0.6 0.8 1.0 1.2
0.0 0 1 2 3 4 5
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Threshold Voltage
0.30 0.25 0.20 V GS(th) Variance (V) 0.15 0.10 0.05 -0.00 -0.05 -0.10 -0.15 -50 0 0.01 1 Power (W) 3 ID = 100 mA 5
Single Pulse Power, Junction-to-Ambient
4
2
-25
0
25
50
75
100
125
150
0.1
1 Time (sec)
10
100
600
TJ - Temperature (_C)
Safe Operating Area, Junction-to-Ambient
10 IDM Limited P(t) = 0.0001 rDS(on) Limited I D - Drain Current (A) 1 P(t) = 0.001 ID(on) Limited 0.1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc
VDS - Drain-to-Source Voltage (V)
Document Number: 71963 S-21483—Rev. A, 26-Aug-02
www.vishay.com
7
Si1563DH
Vishay Siliconix
New Product
P−CHANNEL TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2
Notes:
0.1 0.1 0.05
t1 t2 1. Duty Cycle, D = t1 t2 PDM
0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec)
2. Per Unit Base = RthJA = 170_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1 Duty Cycle = 0.5
Normalized Effective Transient Thermal Impedance
0.2 0.1 0.1 0.05
0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10
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Document Number: 71963 S-21483—Rev. A, 26-Aug-02