SI1865DL

Si1865DL New Product Vishay Siliconix Load Switch with Level-Shift PRODUCT SUMMARY VDS2 (V) 1.8 to 8 rDS(on) (W) 0.215 @ VIN = 4.5 V 0.300 @ VIN = 2.5 V 0.440 @ VIN = 1.8 V ID (A) "1.2 "1.0 "0.7 1.8 V Rated D Low Profile, Small Footprint SC70-6 Package D 2000-V ESD Protection On Input Switch, VON/OFF D Adjustable Slew-Rate FEATURES D 215-mW Low rDS(on) TrenchFETR D 1.8 to 8-V Input D 1.5 to 8-V Logic Level Control DESCRIPTION The Si1865DL includes a p- and n-channel MOSFET in a single SC70-6 package. The low on-resistance p-channel TrenchFET is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a level-shift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5-V. The Si1865DL operates on supply lines from 1.8 to 8 V, and can drive loads up to 1.2 A. APPLICATION CIRCUITS Si1865DL 20 4 VIN Q2 R1 6 6 C1 Time ( mS) 12 tf 8 td(off) Co Q1 LOAD 4 td(on) Ci 1 R2 R2 GND 0 0 2 4 R2 (kW) Note: For R2 switching variations with other VIN/R1 combinations See Typical Characteristics 6 8 10 2, 3 VOUT 16 Switching Variation R2 @ VIN = 2.5 V, R1 = 20 kW IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF tr 5 ON/OFF COMPONENTS R1 R2 C1 Pull-Up Resistor Optional Slew-Rate Control Optional Slew-Rate Control Typical 10 kW to 1 mW* Typical 0 to 100 kW* Typical 1000 pF The Si1865DL is ideally suited for high-side load switching in portable applications. The integrated n-channel level-shift device saves space by reducing external components. The slew rate is set externally so that rise-times can be tailored to different load types. *Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on. Document Number: 71297 S-02987—Rev. B, 29-Jan-01 www.vishay.com 1 Si1865DL Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM Si1865DL SC70-6 Top View S2 Q2 R2 1 6 R1, C1 6 R1, C1 D2 2 5 ON/OFF 5 ON/OFF Q1 4 2, 3 D2 New Product D2 3 4 S2 1 R2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Input Voltage ON/OFF Voltage Continuousa, b Load Current Continuous Intrinsic Diode Conductiona Maximum Power Dissipationa Operating Junction and Storage Temperature Range ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 W) Pulsedb, c IL IS PD TJ, Tstg ESD Symbol VIN VON/OFF Limit 8 8 "1.2 "3 –0.4 0.4 –55 to 150 2 Unit V A W _C kV THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (continuous Maximum Junction-to-Foot (Q2) current)a Symbol RthJA RthJC Typical 260 180 Maximum 320 220 Unit _C/W SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter OFF Characteristics Reverse Leakage Current Diode Forward Voltage IFL VSD VIN = 8 V, VON/OFF = 0 V IS = –0.4 A 0.85 1 1.1 mA V Symbol Test Condition Min Typ Max Unit ON Characteristics Input Voltage Range VIN VON/OFF = 1.5 V, VIN = 4.5 V, ID = 1.2 A On-Resistance (p-channel) @ 1 A rDS(on) VON/OFF = 1.5 V, VIN = 2.5 V, ID = 1.0 A VON/OFF = 1.5 V, VIN = 1.8 V, ID = 0.7 A On-State (p-channel) Drain-Current ID(on) VIN-OUT v 0.2 V, VIN = 5 V, VON/OFF = 1.5 V VIN-OUT v 0.3 V, VIN = 3 V, VON/OFF = 1.5 V 1 1 A 1.8 0.180 0.250 0.367 8 0.215 0.300 0.440 W V Notes a. Surface Mounted on FR4 Board. b. VIN = 8 V, VON/OFF = 8 V, TA = 25_C. c. Pulse test: pulse width v300 ms, duty cycle v2%. www.vishay.com Document Number: 71297 S-02987—Rev. B, 29-Jan-01 2 Si1865DL New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) VDROP vs. IL @ VIN = 4.5 V 0.8 VON/OFF = 1.5 to 8 V VON/OFF = 1.5 to 8 V 0.8 0.6 V DROP (V) V DROP (V) 0.6 TJ = 125_C 0.4 TJ = 25_C 0.2 1.0 Vishay Siliconix VDROP vs. IL @ VIN = 2.5 V 0.4 TJ = 125_C TJ = 25_C 0.2 0.0 0.0 0.5 1.0 1.5 IL – (A) 2.0 2.5 3.0 0.0 0.0 0.5 1.0 IL – (A) 1.5 2.0 2.5 VDROP vs. IL @ VIN = 1.8 V 1.0 VON/OFF = 1.5 to 8 V 0.8 0.6 V DROP (V) 0.8 VDROP vs. VIN @ IL = 0.7 A VON/OFF = 1.5 to 8 V V DROP (V) 0.6 TJ = 125_C 0.4 TJ = 25_C 0.4 0.2 0.2 TJ = 25_C 0.0 0.2 0.4 0.6 0.8 IL – (A) 1.0 1.2 1.4 1.6 0 1 2 3 VIN (V) TJ = 125_C 0.0 0.0 4 5 6 VDROP Variance vs. Junction Temperature 0.10 IL = 0.7 A VON/OFF = 1.5 to 8 V r SS(on) – On-Resistance ( W ) 0.06 V DROP Variance (V) VIN = 1.8 V 0.8 1.0 On-Resistance vs. Input Voltage IL = 0.7 A VON/OFF = 1.5 to 8 V 0.02 VIN = 4.5 V –0.02 0.6 0.4 TJ = 125_C 0.2 TJ = 25_C –0.06 –0.10 –50 0.0 –25 0 25 50 75 100 125 150 0 1 2 3 VIN (V) 4 5 6 TJ – Junction Temperature (_C) Document Number: 71297 S-02987—Rev. B, 29-Jan-01 www.vishay.com 3 Si1865DL Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized On-Resistance vs. Junction Temperature 1.5 IL = 0.7 A VON/OFF = 1.5 to 8 V r DS(on) – On-Resistance (W ) (Normalized) 1.3 16 20 Switching Variation R2 @ VIN = 4.5 V, R1 = 20 kW IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF tf td(off) VIN = 1.8 V 0.9 VIN = 4.5 V 0.7 Time ( mS) 1.1 12 8 tr 4 td(on) 0.5 –50 0 –25 0 25 50 75 100 125 150 0 2 4 R2 (kW) 6 8 10 TJ – Junction Temperature (_C) 20 Switching Variation R2 @ VIN = 2.5 V, R1 = 20 kW IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF 30 Switching Variation R2 @ VIN = 1.8 V, R1 = 20 kW IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF tr 16 tr 24 Time ( mS) 12 tf 8 td(off) 4 td(on) 0 0 2 4 R2 (kW) 6 8 10 Time ( mS) 18 12 tf 6 td(off) td(on) 0 0 2 4 R2 (kW) 6 8 200 Switching Variation R2 @ VIN = 4.5 V, R1 = 300 kW td(off) 150 Switching Variation R2 @ VIN = 2.5 V, R1 = 300 kW tf 160 tf 120 td(off) Time ( mS) 120 Time ( mS) 80 IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF 90 60 IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF tr 40 tr td(on) 0 0 20 40 R2 (kW) 60 80 100 30 td(on) 0 0 20 40 60 R2 (kW) 80 100 www.vishay.com 4 Document Number: 71297 S-02987—Rev. B, 29-Jan-01 Si1865DL New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Switching Variation R2 @ VIN = 1.8 V, R1 = 300 kW Vishay Siliconix 120 tf 90 td(off) Time ( mS) IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF tr 30 td(on) 60 0 0 20 40 R2 (kW) 60 80 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 320_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 10–4 10–3 10–2 10–1 1 4. Surface Mounted 10 100 600 Square Wave Pulse Dureation (sec) Document Number: 71297 S-02987—Rev. B, 29-Jan-01 www.vishay.com 5