SI1867DL

Si1867DL New Product Vishay Siliconix Load Switch with Level-Shift PRODUCT SUMMARY VDS2 (V) 1.8 to 8 rDS(on) (W) 0.600 @ VIN = 4.5 V 0.850 @ VIN = 2.5 V 1.200 @ VIN = 1.8 V FEATURES ID (A) "0.6 "0.5 "0.4 D D D D D D TrenchFETr Power MOSFET Lead Free 600-mW Low rDS(on) 1.8- to 8-V Input 1.5- to 8-V Logic Level Control Lead Free APPLICATIONS D Load Switch with Level-Shift for Portable Applications DESCRIPTION The Si1867DL includes a p- and n-channel MOSFET in a single SC70-6 package. The low on-resistance p-channel TrenchFET is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a level-shift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5-V. The Si1867DL operates on supply lines from 1.8 to 8 V, and can drive loads up to 0.6 A. APPLICATION CIRCUITS Si1867DL 2, 3 VOUT Q2 6 6 C1 Time ( mS) 12 10 8 6 4 2 Ci 1 R2 R2 GND 0 0 2 4 R2 (kW) Note: For R2 switching variations with other VIN/R1 combinations See Typical Characteristics 6 8 10 td(off) Switching Variation R2 @ VIN = 2.5 V, R1 = 20 kW IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF tr 4 VIN R1 tf ON/OFF 5 Q1 Co LOAD td(on) COMPONENTS R1 R2 C1 Pull-Up Resistor Optional Slew-Rate Control Optional Slew-Rate Control Typical 10 kW to 1 mW* Typical 0 to 100 kW* Typical 1000 pF The Si1867DL is ideally suited for high-side load switching in portable applications. The integrated n-channel level-shift device saves space by reducing external components. The slew rate is set externally so that rise-times can be tailored to different load types. *Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on. Document Number: 72534 S-32132—Rev. A, 27-Oct-03 www.vishay.com 1 Si1867DL Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM SC70-6 Si1867DL 4 S2 6 5 R1, C1 6 ON/OFF 5 Q1 R1, C1 Q2 2, 3 D2 New Product Top View R2 1 D2 2 D2 3 4 S2 ON/OFF Ordering Information: Si1867DL-T1-E3 R2 1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Input Voltage ON/OFF Voltage Load Current Continuous Intrinsic Diode Conductiona Maximum Power Dissipationa Operating Junction and Storage Temperature Range ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 W) Continuousa, b Pulsedb, c Symbol VIN VON/OFF IL IS PD TJ, Tstg ESD Limit 8 8 "0.6 "3 −0.4 0.4 −55 to 150 2 Unit V A W _C kV THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (continuous Maximum Junction-to-Foot (Q2) current)a Symbol RthJA RthJF Typical 260 190 Maximum 320 230 Unit _C/W SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter OFF Characteristics Reverse Leakage Current Diode Forward Voltage IFL VSD VIN = 8 V, VON/OFF = 0 V IS = −0.4 A 0.85 1 1.1 mA V Symbol Test Condition Min Typ Max Unit ON Characteristics Input Voltage Range VIN VON/OFF = 1.5 V, VIN = 4.5 V, ID = 0.6 A On-Resistance (p-channel) @ 1 A rDS(on) () VON/OFF = 1.5 V, VIN = 2.5 V, ID = 0.5 A VON/OFF = 1.5 V, VIN = 1.8 V, ID = 0.4 A On-State (p-channel) Drain-Current On State (p channel) Drain Current ID( ) D(on) VIN-OUT v 0.2 V, VIN = 5 V, VON/OFF = 1.5 V VIN-OUT v 0.3 V, VIN = 3 V, VON/OFF = 1.5 V 1 1 1.8 0.480 0.690 0.950 8 0.600 0.850 1.200 A W V Notes a. Surface Mounted on FR4 Board. b. VIN = 8 V, VON/OFF = 8 V, TA = 25_C. c. Pulse test: pulse width v300 ms, duty cycle v2%. www.vishay.com Document Number: 72534 S-32132—Rev. A, 27-Oct-03 2 Si1867DL New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 2.0 VGS = 5 thru 3 V 1.6 I D − Drain Current (A) 2.5 V I D − Drain Current (A) 1.6 TC = −55_C 2.0 Vishay Siliconix Transfer Characteristics 1.2 2V 1.8 V 1.5 V 1.2 25_C 0.8 0.8 125_C 0.4 0.4 1V 0.0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) 2.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 VGS − Gate-to-Source Voltage (V) 1.5 On-Resistance vs. Drain Current VDROP vs. IL @ VIN = 4.5 V VON/OFF = 1.5 to 8 V r DS(on) − On-Resistance ( W ) 1.6 VGS = 1.8 V 1.2 VGS = 2.5 V 0.8 VGS = 4.5 V 0.4 V DROP (V) 1.2 0.9 TJ = 125_C 0.6 TJ = 25_C 0.3 0.0 0.0 0.4 0.8 1.2 1.6 2.0 0.0 0.0 0.4 0.8 IL − (A) 1.2 1.6 2.0 ID − Drain Current (A) VDROP vs. IL @ VIN = 2.5 V 2.5 VON/OFF = 1.5 to 8 V 2.0 V DROP (V) 1.5 VDROP vs. IL @ VIN = 1.8 V VON/OFF = 1.5 to 8 V 1.2 V DROP (V) 1.5 TJ = 125_C 1.0 TJ = 25_C 0.9 TJ = 125_C 0.6 TJ = 25_C 0.3 0.5 0.0 0.0 0.4 0.8 IL − (A) 1.2 1.6 0.0 0.0 0.2 0.4 0.6 IL − (A) 0.8 1.0 Document Number: 72534 S-32132—Rev. A, 27-Oct-03 www.vishay.com 3 Si1867DL Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 1.6 2.0 On-Resistance vs. Gate-to-Source Voltage r DS(on) − On-Resistance (W ) (Normalized) 1.2 VGS = 4.5 V ID = 0.6 A r DS(on) − On-Resistance ( W ) 1.4 1.6 1.2 ID = 0.2 A 0.8 ID = 0.6 A 1.0 0.8 VGS = 2.5 V ID = 0.5 A 0.6 −50 −25 0 25 50 75 100 125 150 0.4 0.0 0 1 2 3 4 5 TJ − Junction Temperature (_C) VGS − Gate-to-Source Voltage (V) 14 12 10 Time ( mS) 8 6 4 2 0 0 Switching Variation R2 @ VIN = 4.5 V, R1 = 20 kW tf IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF 12 10 8 Time ( mS) 6 4 2 0 Switching Variation R2 @ VIN = 2.5 V, R1 = 20 kW IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF tr tf td(off) tr td(on) td(off) td(on) 2 4 R2 (kW) 6 8 10 0 2 4 R2 (kW) 6 8 10 12 10 8 Time ( mS) Switching Variation R2 @ VIN = 1.8 V, R1 = 20 kW IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF tr 80 Switching Variation R2 @ VIN = 4.5 V, R1 = 300 kW td(off) 64 tf tf Time ( mS) 48 6 4 2 0 0 2 4 R2 (kW) 6 8 32 td(off) 16 td(on) 0 0 IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF tr td(on) 20 40 R2 (kW) 60 80 100 www.vishay.com 4 Document Number: 72534 S-32132—Rev. A, 27-Oct-03 Si1867DL New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 60 50 td(off) 40 Time ( mS) Time ( mS) 30 20 10 0 0 20 40 60 R2 (kW) 80 100 Vishay Siliconix Switching Variation R2 @ VIN = 2.5 V, R1 = 300 kW tf 70 60 50 40 30 20 10 0 0 Switching Variation R2 @ VIN = 1.8 V, R1 = 300 kW IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF tr td(off) tf IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF tr td(on) td(on) 20 40 R2 (kW) 60 80 100 10 Safe Operating Area, Junction-to-Ambient I D − Drain Current (A) 1 Limited by rDS(on) 1 ms 10 ms 100 ms 0.1 1s 10 s dc TA = 25_C Single Pulse 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) 2 1 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA =400_C/W Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Document Number: 72534 S-32132—Rev. A, 27-Oct-03 www.vishay.com 5