Si1900DL
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.480 @ VGS = 10 V 0.700 @ VGS = 4.5 V
ID (A)
0.63 0.52
SOT-363 SC-70 (6-LEADS)
S1 1 6 D1 Marking Code PB G1 2 5 G2 XX YY Lot Traceability and Date Code Part # Code
D2
3
4
S2
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C
Symbol
VDS VGS
5 secs
30 "20 0.63
Steady State
Unit
V
0.59 0.43 1.0 A 0.23 0.27 0.14 -55 to 150 W _C
ID IDM IS PD TJ, Tstg
0.45
0.25 0.30 0.16
THERMAL RESISTANCE RATINGS
Parameter
t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71251 S-21374—Rev. C, 12-Aug-02 www.vishay.com Steady State Steady State RthJA RthJF
Symbol
Typical
360 400 300
Maximum
415 460 350
Unit
_C/W
1
Si1900DL
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 85_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 0.59 A VGS = 4.5 V, ID = 0.2 A VDS = 10 V, ID = 0.59 A IS = 0.23 A, VGS = 0 V 1.0 0.410 0.600 0.75 0.8 1.2 0.480 0.700 S V 1.0 "100 1 5 V nA mA A W
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 0.23 A, di/dt = 100 A/ms VDD = 15 V, RL = 30 W ID ^ 0.5 A, VGEN = 10 V, RG = 6 W VDS = 15 V, VGS = 10 V, ID = 0.59 A 0.86 0.24 0.08 5 8 8 7 15 10 15 15 15 30 ns 1.4 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
1.0 VGS = 10 thru 4 V 0.8 I D - Drain Current (A) I D - Drain Current (A) 0.8 1.0
Transfer Characteristics
0.6
0.6
0.4 3V 0.2
0.4 TC = 125_C 0.2 25_C
-55 _C 2.5 3.0 3.5 4.0
0.0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0 0.0
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
www.vishay.com
2
Document Number: 71251 S-21374—Rev. C, 12-Aug-02
Si1900DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
1.6 r DS(on) - On-Resistance ( W ) 60
Capacitance
50 1.2 C - Capacitance (pF)
Ciss
40
0.8 VGS = 4.5 V VGS = 10 V 0.4
30 Coss
20
10
Crss
0.0 0.0
0 0.2 0.4 0.6 0.8 1.0 0 4 8 12 16 20
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Gate Charge
10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 0.59 A 8 1.8
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 0.59 A
r DS(on) - On-Resistance ( W) (Normalized) 0.4 0.6 0.8 1.0
1.6
1.4
6
1.2
4
1.0
2
0.8
0 0.0
0.2
0.6 -50
-25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
1 1.8
On-Resistance vs. Gate-to-Source Voltage
r DS(on) - On-Resistance ( W )
1.5
I S - Source Current (A)
1.2
ID = 0.59 A
TJ = 150_C
0.9
TJ = 25_C
0.6
0.3
0.1 0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 71251 S-21374—Rev. C, 12-Aug-02
www.vishay.com
3
Si1900DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4 5
Single Pulse Power
0.2 V GS(th) Variance (V)
4 ID = 250 mA Power (W) 3
-0.0
-0.2
2
-0.4
1
-0.6 -50
-25
0
25
50
75
100
125
150
0 10- 3
10- 2
10- 1
1 Time (sec)
10
100
600
TJ - Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2
Notes:
0.1 0.1 0.05 0.02
PDM t1 t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA =400_C/W
t1 t2
Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec)
3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1 Duty Cycle = 0.5
Normalized Effective Transient Thermal Impedance
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10
www.vishay.com
4
Document Number: 71251 S-21374—Rev. C, 12-Aug-02
很抱歉,暂时无法提供与“SI1900DL”相匹配的价格&库存,您可以联系我们找货
免费人工找货