SI1901DL

Si1901DL New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) 3.8 @ VGS = –4.5 V 5.0 @ VGS = –2.5 V ID (mA) –180 –100 SOT-363 SC-70 (6-Leads) Marking Code QD G1 D2 2 3 5 4 G2 S2 XX YY Lot Traceability and Date Code Part # Code S1 1 6 D1 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Drain Current C) Pulsed Drain Current Maximum Power Dissipationa Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM PD TJ, Tstg Limit –20 "8 –180 –140 –500 0.20 0.13 –55 to 150 Unit V mA A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Symbol RthJA Limit 625 Unit _C/W Document Number: 71304 S-01886—Rev. A, 28-Aug-00 www.vishay.com 1 Si1901DL Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VDS = 0 V, ID = –10 mA VDS = VGS, ID = –50 mA VDS = 0 V, VGS = "8 V VDS = –20 V, VGS = 0 V VDS = –20 V, VGS = 0 V, TJ = 55_C VGS v –4.5 V, VDS = –8.0 V VGS v –2.5 V, VDS = –5.0 V VGS = –4.5 V, ID = –180 mA rDS( ) DS(on) gfs VSD VGS = –2.5 V, ID = –400 mA –120 2.6 4.0 200 –0.7 –1.2 3.8 5.0 W mS V –20 –0.4 –24 V –0.9 "2 –0.001 –1.5 "100 –100 –1 mA nA Symbol Test Condition Min Typ Max Unit On-State Drain Currenta Drain Current ID(on) Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea –75 mA VDS = –2.5 V, ID = –50 mA IS = –50 mA, VGS = 0 V Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss MHz VDS = –5.0 V, VGS = 0 V, f = 1 MH 50 V VDS = –5.0 V, VGS = –4 5 V ID = –100 mA 50V 4.5 V, A 350 25 125 20 14 5 pF F 450 pC C Switchingb, c Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf VDD = –3 0 V, RL = 100 W 3.0 V, 100 ID = –0.25 A, VGEN = –4 5 V RG = 10 W 0 25 A 4.5 V, 10 7 25 19 9 12 35 ns 30 15 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. For design only, not subject to production testing. c. Switching time is essentially independent of operating temperature. www.vishay.com 2 Document Number: 71304 S-01886—Rev. A, 28-Aug-00 Si1901DL New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 1.2 5V 0.4 4.5 V 0.8 4V 3.5 V 3V 2.5 V 2V 0 0 1 2 3 4 0 0 0.5 1.0 1.5 2.0 2.5 3.0 I D – Drain Current (A) 25_C 0.3 125_C 0.5 TC = –55_C Vishay Siliconix Transfer Characteristics 1.0 I D – Drain Current (A) 0.6 0.2 0.4 0.2 0.1 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 8 45 Capacitance r DS(on) – On-Resistance ( W ) 36 C – Capacitance (pF) 6 VGS = 2.5 V 4 VGS = 4.5 V 2 27 Ciss 18 Coss 9 Crss 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0 3 6 9 12 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) 10 V GS – Gate-to-Source Voltage (V) VDS = 6 V ID = 80 mA Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 180 m A 6 r DS(on) – On-Resistance (W ) (Normalized) 200 300 400 500 600 8 1.4 1.2 4 1.0 2 0.8 0 0 100 0.6 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (pC) TJ – Junction Temperature (_C) Document Number: 71304 S-01886—Rev. A, 28-Aug-00 www.vishay.com 3 Si1901DL Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 1 TJ = 150_C r DS(on) – On-Resistance ( W ) I S – Source Current (A) 6 On-Resistance vs. Gate-to-Source Voltage 5 0.1 4 ID = 180 mA 3 0.01 TJ = 25_C 2 1 0.001 0.00 0.5 01 1.5 0 1 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.3 ID = 50 mA 0.2 V GS(th) Variance (V) 0.1 0.0 –0.1 –0.2 –50 –25 0 25 50 75 100 125 150 TJ – Temperature (_C) www.vishay.com 4 Document Number: 71304 S-01886—Rev. A, 28-Aug-00