SI1902DL

Si1902DL Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.385 @ VGS = 4.5 V 0.630 @ VGS = 2.5 V ID (A) 0.70 0.54 SOT-363 SC-70 (6-LEADS) S1 1 6 D1 Marking Code PA G1 2 5 G2 XX YY Lot Traceability and Date Code Part # Code D2 3 4 S2 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS 5 secs 20 "12 0.70 Steady State Unit V 0.66 0.48 1.0 A 0.23 0.27 0.14 -55 to 150 W _C ID IDM IS PD TJ, Tstg 0.50 0.25 0.30 0.16 THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71080 S-21374—Rev. E, 12-Aug-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 360 400 300 Maximum 415 460 350 Unit _C/W 1 Si1902DL Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 85_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 0.66 A VGS = 2.5 V, ID = 0.40 A VDS = 10 V, ID = 0.66 A IS = 0.23 A, VGS = 0 V 1.0 0.320 0.560 1.5 0.8 1.2 0.385 0.630 S V 0.6 1.5 "100 1 5 V nA mA A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 0.23 A, di/dt = 100 A/ms VDD = 10 V, RL = 20 W ID ^ 0.5 A, VGEN = 4.5 V, RG = 6 W VDS = 10 V, VGS = 4.5 V, ID = 0.66 A 0.8 0.06 0.30 10 16 10 10 20 20 30 20 20 40 ns 1.2 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 1.0 VGS = 5 thru 2.5 V 0.8 I D - Drain Current (A) I D - Drain Current (A) 2V 0.6 0.8 1.0 Transfer Characteristics 0.6 0.4 0.4 TC = 125_C 0.2 25_C 0.2 1.5 V 1V -55 _C 1.5 2.0 2.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.0 0.5 1.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71080 S-21374—Rev. E, 12-Aug-02 Si1902DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 1.0 r DS(on) - On-Resistance ( W ) 100 Capacitance C - Capacitance (pF) 0.8 80 Ciss 60 0.6 VGS = 2.5 V 0.4 VGS = 4.5 V 40 Coss 0.2 20 Crss 0.0 0.0 0 0.2 0.4 0.6 0.8 1.0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 0.66 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 0.66 A 1.4 3 r DS(on) - On-Resistance ( W) (Normalized) 0.4 0.6 0.8 1.2 2 1.0 1 0.8 0 0.0 0.2 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 1 1.0 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 0.8 ID = 0.66 A I S - Source Current (A) TJ = 150_C 0.6 0.4 TJ = 25_C 0.2 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71080 S-21374—Rev. E, 12-Aug-02 www.vishay.com 3 Si1902DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.2 5 Single Pulse Power 0.1 V GS(th) Variance (V) ID = 250 mA -0.0 Power (W) 4 3 -0.1 2 -0.2 1 -0.3 -0.4 -50 -25 0 25 50 75 100 125 150 0 10- 3 10- 2 10- 1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA =400_C/W t1 t2 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71080 S-21374—Rev. E, 12-Aug-02