SI1905DL

Si1905DL New Product Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.600 @ VGS = –4.5 V –8 8 0.850 @ VGS = –2.5 V 1.200 @ VGS = –1.8 V ID (A) "0.60 "0.50 "0.42 SOT-363 SC-70 (6-LEADS) S1 1 6 D1 Marking Code QB G1 2 5 G2 XX YY Lot Traceability and Date Code Part # Code D2 3 4 S2 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Drain Current C) Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C ID IDM IS PD TJ, Tstg –0.25 0.30 0.16 –55 to 150 Symbol VDS VGS 5 secs –8 Steady State Unit V "8 "0.60 "0.43 "1.0 –0.23 0.27 "0.57 "0.41 A W 0.14 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71082 S-99188—Rev. A, 01-Nov-99 www.vishay.com S FaxBack 408-970-5600 t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 360 400 300 Maximum 415 460 350 Unit _C/W 2-1 Si1905DL Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "8 V VDS = –6.4 V, VGS = 0 V VDS = –6.4 V, VGS = 0 V, TJ = 85_C VDS = –5 V, VGS = –4.5 V VGS = –4.5 V, ID = –0.57 A Drain-Source On-State Resistancea DiS OS Ri rDS(on) VGS = –2.5 V, ID = –0.48 A VGS = –1.8 V, ID = –0.20 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = –10 V, ID = –0.57 A IS = –0.23 A, VGS = 0 V –1.0 0.51 0.720 1.0 1.2 –0.8 –1.2 0.600 0.850 1.200 S V W –0.45 "100 –1 –5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = –0.23 A, di/dt = 100 A/ms VDD = –4 V, RL = 8 W V, ID ^ –0.5 A, VGEN = –4 5 V RG = 6 W 05A 4.5 V, VDS = –4 V, VGS = –4 5 V ID = –0 57 A V 4.5 V, 0.57 1.5 0.17 0.16 6 25 10 10 20 12 50 20 20 40 ns 2.3 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 1.0 VGS = 5 thru 2.5 V 0.8 I D – Drain Current (A) I D – Drain Current (A) 2V 0.8 1.0 Transfer Characteristics TC = –55_C 25_C 125_C 0.6 0.6 1.5 V 0.4 0.4 0.2 1V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0.2 0 0 0.5 1.0 1.5 2.0 2.5 VDS – Drain-to-Source Voltage (V) www.vishay.com S FaxBack 408-970-5600 VGS – Gate-to-Source Voltage (V) Document Number: 71082 S-99188—Rev. A, 01-Nov-99 2-2 Si1905DL New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 2.0 r DS(on) – On-Resistance ( W ) 160 Vishay Siliconix Capacitance 1.5 C – Capacitance (pF) VGS = 1.8 V 120 Ciss 1.0 VGS = 2.5 V VGS = 4.5 V 80 Coss 40 Crss 0.5 0 0 0.2 0.4 0.6 0.8 1.0 0 0 2 4 6 8 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 5 V GS – Gate-to-Source Voltage (V) VDS = 4 V ID = 0.57 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 0.57 A 1.4 3 r DS(on) – On-Resistance (W) (Normalized) 0.6 0.8 1.0 1.2 1.4 1.6 1.2 2 1.0 1 0.8 0 0 0.2 0.4 Qg – Total Gate Charge (nC) 0.6 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage 1 2.0 On-Resistance vs. Gate-to-Source Voltage r DS(on) – On-Resistance ( W ) I S – Source Current (A) 1.5 ID = 0.57 A 1.0 TJ = 150_C TJ = 25_C 0.5 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD – Source-to-Drain Voltage (V) 0 0 1 2 3 4 5 VGS – Gate-to-Source Voltage (V) Document Number: 71082 S-99188—Rev. A, 01-Nov-99 www.vishay.com S FaxBack 408-970-5600 2-3 Si1905DL Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 50 Single Pulse Power 0.3 V GS(th) Variance (V) ID = 250 mA 0.2 Power (W) 40 30 0.1 20 0.0 10 –0.1 –0.2 –50 –25 0 25 50 75 100 125 150 0 10–3 10–2 10–1 1 Time (sec) 10 100 600 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA =400_C/W Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 71082 S-99188—Rev. A, 01-Nov-99