SI1917EDH_08

Si1917EDH New Product Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.370 @ VGS = –4.5 V –12 0.575 @ VGS = –2.5 V 0.800 @ VGS = –1.8 V ID (A) –1.15 –0.92 –0.78 D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 3000 V D Thermally Enhanced SC-70 Package APPLICATIONS D Load Switching D PA Switch D Level Switch D D SOT-363 SC-70 (6-LEADS) S1 1 6 D1 Marking Code DB G2 XX YY 3 kW G Lot Traceability and Date Code Part # Code G 3 kW G1 2 5 D2 3 4 S2 Top View S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID –0.83 IDM IS –0.61 0.73 0.38 –55 to 150 –3 –0.47 0.57 0.30 W _C –0.73 A Symbol VDS VGS 5 secs Steady State –12 "12 Unit V –1.15 –1.00 THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71414 S-03174—Rev. A, 07-Mar-01 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 130 170 80 Maximum 170 220 100 Unit _C/W 1 Si1917EDH Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) IGSS VDS = VGS, ID = –100 mA VDS = 0 V, VGS = "4.5 V Gate-Body Leakage VDS = 0 V, VGS = "12 V VDS = –9.6 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ID(on) VDS = –9.6 V, VGS = 0 V, TJ = 85_C VDS = –5 V, VGS = –4.5 V VGS = –4.5 V, ID = –1.0 A Drain-Source On-State Resistancea rDS(on) VGS = –2.5 V, ID = –0.81 A VGS = –1.8 V, ID = –0.2 A Forward Transconductancea gfs VSD VDS = –10 V, ID = –1.0 A IS = –0.47 A, VGS = 0 V –2 0.300 0.470 0.660 1.7 –0.85 –1.2 0.370 0.575 0.800 S V W –0.45 "1.5 "10 –1 –5 V mA mA mA A Symbol Test Condition Min Typ Max Unit Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = –6 V, RL = 12 W ID ^ –0.5 A, VGEN = –4.5 V, RG = 6 W VDS = –6 V, VGS = –4.5 V, ID = –1.0 A 1.3 0.31 0.31 0.17 0.47 0.96 1.0 0.26 0.71 1.4 1.5 ms 2.0 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate-Current vs. Gate-Source Voltage 10 10,000 1,000 I GSS – Gate Current (mA) 8 I GSS – Gate Current (m A) 100 10 1 0.1 TJ = 25_C 0.01 0 0 4 8 12 16 0.001 0 3 6 9 12 15 TJ = 150_C Gate Current vs. Gate-Source Voltage 6 4 2 VGS – Gate-to-Source Voltage (V) www.vishay.com VGS – Gate-to-Source Voltage (V) Document Number: 71414 S-03174—Rev. A, 07-Mar-01 2 Si1917EDH New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 3.0 VGS = 5 thru 3 V 2.5 2.5 V I D – Drain Current (A) 2.5 3.0 TC = –55_C 25_C Vishay Siliconix Transfer Characteristics I D – Drain Current (A) 2.0 2.0 125_C 1.5 2V 1.5 1.0 1.5 V 1.0 0.5 0.5 0.0 0 1 2 3 4 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 1.2 VGS = 1.8 V C – Capacitance (pF) 0.9 200 Capacitance r DS(on) – On-Resistance ( W ) 160 Ciss 120 VGS = 2.5 V 0.6 80 Coss 40 Crss VGS = 4.5 V 0.3 0.0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 12 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 5 V GS – Gate-to-Source Voltage (V) VDS = 6 V ID = –1.0 A 1.6 On-Resistance vs. Junction Temperature 3 r DS(on) – On-Resistance (W ) (Normalized) 4 1.4 VGS = 4.5 V ID = –1.0 A 1.2 2 1.0 1 0.8 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.6 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Document Number: 71414 S-03174—Rev. A, 07-Mar-01 www.vishay.com 3 Si1917EDH Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 3 2.0 On-Resistance vs. Gate-to-Source Voltage 1 r DS(on) – On-Resistance ( W ) TJ = 150_C I S – Source Current (A) 1.6 1.2 ID = –1.0 A 0.8 TJ = 25_C 0.4 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0 1 2 3 4 5 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.3 ID = 100 mA 0.2 V GS(th) Variance (V) 5 Single Pulse Power, Junction-to-Ambient 4 0.1 Power (W) 3 0.0 2 –0.1 1 –0.2 –50 –25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 600 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 2. Per Unit Base = RthJA = 170_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71414 S-03174—Rev. A, 07-Mar-01 Si1917EDH New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71414 S-03174—Rev. A, 07-Mar-01 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1