SI1958DH

New Product Si1958DH Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) 0.205 at VGS = 4.5 V 0.340 at VGS = 2.5 V ID (A)a 1.3a 1.3a Qg (Typ) 1.2 nC FEATURES • TrenchFET® Power MOSFET APPLICATIONS • Load Switch for Portable Applications RoHS COMPLIANT SOT-363 SC-70 (6-LEADS) S1 1 6 D1 Marking Code CC XX YY G1 2 5 G2 D1 D2 G1 Lot Traceability and Date Code G2 D2 3 4 S2 Part # Code S1 Top View Ordering Information: Si1958DH-T1-E3 (Lead (Pb)-free) S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit 20 ± 12 1.3a 1.3a 1.3a 1.2a 4 1.0 0.61c 1.25 0.8 0.74b, c 0.47b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) A Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS Parameter t ≤ 5 sec Maximum Junction-to-Ambientb, f Steady State Maximum Junction-to-Foot (Drain) Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 5 sec. d. Maximum under Steady State conditions is 220 °C/W. Symbol RthJA RthJF Typical 130 80 Maximum 170 100 Unit °C/W Document Number: 74340 S-70532-Rev. B, 26-Mar-07 www.vishay.com 1 New Product Si1958DH Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic b Symbol VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tr IS ISM VSD trr Qrr ta tb Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 12 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 °C VDS ≤ 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 1.3 A VGS = 2.5 V, ID = 0.29 A VDS = 4 V, ID = 1.3 A Min 20 Typ Max Unit V 18.5 - 3.2 0.6 1.6 ± 100 1 10 4 0.165 0.275 5.5 0.205 0.340 mV/°C V ns µA A Ω S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time 105 VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 10 V, ID = 1.5 A VDS = 10 V, VGS = 4.5 V, ID = 1.6 A f = 1 MHz VDD = 10 V, RL = 8.3 Ω ID ≅ 1.2 A, VGEN = 4.5 V, Rg = 1 Ω 26 15 2.5 1.2 0.4 0.3 4 8 25 10 10 5 VDD = 10 V, RL = 8.3 Ω ID ≅ 1.2 A, VGEN = 10 V, Rg = 1 Ω 10 10 8 TC = 25 °C IS = 1.2 A, VGS = 0 V 0.85 20 IF = 1.2 A, di/dt = 100 A/µs, TJ = 25 °C 15 16 4 12 40 15 15 10 15 15 15 1 4 1.2 40 30 ns Ω 3.8 1.8 nC pF A V ns nC ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74340 S-70532-Rev. B, 26-Mar-07 New Product Si1958DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4 VGS = 10 V thru 3.5 V VGS = 3 V 3 I D - Drain Current (A) I D - Drain Current (A) 0.6 0.8 1.0 2 VGS = 2.5 V 0.4 TC = 25 °C 0.2 TC = 125 °C TC = - 55 °C 0.5 1.0 1.5 2.0 2.5 1 VGS = 2 V VGS = 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.5 160 Transfer Characteristics rDS(on) - On-Resistance (Ω) 0.4 C - Capacitance (pF) 120 Ciss 0.3 VGS = 2.5 V 0.2 VGS = 4.5 V 0.1 80 40 Coss Crss 0 4 8 12 16 20 0.0 0 1 2 ID - Drain Current (A) 3 4 0 VDS - Drain-Source Voltage (V) On-Resistance vs. Drain Current 10 ID = 1.5 A VGS - Gate-to-Source Voltage (V) 8 VDS = 10 V rDS(on) – On-Resistance (Normalized) 1.4 6 1.6 1.8 Capacitance VGS = 4.5 V, 2.5 V ID = 1.3 A 1.2 4 VDS = 16 V 1.0 2 0.8 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge Document Number: 74340 S-70532-Rev. B, 26-Mar-07 On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si1958DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 0.50 0.45 rDS(on) - On-Resistance (Ω) TJ = 150 °C I S − Source Current (A) 0.40 0.35 0.30 0.25 0.20 0.15 0.1 0 0.2 0.4 0.6 0.8 1 1.2 0.10 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) TA = 25 °C TA = 125 °C ID = 1.3 A TJ = 25 °C 1 VSD − Source-to-Drain Voltage (V) Forward Diode Voltage 1.4 1.3 1.2 ID = 250 µA 1.1 1.0 0.9 1 0.8 0.7 - 50 0 0.01 Power (W) 3 5 On-Resistance vs. Gate-Source Voltage 4 V GS(th) Variance (V) 2 - 25 0 25 50 75 100 125 150 0.1 1 Time (sec) 10 100 600 TJ - Temperature (°C) Threshold Voltage 10 *Limited by rDS(on) ID(on) Limited I D – Drain Current (A) 1 1 ms 10 ms 0.1 100 ms 1s 10 s DC BVDSS Limited 10 100 IDM Limited 100 µs Single Pulse Power T A = 25 °C Single Pulsed 0.01 0.1 *VGS 1 VDS – Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Case www.vishay.com 4 Document Number: 74340 S-70532-Rev. B, 26-Mar-07 New Product Si1958DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.5 1.4 1.2 2.0 ID - Drain Current (A) Power Dissipation (W) 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 0.0 25 50 75 100 125 150 1.5 Package Limited 1.0 0.5 TC - Case Temperature (°C) T C - Case Temperature (°C) Current Derating* Power Derating *The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 2. Per Unit Base = RthJA = 170 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Document Number: 74340 S-70532-Rev. B, 26-Mar-07 www.vishay.com 5 New Product Si1958DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74340. www.vishay.com 6 Document Number: 74340 S-70532-Rev. B, 26-Mar-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1