SI1972DH_10

Si1972DH Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.190 at VGS = 10 V 0.344 at VGS = 4.5 V ID (A)a 1.3 1.3 Qg (Typ.) 0.91 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS SOT-363 SC-70 (6-LEADS) • Load Switch for Portable Applications 6 D1 Marking Code CE XX YY D1 D2 S1 1 G1 2 5 G2 D2 3 4 S2 Lot Traceability and Date Code Part # Code G1 G2 Top View Ordering Information: Si1972DH-T1-E3 (Lead (Pb)-free) Si1972DH-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit 30 ± 20 1.3a 1.3a 1.3a 1.2 4 1.0 0.61c 1.25 0.8 0.74b, c 0.47b, c - 55 to 150 260 °C W A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Foot (Drain) Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 220 °C/W. Document Number: 74398 S10-0721-Rev. B, 29-Mar-10 www.vishay.com 1 t≤5s Steady State Symbol RthJA RthJF Typical 130 80 Maximum 170 100 Unit °C/W Si1972DH Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = 1.2 A, dI/dt = 100 A/µs, TJ = 25 °C IS = 1.2 A, VGS = 0 V 0.85 20 18 16 4 TC = 25 °C 1 4 1.2 40 36 A V ns nC ns Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tr VDD = 15 V, RL = 12.5 Ω ID ≅ 1.2 A, VGEN = 10 V, Rg = 1 Ω VDD = 15 V, RL = 12.5 Ω ID ≅ 1.2 A, VGEN = 4.5 V, Rg = 1 Ω f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 1.3 A VDS = 15 V, VGS = 4.5 V, ID = 1.3 A VDS = 15 V, VGS = 0 V, f = 1 MHz 75 18 6 1.85 0.91 0.51 0.3 4.5 15 50 7 15 5 10 10 6 25 75 15 25 10 15 15 12 ns Ω 2.8 1.4 nC pF VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 °C VDS ≤ 5 V, VGS = 10 V VGS = 10 V, ID = 1.3 A VGS = 4.5 V, ID = 0.29 A VDS = 15 V, ID = 1.3 A 4 0.155 0.278 1.4 0.225 0.340 1.5 30 23.5 - 4.6 2.8 ± 100 1 10 V mV/°C V ns µA A Ω S Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74398 S10-0721-Rev. B, 29-Mar-10 Si1972DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4 VGS = 10 V thru 5 V 0.8 I D - Drain Current (A) I D - Drain Current (A) 3 TC = 125 °C 0.6 1.0 2 4V 1 0.4 TC = 25 °C TC = - 55 °C 0.2 3V 0 0.0 0.0 0.4 0.8 1.2 1.6 2.0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.6 100 Transfer Characteristics 0.5 R DS(on) - On-Resistance (Ω) VGS = 4.5 V 0.4 C - Capacitance (pF) 80 Ciss 60 0.3 40 Coss 0.2 VGS = 10 V 0.1 20 Crss 0 0 1 2 ID - Drain Current (A) 3 4 0 5 10 0.0 15 20 25 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 I D = 1.3 A VGS - Gate-to-Source Voltage (V) 8 RDS(on) - On-Resistance 1.6 1.8 Capacitance VGS = 10 V and 4.5 V, I D = 1.3 A 1.4 (Normalized) 6 VDS = 15 V 4 VDS = 24 V 1.2 1.0 2 0.8 0 0.0 0.5 1.0 1.5 2.0 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge Document Number: 74398 S10-0721-Rev. B, 29-Mar-10 On-Resistance vs. Junction Temperature www.vishay.com 3 Si1972DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 0.6 ID = 1.3 A 0.5 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.4 125 °C 0.3 TJ = 150 °C 1 0.2 25 °C 0.1 TJ = 25 °C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Forward Diode Voltage 2.6 2.5 2.4 2.3 Power (W) VGS(th) (V) 2.2 2.1 2.0 1.9 1.8 1.7 1.6 - 50 - 25 0 25 50 75 100 125 150 0 0.01 1 ID = 250 µA 3 4 5 On-Resistance vs. Gate-Source Voltage 2 0.1 1 Time (s) 10 100 600 TJ - Temperature (°C) Threshold Voltage Single Pulse Power 10 Limited by R DS(on)* 100 µs I D - Drain Current (A) 1 1 ms 10 ms 100 ms BVDSS Limited 0.01 0.1 * VGS 1 s, 10 s DC 0.1 TA = 25 °C Single Pulse 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 74398 S10-0721-Rev. B, 29-Mar-10 Si1972DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.4 1.4 1.2 Power Dissipation (W) 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 25 50 75 100 125 150 2.0 I D - Drain Current (A) 1.6 Package Limited 1.2 0.8 0.4 0.0 TC - Case Temperature (°C) T C - Case Temperature (°C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74398 S10-0721-Rev. B, 29-Mar-10 www.vishay.com 5 Si1972DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwiese noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 P DM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 2. Per Unit Base = RthJA = 170 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74398. www.vishay.com 6 Document Number: 74398 S10-0721-Rev. B, 29-Mar-10 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1