SI1988DH-T1-E3

Si1988DH New Product Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.168 at VGS = 4.5 V 20 0.200 at VGS = 2.5 V 0.250 at VGS = 1.8 V ID (A)a 1.3a 1.3a 1.3 a FEATURES Qg (Typ) • TrenchFET® Power MOSFET APPLICATIONS 1.6 nC RoHS COMPLIANT • Load Switch for Portable Applications SOT-363 SC-70 (6-LEADS) D1 S1 1 6 D1 Marking Code CF XX YY G1 2 5 G2 D2 D2 3 4 S2 Lot Traceability and Date Code Part # Code G1 G2 Top View Ordering Information: Si1988DH-T1-E3 (Lead (Pb)-free) S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C d, e Symbol VDS VGS ID IDM IS Limit 20 ±8 1.3a 1.3a 1.3a, b, c 1.3a, b, c 4 1.0 0.61b, c 1.25 0.8 0.74b, c 0.47b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) A Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 5 sec. d. Maximum under Steady State conditions is 220 °C/W. b, f t ≤ 5 sec Steady State Symbol RthJA RthJF Typical 130 80 Maximum 170 100 Unit °C/W Document Number: 74296 S-62109-Rev. A, 23-Oct-06 www.vishay.com 1 Si1988DH Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic b Symbol VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tr IS ISM VSD trr Qrr ta tb Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 °C VDS ≤ 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 1.4 A VGS = 2.5 V, ID = 1.3 A VGS = 1.8 V, ID = 0.4 A VDS = 4 V, ID = 1.4 A Min 20 Typ Max Unit V 19.7 - 2.4 0.4 1 ± 100 1 10 4 0.139 0.165 0.205 4 0.168 0.200 0.250 mV/°C V ns µA A Ω S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time 110 VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 8 V, ID = 1.6 A VDS = 10 V, VGS = 4.5 V, ID = 1.6 A f = 1 MHz VDD = 10 V, RL = 7.7 Ω ID ≅ 1.3 A, VGEN = 4.5 V, Rg = 1 Ω 25 11 2.7 1.6 0.3 0.25 4 8 20 15 10 5 VDD = 10 V, RL = 7.7 Ω ID ≅ 1.3 A, VGEN = 8 V, Rg = 1 Ω 11 10 6 TC = 25 °C IS = 1.3 A, VGS = 0 V 0.8 20 IF = 1.3 A, di/dt = 100 A/µs, TJ = 25 °C 20 16 4 12 30 25 15 10 20 15 10 1 4 1.2 40 40 ns Ω 4.1 2.4 nC pF A V ns nC ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74296 S-62109-Rev. A, 23-Oct-06 Si1988DH Vishay Siliconix TYPICAL CHARACTERISTICS 4 25 °C, unless noted 1.0 I D – Drain Current (A) 3 I D – Drain Current (A) VGS = 5 thru 2 V 0.8 TC = - 55 °C 0.6 TC = 25 °C 0.4 2 VGS = 1.5 V 1 0.2 VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.0 0.3 0.6 0.9 1.2 1.5 TC = 125 °C VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Output Characteristics 0.400 rDS(on) – Drain-to-Source On-Resistance (Ω) 160 Transfer Characteristics 0.350 C – Capacitance (pF) 120 Ciss 0.300 VGS = 1.8 V 0.250 80 0.200 VGS = 2.5 V 0.150 VGS = 4.5 V 0.100 0 1 2 3 4 40 Coss Crss 0 4 8 12 16 20 0 VGS – Gate-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 8 ID = 1.6 A V GS – Gate-to-Source Voltage (V) 7 rDS(on) – On-Resi stance (Normalized) 6 5 4 3 2 1 0 0.0 VDS = 16 V VDS = 10 V 1.60 1.80 Capacitance 1.40 ID = 1.6 A VGS = 1.8, 2.5, 4.5 V 1.20 1.00 0.80 0.5 1.0 1.5 2.0 2.5 3.0 0.60 - 50 - 25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (°C) Gate Charge Document Number: 74296 S-62109-Rev. A, 23-Oct-06 On-Resistance vs. Junction Temperature www.vishay.com 3 Si1988DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 10 rDS(on) – Drain-to-Source On-Resistance (Ω) 0.400 ID = 1.4 A 0.350 I S − Source Current (A) 0.300 TJ = - 150 °C 1 0.250 TJ = 125 °C TJ = - 25 °C 0.200 TJ = 25 °C 0.150 0.100 0 1 0.2 0.4 VSD − Source-to-Drain Voltage (V) 0.6 0.8 1.2 0.100 0 1 2 3 4 5 VGS – Gate-to-Source Voltage (V) Forward Diode Voltage 0.9 5 On-Resistance vs. Gate-Source Voltage 0.8 4 0.7 VGS(th) (V) ID = 250 µA 0.6 Power (W) 3 2 0.5 1 0.4 0.3 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 600 TJ – Temperature (°C) Threshold Voltage 10 *Limited by rDS(on) 100 µs I D – Drain Current (A) 1 1s 10 ms 0.1 T A = 25 °C Single Pulsed 100 ms 1 ms 10 s DC BVDSS Limited 0.1 1 10 Single Pulse Power 0.01 100 VDS – Drain-to-Source Voltage (V) *VGS minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Case www.vishay.com 4 Document Number: 74296 S-62109-Rev. A, 23-Oct-06 Si1988DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 2.5 1.4 1.2 2.0 Power Dissipation (W) 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 0.0 25 50 75 100 125 150 ID – Drain Current (A) 1.5 1.0 Package Limited 0.5 TC – Case Temperature (°C) TC – Case Temperature (°C) Current Derating* Power Derating *The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.2 0.2 0.2 0.1 0.1 0.05 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 0.02 Single Pulse 0.01 10-4 10- 3 10-2 10-1 1 Square Wave Pulse Duration (sec) 2. Per Unit Base = RthJA = 170 °C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Document Number: 74296 S-62109-Rev. A, 23-Oct-06 www.vishay.com 5 Si1988DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74296. www.vishay.com 6 Document Number: 74296 S-62109-Rev. 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The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1