SI2301ADS

Si2301ADS New Product Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) 0.130 @ VGS = –4.5 V 0.190 @ VGS = –2.5 V ID (A)b –2.0 –1.6 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2301DS (1A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C PD TJ, Tstg TA= 25_C TA= 70_C ID IDM IS –0.75 0.9 0.57 –55 to 150 Symbol VDS VGS 5 sec –20 "8 –2.0 –1.6 –10 Steady State Unit V –1.75 –1.4 A –0.6 0.7 0.45 W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 71835 S-20617—Rev. B, 29-Apr-02 www.vishay.com RthJA Symbol Typical 115 140 Maximum 140 175 Unit _C/W 1 Si2301ADS Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = –250 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "8 V VDS = –16 V, VGS = 0 V VDS = –16 V, VGS = 0 V, TJ = 55_C VDS v –5 V, VGS = –4.5 V ID(on) VDS v –5 V, VGS = –2.5 V VGS = –4.5 V, ID = –2.8 A rDS(on) gfs VSD VGS = –2.5 V, ID = –2.0 A VDS = –5 V, ID = –2.8 A IS = –0.75 A, VGS = 0 V –6 –3 0.093 0.140 6.5 –0.80 –1.2 0.130 0.190 W S V A –20 –0.45 –0.95 "100 –1 –10 mA V nA Symbol Test Conditions Min Typ Max Unit On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = –6 V, VGS = 0, f = 1 MHz VDS = –6 V, VGS = –4.5 V ID ^ –2.8 A 4.2 0.8 0.8 500 115 62 pF 10 nC Switchingc td(on) Turn-On Time tr td(off) tf Notes a. Pulse test: PW v300 ms duty cycle v2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. S FaxBack 408-970-5600 VDD = –6 V, RL = 6 W ID ^ –1.0 A, VGEN = –4.5 V RG = 6 W 6 30 25 10 25 60 ns 70 60 Turn-Off Time www.vishay.com 2 Document Number: 71835 S-20617—Rev. B, 29-Apr-02 Si2301ADS New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 10 Vishay Siliconix Output Characteristics VGS = 5, 4.5, 4, 3.5, 3 V 10 Transfer Characteristics 8 I D – Drain Current (A) 2.5 V I D – Drain Current (A) 8 TC = –55_C 25_C 6 125_C 6 4 2V 4 2 0, 0.5, 1 V 2 1.5 V 0 0.0 0 0 1 2 3 4 5 0.5 1.0 1.5 2.0 2.5 3.0 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.6 800 Capacitance 0.5 r DS(on)– On-Resistance ( W ) C – Capacitance (pF) 600 Ciss 0.4 0.3 VGS = 2.5 V VGS = 4.5 V 0.1 400 0.2 200 Coss Crss 0.0 0 2 4 6 8 10 0 0 4 8 12 16 20 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) 5 VDS = 10 V ID = 3.6 A V GS – Gate-to-Source Voltage (V) 4 Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 3.6 A 1.4 r DS(on)– On-Resistance ( W ) (Normalized) 0 1 2 3 4 5 3 1.2 2 1.0 1 0.8 0 0.6 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Document Number: 71835 S-20617—Rev. B, 29-Apr-02 www.vishay.com 3 Si2301ADS Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 0.6 On-Resistance vs. Gate-to-Source Voltage 0.5 1 I S – Source Current (A) TJ = 150_C r DS(on)– On-Resistance ( W ) 0.4 ID = 3.6 A 0.1 TJ = 25_C 0.3 0.2 0.01 0.1 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0 2 4 6 8 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.4 10 Single Pulse Power 0.3 8 V GS(th) Variance (V) 0.2 ID = 250 mA 0.1 Power (W) 6 4 0.0 2 –0.1 –0.2 –50 –25 0 25 50 75 100 125 150 0 0.01 0.10 1.00 10.00 100.00 1000.00 TJ – Temperature (_C) Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 10–4 10–3 10–2 10–1 1 4. Surface Mounted 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com Document Number: 71835 S-20617—Rev. B, 29-Apr-02 4