SI2301BDS-T1

Si2301BDS Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) 0.100 @ VGS = - 4.5 V 0.150 @ VGS = - 2.5 V ID (A)b - 2.4 - 2.0 TO-236 (SOT-23) G 1 3 D Ordering Information: Si2301BDS-T1 S 2 Top View Si2301 BDS (L1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 sec - 20 "8 - 2.4 - 1.9 - 10 - 0.72 0.9 0.57 Steady State Unit V - 2.2 - 1.8 A - 0.6 0.7 0.45 - 55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72066 S-31990—Rev. B, 13-Oct-03 www.vishay.com RthJA Symbol Typical 120 140 Maximum 145 175 Unit _C/W 1 Si2301BDS Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = - 250 mA VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "8 V VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ = 55_C VDS v - 5 V, VGS = - 4.5 V VDS v - 5 V, VGS = - 2.5 V VGS = - 4.5 V, ID = - 2.8 A VGS = - 2.5 V, ID = - 2.0 A VDS = - 5 V, ID = - 2.8 A IS = - 0.75 A, VGS = 0 V -6 -3 0.080 0.110 6.5 - 0.80 - 1.2 0.100 0.150 - 20 - 0.45 - 0.95 "100 -1 - 10 V nA mA Symbol Test Conditions Min Typ Max Unit On-State On State Drain Currenta ID( ) D(on) A Drain-Source On-Resistance Drain Source On Resistancea Forward Transconductancea Diode Forward Voltage rDS( ) DS(on) gfs VSD W S V Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = - 6 V, VGS = 0, f = 1 MHz VDS = - 6 V, VGS = - 4.5 V ID ^ - 2.8 A 2.8 4.5 0.7 1.1 375 95 65 pF 10 nC Switchingc Turn-On Turn On Time td(on) tr td(off) tf VDD = - 6 V, RL = 6 W ID ^ - 1.0 A, VGEN = - 4.5 V 45 RG = 6 W 20 40 30 20 30 60 45 30 ns TurnTurn-Off Time Time Notes a. Pulse test: PW v300 ms duty cycle v2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. S FaxBack 408-970-5600 www.vishay.com 2 Document Number: 72066 S-31990—Rev. B, 13-Oct-03 Si2301BDS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 10 Output Characteristics 10 Transfer Characteristics 8 I D - Drain Current (A) VGS = 5 thru 2.5 V I D - Drain Current (A) 8 2V TC = - 55_C 6 6 25_C 125_C 4 1.5 V 2 1V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) 0.5 On-Resistance vs. Drain Current 800 Capacitance r DS(on)- On-Resistance ( W ) 0.4 C - Capacitance (pF) 600 0.3 400 Ciss 0.2 VGS = 2.5 V 0.1 VGS = 4.5 V 0.0 0 2 4 6 8 10 ID - Drain Current (A) 200 Coss Crss 0 4 8 12 16 20 0 VDS - Drain-to-Source Voltage (V) 5 VDS = 10 V ID = 2.8 A V GS - Gate-to-Source Voltage (V) 4 Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 2.8 A 1.4 r DS(on)- On-Resistance ( W ) (Normalized) 0 1 2 3 4 5 3 1.2 2 1.0 1 0.8 0 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 72066 S-31990—Rev. B, 13-Oct-03 www.vishay.com 3 Si2301BDS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 10 Source-Drain Diode Forward Voltage 0.6 0.5 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C r DS(on)- On-Resistance ( W ) I S - Source Current (A) 0.4 ID = 2.8 A 0.3 0.2 0.1 0.0 1 TJ = 25_C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) 0.4 0.3 V GS(th) Variance (V) 0.2 Threshold Voltage 10 Single Pulse Power 8 ID = 250 mA 0.1 0.0 - 0.1 - 0.2 - 50 Power (W) 6 4 TA = 25_C 2 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000 TJ - Temperature (_C) 100 Time (sec) Safe Operating Area 10 I D - Drain Current (A) 10 ms 100 ms 1 1 ms 10 ms 100 ms dc, 100 s, 10 s, 1 s 0.1 TA = 25_C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Square Wave Pulse Duration (sec) www.vishay.com Document Number: 72066 S-31990—Rev. B, 13-Oct-03 4 Si2301BDS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Ambient Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 62.5_C/W t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Square Wave Pulse Duration (sec) Document Number: 72066 S-31990—Rev. B, 13-Oct-03 www.vishay.com 5