SI2301CDS

Si2301CDS Vishay Siliconix P-Channel 20-V (D-S) MOSFET MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.112 at VGS = - 4.5 V 0.142 at VGS = - 2.5 V ID (A)a - 3.1 3.3 nC - 2.7 Qg (Typ.) FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET RoHS APPLICATIONS • Load Switch TO-236 (SOT-23) COMPLIANT G 1 3 D S 2 Top View Si2301CDS (N1)* * Marking Code Ordering Information: Si2301CDS-T1-E3 (Lead (Pb)-free) Si2301CDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit - 20 ±8 - 3.1 - 2.5 - 2.3b, c - 1.8b, c - 10 - 1.3 - 0.72b, c 1.6 1.0 0.86b, c 0.55b, c - 55 to 150 Unit V A Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range °C THERMAL RESISTANCE RATINGS Parameter ≤5s Maximum Junction-to-Ambientb, d Steady State Maximum Junction-to-Foot (Drain) Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 175 °C/W. Symbol RthJA RthJF Typical 120 62 Maximum 145 78 Unit °C/W Document Number: 68741 S-81446-Rev. A, 23-Jun-08 www.vishay.com 1 Si2301CDS Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Currenta IS ISM VSD trr Qrr ta tb IF = - 3.0 A, dI/dt = 100 A/µs, TJ = 25 °C IS = - 0.7 A - 0.8 30 25 15 15 TC = 25 °C - 1.3 - 10 - 1.2 50 50 A V ns nC ns Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = - 10 V, RL = 10 Ω ID = - 1 A, VGEN = - 4.5 V, RG = 1 Ω f = 1 MHz VDS = - 10 V, VGS = - 4.5 V, ID = - 3 A VDS = - 10 V, VGS = - 2.5 V, ID = - 3 A VDS = - 10 V, VGS = 0 V, f = 1 MHz 405 75 55 5.5 3.3 0.7 1.3 6.0 11 35 30 10 20 60 50 20 ns Ω 10 6 nC pF VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VDS = 0 V, ID = - 250 µA ID = - 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 8 V VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ = 55 °C VDS ≤ - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 2.8 A VGS = - 2.5 V, ID = - 2.0 A VDS = - 5 V, ID = - 2.8 A -6 0.090 0.110 2.0 0.112 0.142 - 0.4 - 20 - 18 2.2 -1 ± 100 -1 - 10 V mV/°C V nA µA A Ω S Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68741 S-81446-Rev. A, 23-Jun-08 Si2301CDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 VGS = 5 thru 2.5 V 8 I D - Drain Current (A) 0.75 I D - Drain Current (A) TC = - 55 °C 0.50 TC = 25 °C 0.25 2 VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 0.00 0.0 0.3 0.6 0.9 1.2 1.5 TC = 125 °C 6 VGS = 1.5 V 4 VGS = 2 V 1.00 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.20 800 Transfer Characteristics R DS(on) - On-Resistance (Ω) 0.15 VGS = 2.5 V 0.10 VGS = 4.5 V 0.05 C - Capacitance (pF) 600 Ciss 400 200 Coss Crss 0.00 0 2 4 6 8 10 0 0 5 10 15 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 8 ID = 3 A VGS - Gate-to-Source Voltage (V) R DS(on) - On-Resistance (Normalized) 6 VDS = 5 V VDS = 10 V 4 VDS = 15 V 2 1.3 1.5 ID = 2.8 A Capacitance 1.1 VGS = 4.5 V 0.9 VGS = 1.8 V 0 0 2 4 6 8 10 0.7 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 68741 S-81446-Rev. A, 23-Jun-08 www.vishay.com 3 Si2301CDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 0.60 ID = 2.8 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.45 TJ = 150 °C 1 TJ = 25 °C TJ = - 50 °C 0.30 TJ = 125 °C 0.15 TJ = 25 °C 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.4 10 On-Resistance vs. Gate-to-Source Voltage 0.3 ID = 250 µA VGS(th) Variance (V) 0.2 Power (W) 8 6 0.1 ID = 1 mA 4 0.0 2 TA = 25 °C - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (s) 10 100 1000 TJ - Temperature (°C) Threshold Voltage Single Pulse Power 10 Limited by RDS(on)* 100 µs 1 ms I D - Drain Current (A) 1 10 ms 100 ms 0.1 TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 1s 10 s 100 s, DC VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 68741 S-81446-Rev. A, 23-Jun-08 Si2301CDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 0.01 10 -4 Single Pulse 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJF = 50 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 4. Surface Mounted 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68741. Document Number: 68741 S-81446-Rev. A, 23-Jun-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1