SI2301DS

Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) 0.130 @ VGS = - 4.5 V 0.190 @ VGS = - 2.5 V ID (A) - 2.3 - 1.9 TO-236 (SOT-23) G 1 3 D Ordering Information: Si2301DS-T1 S 2 Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit - 20 "8 - 2.3 - 1.5 - 10 - 1.6 1.25 0.8 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70627 S-31990—Rev. E, 13-Oct-03 www.vishay.com RthJA Symbol Limit 100 166 Unit _C/W 1 Si2301DS Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = - 250 mA VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "8 V VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ = 55_C VDS v - 5 V, VGS = - 4.5 V VDS v - 5 V, VGS = - 2.5 V VGS = - 4.5 V, ID = - 2.8 A VGS = - 2.5 V, ID = - 2.0 A VDS = - 5 V, ID = - 2.8 A IS = - 1.6 A, VGS = 0 V -6 -3 0.105 0.145 6.5 - 0.80 - 1.2 0.130 0.190 - 20 - 0.45 "100 -1 - 10 V nA mA Symbol Test Conditions Min Typ Max Unit On-State On State Drain Currenta ID( ) D(on) A Drain-Source On-Resistance Drain Source On Resistancea Forward Transconductancea Diode Forward Voltage rDS( ) DS(on) gfs VSD W S V Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = - 6 V, VGS = 0, f = 1 MHz VDS = - 6 V, VGS = - 4.5 V ID ^ - 2.8 A 2.8 5.8 0.85 1.70 415 223 87 pF 10 nC Switchingc Turn-On Turn On Time td(on) tr td(off) tf VDD = - 6 V, RL = 6 W ID ^ - 1.0 A, VGEN = - 4.5 V 45 RG = 6 W 13.0 36.0 42 34 25 60 70 60 ns TurnTurn-Off Time Time Notes a. Pulse test: PW v300 ms duty cycle v2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. www.vishay.com 2 Document Number: 70627 S-31990—Rev. E, 13-Oct-03 Si2301DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 10 Output Characteristics VGS = 5, 4.5, 4, 3.5, 3 V 10 2.5 V I D - Drain Current (A) Transfer Characteristics 8 I D - Drain Current (A) 8 TC = - 55_C 6 2V 6 25_C 125_C 4 4 2 0, 0.5, 1 V 1.5 V 2 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) 0.6 0.5 r DS(on)- On-Resistance ( W ) 0.4 0.3 On-Resistance vs. Drain Current 1000 Capacitance 800 C - Capacitance (pF) 600 Ciss 400 Coss 200 Crss VGS = 2.5 V 0.2 VGS = 4.5 V 0.1 0.0 0 2 4 6 8 10 ID - Drain Current (A) 0 0 3 6 9 12 VDS - Drain-to-Source Voltage (V) 5 VDS = 6 V ID = 2.8 A V GS - Gate-to-Source Voltage (V) 4 Gate Charge 1.8 1.6 r DS(on)- On-Resistance ( W ) (Normalized) 1.4 1.2 1.0 0.8 0.6 - 50 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 2.8 A 3 2 1 0 0 2 4 6 8 0 50 100 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70627 S-31990—Rev. E, 13-Oct-03 www.vishay.com 3 Si2301DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 10 Source-Drain Diode Forward Voltage 0.6 0.5 r DS(on)- On-Resistance ( W ) On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C 0.4 0.3 0.2 0.1 0.0 ID = 2.8 A TJ = 25_C 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) 0.4 0.3 VGS(th) Variance (V) 0.2 0.1 0.0 - 0.1 - 0.2 - 50 Threshold Voltage 14 12 10 Power (W) 8 6 4 2 0 Single Pulse Power ID = 250 mA TC = 25_C Single Pulse 0 50 TJ - Temperature (_C) 100 150 0.01 0.10 1.00 Time (sec) 10.00 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Ambient 0.2 0.1 0.05 0.02 Single Pulse 10 -3 10 -2 10 -1 1 10 30 0.1 0.01 10 -4 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 70627 S-31990—Rev. E, 13-Oct-03