SI2303ADS

Si2303ADS New Product Vishay Siliconix P-Channel, 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) 0.240 @ VGS = –10 V 0.460 @ VGS = –4.5 V ID (A)b –1.4 –1.0 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2303DS (3A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C PD TJ, Tstg TA= 25_C TA= 70_C ID IDM IS –0.75 0.9 0.57 –55 to 150 Symbol VDS VGS 5 sec –30 "20 –1.4 –1.1 –10 Steady State Unit V –1.3 –1.0 A –0.6 0.7 0.45 W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 71837 S-20617—Rev. B, 29-Apr-02 www.vishay.com RthJA Symbol Typical 115 140 Maximum 140 175 Unit _C/W 1 Si2303ADS Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VGS = 0 V, ID = –10 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = –30 V, VGS = 0 V VDS = –30 V, VGS = 0 V, TJ = 55_C VDS v –5 V, VGS = –10 V VGS = –10 V, ID = –1.7 A VGS = –4.5 V, ID = –1.3 A VDS = –5 V, ID = –1.7 A IS = –0.75 A, VGS = 0 V –6 0.120 0.230 2.4 –0.80 –1.2 0.240 0.460 W S V –30 –1.0 –3.0 "100 –1 –10 mA A V nA Symbol Test Conditions Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = –15 V, VGS = 0, f = 1 MHz VDS = –15 V, VGS = –10 V ID ^ –1.7 A 4.5 0.9 0.9 260 65 35 pF 10 nC Switchingc td(on) Turn-On Time tr td(off) tf Notes a. Pulse test: PW v300 ms duty cycle v2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. S FaxBack 408-970-5600 VDD = –15 V, RL =15 W ID ^ –1.0 A, VGEN = –4.5 V RG = 6 W 6 10 15 7 20 20 ns 35 20 Turn-Off Time www.vishay.com 2 Document Number: 71837 S-20617—Rev. B, 29-Apr-02 Si2303ADS New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 10 Vishay Siliconix Output Characteristics VGS = 10 thru 6 V 10 Transfer Characteristics 8 I D – Drain Current (A) 5V I D – Drain Current (A) 8 TC = –55_C 25_C 6 125_C 6 4 4V 4 2 1, 2 V 2 3V 0 0 0 2 4 6 8 10 0 1 2 3 4 5 6 7 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.8 400 Capacitance r DS(on)– On-Resistance ( W ) C – Capacitance (pF) 0.6 300 Ciss 0.4 VGS = 4.5 V 200 0.2 VGS = 10 V 100 Coss Crss 0.0 0 2 4 6 8 10 0 0 6 12 18 24 30 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) 10 VDS = 15 V ID = 1.7 A V GS – Gate-to-Source Voltage (V) 8 Gate Charge 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 1.7 A 1.6 r DS(on)– On-Resistance ( W ) (Normalized) 1.4 6 1.2 4 1.0 2 0.8 0 0 1 2 3 4 5 0.6 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Document Number: 71837 S-20617—Rev. B, 29-Apr-02 www.vishay.com 3 Si2303ADS Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 1.0 On-Resistance vs. Gate-to-Source Voltage I S – Source Current (A) 1 TJ = 150_C r DS(on)– On-Resistance ( W ) 0.8 0.6 ID = 1.7 A 0.4 0.1 TJ = 25_C 0.01 0.2 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.6 0.5 0.4 V GS(th) Variance (V) 0.3 0.2 0.1 –0.0 –0.1 –0.2 –0.3 –50 0 0.01 2 ID = 250 mA Power (W) 6 8 10 Single Pulse Power TJ = 25_C Single Pluse 4 –25 0 25 50 75 100 125 150 0.10 1.00 10.00 100.00 1000.00 TJ – Temperature (_C) Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5_C/W Single Pulse 0.01 10–4 10–3 10–2 10–1 1 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com Document Number: 71837 S-20617—Rev. B, 29-Apr-02 4