SI2303BDS

Si2303BDS New Product Vishay Siliconix P-Channel, 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -30 rDS(on) (W) 0.200 @ VGS = -10 V 0.380 @ VGS = -4.5 V ID (A)b -1.4 -1.0 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2303BDS (L3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C PD TJ, Tstg TA= 25_C TA= 70_C ID IDM IS -0.75 0.9 0.57 -55 to 150 Symbol VDS VGS 5 sec -30 "20 - 1.4 -1.1 -10 Steady State Unit V -1.3 -1.0 A -0.6 0.7 0.45 W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72065 S-21980—Rev. A, 04-Nov-02 www.vishay.com RthJA Symbol Typical 120 140 Maximum 145 175 Unit _C/W 1 Si2303BDS Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VGS = 0 V, ID = -10 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -30 V, VGS = 0 V VDS = -30 V, VGS = 0 V, TJ = 55_C VDS v -5 V, VGS = -10 V VGS = -10 V, ID = -1.7 A VGS = -4.5 V, ID = -1.3 A VDS = -5 V, ID = -1.7 A IS = -0.75 A, VGS = 0 V -6 0.150 0.285 2.0 -0.85 -1.2 0.200 0.380 W S V -30 -1.0 -3.0 "100 -1 -10 mA A V nA Symbol Test Conditions Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = -15 V, VGS = 0, f = 1 MHz VDS = -15 V, VGS = -10 V ID ^ -1.7 A 4.3 0.8 1.3 180 50 35 pF 10 nC Switchingc td(on) Turn-On Time tr td(off) tf Notes a. Pulse test: PW v300 ms duty cycle v2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. S FaxBack 408-970-5600 VDD = -15 V, RL =15 W ID ^ -1.0 A, VGEN = -4.5 V RG = 6 W 55 40 10 10 80 60 ns 20 20 Turn-Off Time www.vishay.com 2 Document Number: 72065 S-21980—Rev. A, 04-Nov-02 Si2303BDS New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 10 Vishay Siliconix Output Characteristics VGS = 10 thru 6 V 10 Transfer Characteristics 8 I D - Drain Current (A) 5V 6 I D - Drain Current (A) 8 TC = -55_C 25_C 6 125_C 4 4V 2 2, 3 V 0 0 2 4 6 8 10 4 2 0 0 1 2 3 4 5 6 7 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.8 300 Capacitance 250 r DS(on)- On-Resistance ( W ) C - Capacitance (pF) 0.6 VGS = 4.5 V Ciss 200 0.4 150 VGS = 10 V 0.2 100 Coss 50 Crss 0.0 0 2 4 6 8 10 0 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10 VDS = 15 V ID = 1.7 A V GS - Gate-to-Source Voltage (V) 8 Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 1.7 A 1.4 r DS(on)- On-Resistance ( W ) (Normalized) 0 1 2 3 4 5 6 1.2 4 1.0 2 0.8 0 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 72065 S-21980—Rev. A, 04-Nov-02 www.vishay.com 3 Si2303BDS Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 1.0 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 1 r DS(on)- On-Resistance ( W ) 0.8 I S - Source Current (A) 0.6 ID = 1.7 A 0.4 TJ = 25_C 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.9 10 Single Pulse Power 0.6 V GS(th) Variance (V) 8 ID = 250 mA Power (W) 0.3 6 0.0 4 TA = 25_C -0.3 2 -0.6 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000 TJ - Temperature (_C) Time (sec) Safe Operating Area, Junction-to-Case 100.0 10.0 I D - Drain Current (A) Limited by rDS(on) 1.0 10 ms 100 ms 1 ms 10 ms 0.1 100 ms TA = 25_C Single Pulse 0.01 0.1 1 10 100 dc, 100 s, 10 s, 1 s VDS - Drain-to-Source Voltage (V) Square Wave Pulse Duration (sec) www.vishay.com Document Number: 72065 S-21980—Rev. A, 04-Nov-02 4 Si2303BDS New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance Vishay Siliconix 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5_C/W Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Square Wave Pulse Duration (sec) Document Number: 72065 S-21980—Rev. A, 04-Nov-02 www.vishay.com 5