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SI2303BDS_RC

SI2303BDS_RC

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    SI2303BDS_RC - R-C Thermal Model Parameters - Vishay Siliconix

  • 数据手册
  • 价格&库存
SI2303BDS_RC 数据手册
Si2303BDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to RT1 RT2 RT3 RT4 Junction to CT1 CT2 CT3 CT4 Ambient 40.9471 90.1932 38.5858 5.2739 Ambient 1.6877 12.5004 m 1.8943 m 132.4314 u Case N/A N/A N/A N/A Case N/A N/A N/A N/A Foot 25.8832 12.8887 35.7078 3.5203 Foot 9.6862 m 2.2361 m 20.7116 m 125.9647 u Thermal Capacitance (Joules/°C) This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 74985 Revision 13-Mar-07 www.vishay.com 1 Si2303BDS_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (°C/W) Junction to RF1 RF2 RF3 RF4 Junction to CF1 CF2 CF3 CF4 Note: NA indicates not applicable Ambient 18.3453 49.5833 67.7656 39.3058 Ambient 536.8807 u 2.4197 m 13.5492 m 1.7985 Case N/A N/A N/A N/A Case N/A N/A N/A N/A Foot 7.7948 28.5633 32.4733 9.1686 Foot 317.7109 u 2.3996 m 8.9406 m 36.4406 m Thermal Capacitance (Joules/°C) Reference: [1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002 www.vishay.com 2 Document Number: 74985 Revision 13-Mar-07 Si2303BDS_RC Vishay Siliconix Document Number: 74985 Revision 13-Mar-07 www.vishay.com 3
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