SI2304BDS_08

Si2304BDS Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.070 at VGS = 10 V 0.105 at VGS = 4.5 V ID (A) 3.2 2.6 Qg (Typ.) 2.6 FEATURES • Halogen-free Option Available RoHS COMPLIANT TO-236 (SOT-23) G 1 3 D S 2 Top View Si2304BDS (L4)* * Marking Code Ordering Information: Si2304BDS-T1-E3 (Lead (Pb)-free) Si2304BDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg 0.9 1.08 0.69 - 55 to 150 3.2 2.5 10 0.62 0.75 0.48 W °C 5s 30 ± 20 2.6 2.1 A Steady State Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on FR4 board, t ≤ 5 s. b. Pulse width limited by maximum junction temperature. c. Surface Mounted on FR4 board. t≤5s Steady State Steady State Symbol RthJA RthJF Typical 90 130 60 Maximum 115 166 75 °C/W Unit For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72503 S-80642-Rev. D, 24-Mar-08 www.vishay.com 1 Si2304BDS Vishay Siliconix SPECIFICATIONS TA = 25 °C, unless otherwise noted Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage Dynamic Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: a. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Symbol V(BR)DSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD Qg Qgt Qgs Qgd Rg Ciss Coss Crss td(on) tr td(off) tf Test Conditions VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 °C VDS = 30 V, VGS = 1.0 V, TJ = 25 °C VDS ≥ 4.5 V, VGS = 10 V VGS = 10 V, ID = 2.5 A VGS = 4.5 V, ID = 2.0 A VDS = 4.5 V, ID = 2.5 A IS = 1.25 A, VGS = 0 V VDS = 15 V, VGS = 5 V, ID = 2.5 A VDS = 15 V, VGS = 10 V, ID = 2.5 A f = 1.0 MHz VDS = 15 V, VGS = 0 V, f = 1 MHz Min. 30 1.5 Typ. Max. Unit 3.0 ± 100 0.5 10 1 V nA µA A 6 0.055 0.080 6.0 0.8 2.6 4.6 0.8 1.15 3.0 225 50 28 7.5 12 20 30 25 1.2 4 7 0.070 0.105 Ω S V nC Ω pF VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 12.5 19 15 ns TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 VGS = 10 thru 5 V 8 8 I D - Drain Current (A) 10 I D - Drain Current (A) 6 6 4 4V 2 3V 0 0 2 4 6 8 10 4 TC = 125 °C 2 25 °C - 55 °C 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics www.vishay.com 2 Transfer Characteristics Document Number: 72503 S-80642-Rev. D, 24-Mar-08 Si2304BDS Vishay Siliconix TYPICAL CHARACTERISTICS 0.24 25 °C, unless otherwise noted 350 300 250 200 150 100 Coss 50 0 Crss Ciss 0.20 R DS(on) - On-Resistance (Ω) C - Capacitance (pF) 0.16 0.12 VGS = 4.5 V 0.08 VGS = 10 V 0.04 0.00 0 2 4 6 8 10 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 VDS = 15 V ID = 2.5 A 8 R DS(on) - On-Resistance 1.4 1.6 VGS = 10 V ID = 2.5 A Capacitance VGS - Gate-to-Source Voltage (V) (Normalized) 6 1.2 4 1.0 2 0.8 0 0 1 2 3 4 5 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge 10 0.20 On-Resistance vs. Junction Temperature I S - Source Current (A) 1 R DS(on) - On-Resistance (Ω) TJ = 150 °C 0.16 ID = 2.5 A 0.12 0.1 TJ = 25 °C 0.08 0.01 0.04 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 72503 S-80642-Rev. D, 24-Mar-08 www.vishay.com 3 Si2304BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 10 0.2 VGS(th) Variance (V) ID = 250 µA 0.0 Power (W) 8 6 TA = 25 °C Single Pulse - 0.2 4 - 0.4 2 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 150 0 0.01 0.1 1 Time (s) 10 100 600 Threshold Voltage 100 Limited by RDS(on)* 10 I D - Drain Current (A) IDM Limited 10 µs 100 µs 1 1 ms 10 ms 0.1 TA = 25 °C Single Pulse 100 ms Single Pulse Power DC, 100 s, 10 s, 1 s 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 130 °C/W Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 3. T JM - T A = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72503. www.vishay.com 4 Document Number: 72503 S-80642-Rev. D, 24-Mar-08 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1