SI2304DS

Si2304DS Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.117 @ VGS = 10 V 0.190 @ VGS = 4.5 V ID (A) 2.5 2.0 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2304DS (A4)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Drain Current Pulsed Drain Currentb TA= 25_C TA= 70_C Symbol VDS VGS ID IDM IS TA= 25_C TA= 70_C PD TJ, Tstg Limit 30 "20 2.5 2.0 Unit V A 10 1.25 1.25 W 0.80 –55 to 150 _C Continuous Source Current (Diode Conduction)a Power Dissipationa Dissipation Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Ambientc Notes a. Surface Mounted on FR4 Board, t v 5 sec. b. Pulse width limited by maximum junction temperature. c. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70756 S-63633—Rev. D, 01-Nov-99 www.vishay.com S FaxBack 408-970-5600 RthJA 166 Symbol Limit 100 Unit _C/W 1 Si2304DS Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = 30 V, VGS = 0 V, TJ = 55_C VDS = 30 V, VGS = 1.0 V, TJ =25_C On-State Drain Currenta Drain Current ID(on) VDS w 4.5 V, VGS = 10 V VDS w 4.5 V, VGS = 4.5 V VGS = 10 V, ID = 2.5 A rDS(on) VGS = 4.5 V, ID = 2.0 A Forward Transconductancea Diode Forward Voltage gfs VSD VDS = 4.5 V, ID = 2.5 A IS = 1.25 A, VGS = 0 V 0.142 4.6 0.77 1.2 0.190 S V 6 A 4 0.092 0.117 W 30 V 1.5 "100 0.5 10 1 mA nA Symbol Test Conditions Min Typ Max Unit Drain-Source On-Resistancea On Dynamic Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgt Qgs Qgd Ciss Coss Crss VDS = 15 V VGS = 0 V, f = 1 MHz 15 V, MH VDS = 15 V VGS = 10 V ID = 2.5 A 15 V, 10 V, 5 VDS = 15 V, VGS = 5 V, ID = 2.5 A 2.4 4.5 0.8 1.0 240 110 17 pF F 4 10 nC C Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Notes a. Pulse test: PW v300 ms duty cycle v2%. td(on) tr td(off) tf VDD = 15 V, RL = 15 W 15 V, 15 ID ^ 1 A, VGEN = 10 V RG = 6 W 10 V, 8 12 17 8 20 30 ns 35 20 www.vishay.com S FaxBack 408-970-5600 2 Document Number: 70756 S-63633—Rev. D, 01-Nov-99 Si2304DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 10 Output Characteristics 10 Transfer Characteristics VGS = 10 V - 5 V 8 I D – Drain Current (A) I D – Drain Current (A) 8 6 4V 6 4 4 TC = 125_C 2 25_C –55_C 0 2 0V > 0 2 4 6 8 3V 0 10 0 VDS – Drain-to-Source Voltage (V) 1 2 3 4 VGS – Gate-to-Source Voltage (V) 5 On-Resistance vs. Drain Current 0.30 500 Capacitance r DS(on)– On-Resistance ( W ) 0.24 VGS = 4.5 V 0.18 C – Capacitance (pF) 400 300 Ciss 200 Coss 100 Crss 0.12 VGS = 10 V 0.06 0 0 2 4 6 8 10 0 0 6 12 18 24 30 0 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) 10 VDS = 15 V ID = 2.5 A V GS – Gate-to-Source Voltage (V) Gate Charge 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 2.5 A r DS(on)– On-Resistance ( W ) (Normalized) 0 1 2 3 4 5 8 1.6 1.4 6 1.2 4 1.0 2 0.8 0 0.6 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Document Number: 70756 S-63633—Rev. D, 01-Nov-99 www.vishay.com S FaxBack 408-970-5600 3 Si2304DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 0.6 On-Resistance vs. Gate-to-Source Voltage 0.5 r DS(on)– On-Resistance ( W ) I S – Source Current (A) 0.4 0.3 ID = 2.5 A TJ = 150_C TJ = 25_C 0.2 0.1 1 0.2 0.4 0.6 0.8 1.0 1.2 0 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.3 0.2 0.1 V GS(th) Variance (V) –0.0 –0.1 –0.2 –0.3 –0.4 –0.5 –0.6 –50 0 0.01 2 ID = 250 mA Power (W) 8 10 Single Pulse Power 6 TC = 25_C Single Pulse 4 –25 0 25 50 75 100 125 150 0.10 1.00 Time (sec) 10.00 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 4 Document Number: 70756 S-63633—Rev. 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