SI2305DS

Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) 0.052 @ VGS = –4.5 V 0.071 @ VGS = –2.5 V 0.108 @ VGS = –1.8 V ID (A) "3.5 "3 "2 TO-236 (SOT-23) G 1 3 S 2 D Top View Si2305DS (A5)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Drain Current C) Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipation)a, b Power Dissipation)a, Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit –8 "8 "3.5 "2.8 "12 –1.6 1.25 0.8 –55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambienta t v 5 sec Steady State Notes a. Surface Mounted on FR4 Board. b. t v5 sec. Document Number: 70833 S-56947—Rev. C, 28-Dec-98 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Typical Maximum 100 Unit _C/W 130 2-1 Si2305DS Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = –10 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "8 V VDS = –6.4 V, VGS = 0 V VDS = –6.4 V, VGS = 0 V, TJ = 55_C VDS v –5 V, VGS = –4.5 V VDS v –5 V, VGS = –2.5 V VGS = –4.5 V, ID = –3.5 A Drain-Source On-Resistancea DiS ORi rDS(on) VGS = –2.5 V, ID = –3 A VGS = –1.8 V, ID = –2 A Forward Transconductancea gfs VSD VDS = –5 V, ID = –3.5 A IS = –1.6 A, VGS = 0 V –6 A –3 0.044 0.060 0.087 8.5 –1.2 0.052 0.071 0.108 S V W –8 V –0.45 "100 –1 –10 nA mA Symbol Test Conditions Min Typ Max Unit On-State Drain Currenta Drain Current ID(on) Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = –4 V VGS = 0, f = 1 MHz MH V, VDS = –4 V VGS = –4.5 V V, 45 ID ^ –3.5 A 3.5 10 2 2 1245 375 210 F pF 15 nC C Switchingb Turn-On Time Time td(on) tr Turn-Off Time Time td(off) tf Notes a. b. c. For DESIGN AID ONLY, not subject to production testing. Pulse test: PW v300 ms duty cycle v2%. Switching time is essentially independent of operating temperature. VDD = –4 V RL = 4 W V, ID ^ –1.0 A, VGEN = –4.5 V 1.0 A, 4.5 RG = 6 W 13 25 55 19 20 40 ns 80 35 www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70833 S-56947—Rev. C, 28-Dec-98 Si2305DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 12 VGS = 4.5 thru 2.5 V 10 2V 12 TC = –55_C 10 25_C I D – Drain Current (A) 8 I D – Drain Current (A) 8 125_C 6 Transfer Characteristics 6 1.5 V 4 4 2 1, 0.5 V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 2 0 0 0.5 1.0 1.5 2.0 2.5 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.30 2000 Capacitance r DS(on) – On-Resistance ( W ) 0.25 C – Capacitance (pF) 1600 Ciss 1200 0.20 0.15 VGS = 1.8 V 0.10 VGS = 2.5 V 800 Coss 400 0.05 VGS = 4.5 V 0 0 2 4 6 8 10 12 Crss 0 0 2 4 6 8 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 5 V GS – Gate-to-Source Voltage (V) VDS = 4 V ID = 3.5 A 1.4 On-Resistance vs. Junction Temperature r DS(on) – On-Resistance (W) (Normalized) 4 VGS = 4.5 V ID = 3.5 A 1.2 3 1.0 2 0.8 1 0 0 2 4 6 8 10 0.6 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Document Number: 70833 S-56947—Rev. C, 28-Dec-98 www.vishay.com S FaxBack 408-970-5600 2-3 Si2305DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 30 0.5 On-Resistance vs. Gate-to-Source Voltage 10 r DS(on) – On-Resistance ( W ) I S – Source Current (A) 0.4 0.3 TJ = 150_C 1 TJ = 25_C 0.2 ID = 3.5 A 0.1 0.1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 0 2 4 6 8 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.4 ID = 250 mA 12 10 Single Pulse Power 0.3 V GS(th) Variance (V) 0.2 Power (W) 8 0.1 6 0.0 4 TA = 25_C –0.1 2 –0.2 –50 0 –25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 500 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 130_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 100 500 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70833 S-56947—Rev. C, 28-Dec-98