SI2312CDS

New Product Si2312CDS Vishay Siliconix N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0318 at VGS = 4.5 V 20 0.0356 at VGS = 2.5 V 0.0414 at VGS = 1.8 V ID (A)e 6a 6a 5.6 8.8 nC Qg (Typ.) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters • Load Switch for Portable Applications SOT-23 D G 1 3 D Marking Code P5 XXX Lot Traceability and Date Code Part # Code G S 2 Top View Ordering Information: Si2312CDS-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C IDM IS Symbol VDS VGS Limit 20 ±8 6a 5.1 5b, c 4b, c 20 1.75 1.04b, c 2.1 1.3 1.25b, c 0.8b, c - 55 to 150 260 A Unit V Continuous Drain Current (TJ = 150 °C) ID Maximum Power Dissipation PD W TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t≤5s Steady State Symbol RthJA RthJF Typical 80 40 Maximum 100 60 Unit °C/W Notes: a. Package limited b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 125 °C/W. e. Based on TC = 25 °C. Document Number: 65900 S10-0641-Rev. A, 22-Mar-10 www.vishay.com 1 New Product Si2312CDS Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic b Symbol VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS , ID = 250 µA VDS = 0 V, VGS = ± 8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70 °C VDS ≤ 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 5.0 A VGS = 2.5 V, ID = 4.7 A VGS = 1.8 V, ID = 4.3 A VDS = 10 V, ID = 5.0 A Min. 20 Typ. Max. Unit V 25 - 2.6 0.45 1.0 ± 100 1 10 20 0.0265 0.0296 0.0345 24 0.0318 0.0356 0.0414 mV/°C V nA µA A Ω S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time 865 VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 5 V, ID = 5.0 A VDS = 10 V, VGS = 4.5 V, ID = 5.0 A f = 1 MHz VDD = 10 V, RL = 2.2 Ω ID ≅ 4 A, VGEN = 4.5 V, Rg = 1 Ω 0.5 105 55 12 8.8 1.1 0.7 2.4 8 17 31 8 5 VDD = 10 V, RL = 2.2 Ω ID ≅ 4 A, VGEN = 5 V, Rg = 1 Ω 13 21 6 TC = 25 °C IS = 4 A, VGS = 0 V 0.75 12 IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C 5 7 5 4.8 16 26 47 16 10 20 32 12 1.75 20 1.2 20 10 ns Ω 18 14 nC pF A V ns nC ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65900 S10-0641-Rev. A, 22-Mar-10 New Product Si2312CDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 V GS = 5 V thru 2 V 4 15 I D - Drain Current (A) I D - Drain Current (A) V GS = 1.5 V 5 3 10 2 T C = 25 °C 1 T C = 125 °C 5 V GS = 1 V 0 0.0 0 0.0 T C = - 55 °C 2.0 0.3 0.6 0.9 1.2 1.5 0.5 1.0 1.5 V DS - Drain-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) Output Characteristics 0.045 1200 Transfer Characteristics R DS(on) - On-Resistance (Ω) 0.040 900 V GS = 1.8 V 0.035 V GS = 2.5 V 0.030 V GS = 4.5 V 0.025 C - Capacitance (pF) Ciss 600 300 Coss Crss 0 5 10 15 20 0.020 0 5 10 ID - Drain Current (A) 15 20 0 V DS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 5 ID = 5 A VGS - Gate-to-Source Voltage (V) 4 V DS = 10 V 3 V DS = 5 V 2 V DS = 16 V 1 R DS(on) - On-Resistance 1.45 (Normalized) 1.70 Capacitance V GS = 2.5 V, I D = 4.7 A 1.20 V GS = 4.5 V, I D = 5 A 0.95 0 0 2 4 6 8 10 0.70 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) T J - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 65900 S10-0641-Rev. A, 22-Mar-10 www.vishay.com 3 New Product Si2312CDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.06 ID = 5 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) T J = 150 °C 0.05 10 0.04 T J = 125 °C T J = 25 °C 1 0.03 T J = 25 °C 0.1 0.0 0.02 0.3 0.6 0.9 1.2 0 2 4 6 8 V GS - Gate-to-Source Voltage (V) V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 0.9 32 On-Resistance vs. Gate-to-Source Voltage 0.7 ID = 250 μA Power (W) - 25 0 25 50 75 100 125 150 VGS(th) (V) 24 0.5 16 0.3 8 0.1 - 50 0 0.001 0.01 0.1 Time (s) 1 10 100 T J - Temperature (°C) Threshold Voltage 100 Limited by R DS(on)* 10 Single Pulse Power (Junction-to-Ambient) I D - Drain Current (A) 100 μs 1 ms 1 10 ms TA = 25 °C Single Pulse 0.1 BVDSS Limited 0.01 0.1 100 ms 1 s, 10 s DC 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 65900 S10-0641-Rev. A, 22-Mar-10 New Product Si2312CDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 7.5 6.0 I D - Drain Current (A) Package Limited 4.5 3.0 1.5 0.0 0 25 50 75 100 125 150 T C - Case Temperature (°C) Current Derating* 2.5 1.2 2.0 0.9 Power (W) Power (W) 0 25 50 75 100 125 150 1.5 0.6 1.0 0.3 0.5 0.0 0.0 0 25 50 75 100 125 150 T C - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65900 S10-0641-Rev. A, 22-Mar-10 www.vishay.com 5 New Product Si2312CDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 125 °C/W 3. T JM - TA = PDMZthJA(t) Notes: Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 4. Surface Mounted 100 1000 10 000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 10 -4 10 -3 0.02 Single Pulse 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65900. www.vishay.com 6 Document Number: 65900 S10-0641-Rev. A, 22-Mar-10 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1