SI2314EDS

Si2314EDS New Product Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.033 @ VGS = 4.5 V 20 0.040 @ VGS = 2.5 V 0.051 @ VGS = 1.8 V FEATURES ID (A) 4.9 4.4 3.9 D TrenchFETr Power MOSFET D ESD Protected: 3000 V APPLICATIONS D LI-lon Battery Protection TO-236 (SOT-23) 3 kW 3 S 2 D G D G 1 Top View Si2314EDS (C4)* *Marking Code S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb L = 0.1 mH Conduction)a TA= 25_C TA= 70_C TA= 25_C TA= 70_C Symbol VDS VGS 5 sec 20 "12 4.9 Steady State Unit V 3.77 3.0 15 15 11.25 1.0 mJ A 0.75 0.48 –55 to 150 W _C A ID IDM IAS EAS IS 3.9 Avalanche Currentb Single Avalanche Energy Continuous Source Current (Diode Power Dissipationa Operating Junction and Storage Temperature Range 1.25 PD TJ, Tstg 0.80 THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Document Number: 71611 S-04683—Rev. B, 10-Sep-01 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 75 120 40 Maximum 100 166 50 Unit _C/W 1 Si2314EDS Vishay Siliconix New Product SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "4.5 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 70_C VDS w 10 V, VGS = 4.5 V VGS = 4.5 V, ID = 5.0 A Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage rDS(on) gfs VSD VGS = 2.5 V, ID = 4.5 A VGS = 1.8 V, ID = 4.0 A VDS = 15 V, ID = 5.0 A IS = 1.0 A, VGS = 0 V 15 0.027 0.033 0.042 40 0.8 1.2 0.033 0.040 0.051 S V W 20 0.45 "1.5 1 75 A mA V Symbol Test Conditions Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd VDS = 10 V, VGS = 4.5 V, ID = 5.0 A 11.0 1.5 2.1 14.0 nC Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Source-Drain Reverse Recovery Time td(on) tr td(off) tf trr IF = 1.0 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W 10 ID ^ 1.0 A, VGEN = 4.5 V, RG = 6 W 0.53 1.4 13.5 5.9 13 0.8 2.2 20 9 25 ns ms Notes a. Pulse test: PW v300 ms duty cycle v2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate-Current vs. Gate-Source Voltage 1200 10,000 1,000 I GSS – Gate Current (m A) 100 10 1 0.1 TJ = 25_C 0.01 0.001 0 0 2 4 6 8 10 12 0.0001 0.1 1 10 100 TJ = 150_C Gate Current vs. Gate-Source Voltage 1000 I GSS – Gate Current (mA) 800 600 400 200 VGS – Gate-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71611 S-04683—Rev. B, 10-Sep-01 Si2314EDS New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 15 VGS = 4.5 thru 2.0 V 12 I D – Drain Current (A) I D – Drain Current (A) 12 15 Vishay Siliconix Transfer Characteristics 9 1.5 V 9 6 6 TC = 125_C 3 3 0.5 V 0 0 1 2 3 4 1.0 V 25_C 0 0.0 –55_C 1.0 1.5 2.0 0.5 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.15 r DS(on) – On-Resistance ( W ) 1500 Capacitance C – Capacitance (pF) 0.12 1200 Ciss 900 0.09 0.06 VGS = 1.8 V VGS = 2.5 V 600 0.03 VGS = 4.5 V 0.00 0 3 6 9 12 15 300 Coss Crss 0 0 4 8 12 16 20 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 8 V GS – Gate-to-Source Voltage (V) VDS = 10 V ID = 5.0 A 6 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 5.0 A 1.4 r DS(on) – On-Resistance (W ) (Normalized) 1.2 4 1.0 2 0.8 0 0 4 8 12 16 20 Qg – Total Gate Charge (nC) 0.6 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) Document Number: 71611 S-04683—Rev. B, 10-Sep-01 www.vishay.com 3 Si2314EDS Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 10 r DS(on) – On-Resistance ( W ) ID = 5.0 A 0.15 I S – Source Current (A) TJ = 150_C 1 0.20 On-Resistance vs. Gate-to-Source Voltage 0.10 TJ = 25_C 0.1 0.05 0.01 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.2 12 10 ID = 250 mA Power (W) –0.0 8 Single Pulse Power 0.1 V GS(th) Variance (V) TA = 25_C 6 –0.1 –0.2 4 –0.3 2 –0.4 –50 0 –25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 166_C/W 3. TJM – TA = PDMZthJA(t) t1 t2 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71611 S-04683—Rev. B, 10-Sep-01