SI2315BDS

Si2315BDS Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) 0.050 @ VGS = - 4.5 V 0.065 @ VGS = - 2.5 V 0.100 @ VGS = - 1.8 V ID (A) - 3.85 - 3.4 - 2.7 TO-236 (SOT-23) G 1 3 S 2 D Ordering Information: Si2315BDS-T1 Top View Si2315BDS *(M5) *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currenta Continuous Source Current (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 sec - 12 "8 - 3.85 - 3.0 - 12 - 1.0 1.19 0.76 Steady State Unit V - 3.0 - 2.45 A - 0.62 0.75 0.48 - 55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter t  5 sec. Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on FR4 Board. b. t v5 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72014 S-31990—Rev. D, 13-Oct-03 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 85 130 60 Maximum 105 166 75 Unit _C/W 1 Si2315BDS Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = - 10 mA VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "8 V VDS = - 12 V, VGS = 0 V VDS = - 12 V, VGS = 0 V, TJ = 55_C VDS v - 5 V, VGS = - 4.5 V VDS v - 5 V, VGS = - 2.5 V VGS = - 4.5 V, ID = - 3.85 A Drain-Source On-Resistancea rDS(on) () VGS = - 2.5 V, ID = - 3.4 A VGS = - 1.8 V, ID = - 2.7 A Forward Transconductancea Diode Forward Voltage gfs VSD VDS = - 5 V, ID = - 3.85 A IS = - 1.6 A, VGS = 0 V -6 -3 0.040 0.050 0.071 7 - 1.2 0.050 0.065 0.100 S V W - 12 - 0.45 - 0.90 "100 -1 - 10 V nA mA Symbol Test Conditions Min Typ Max Unit On-State On State Drain Currenta ID( ) D(on) A Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = - 6 V, VGS = 0, f = 1 MHz VDS = - 6 V, VGS = - 4.5 V ID ^ - 3.85 A 3.85 8 1.1 2.3 715 275 200 pF 15 nC Switchingb Turn-On Turn On Time td(on) tr td(off) tf VDD = - 6 V, RL = 6 W ID ^ - 1.0 A, VGEN = - 4.5 V 45 RG = 6 W 15 35 50 50 20 50 70 75 ns TurnTurn-Off Time Time Notes a. b. c. For DESIGN AID ONLY, not subject to production testing. Pulse test: PW v300 ms duty cycle v2%. Switching time is essentially independent of operating temperature. www.vishay.com 2 Document Number: 72014 S-31990—Rev. D, 13-Oct-03 Si2315BDS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 12 10 8 6 4 2 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) 1.5 V Output Characteristics 12 10 8 6 4 2 0 0.0 Transfer Characteristics VGS = 4.5 thru 2 V I D - Drain Current (A) I D - Drain Current (A) TC = 125_C 25_C - 55_C 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) 0.30 0.25 On-Resistance vs. Drain Current 1200 1000 C - Capacitance (pF) 800 600 400 200 Crss Capacitance r DS(on) - On-Resistance ( W ) 0.20 0.15 0.10 0.05 VGS = 4.5 V 0.00 0 2 4 6 8 10 12 VGS = 1.8 V VGS = 2.5 V Ciss Coss 0 0 2 4 6 8 10 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 3.5 A 1.6 On-Resistance vs. Junction Temperature 3 r DS(on) - On-Resistance (W ) (Normalized) 4 1.4 VGS = 4.5 V ID = 3.5 A 1.2 2 1.0 1 0.8 0 0 2 4 6 8 10 Qg - Total Gate Charge (nC) Document Number: 72014 S-31990—Rev. D, 13-Oct-03 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si2315BDS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 0.4 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 10 I S - Source Current (A) 0.3 TJ = 150_C 0.2 TJ = 25_C ID = 3.5 A 0.1 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0.0 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.6 0.4 V GS(th) Variance (V) 0.2 Power (W) - 0.0 - 0.2 - 0.4 - 0.6 - 50 ID = 250 mA 12 10 Single Pulse Power 8 6 4 TA = 25_C 2 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Safe Operating Area 100 Limited by rDS(on) 10 I D - Drain Current (A) 1 ms, 100 ms 10 ms 100 ms 1s 10 s 1 0.1 dc, 100 s TA = 25_C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) www.vishay.com Document Number: 72014 S-31990—Rev. D, 13-Oct-03 4 Si2315BDS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Normalized Thermal Transient Impedance, Junction-to-Ambient Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 130_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (sec) Document Number: 72014 S-31990—Rev. D, 13-Oct-03 www.vishay.com 5