SI2315DS-T1

Si2315DS Vishay Siliconix P-Channel 1.25-W, 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) 0.055 @ VGS = - 4.5 V 0.075 @ VGS = - 2.5 V 0.118 @ VGS = - 1.8 V ID (A) "3.5 "3 "2 TO-236 (SOT-23) G 1 3 S 2 D Ordering Information: Si2315DS-T1 Top View Si2315DS (C5)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage a, Continuous Drain Current Continuous Drain Current (TJ = 150_C)a, b Symbol VDS VGS TA = 25_C TA = 70_C ID IDM IS TA = 25_C TA = 70_C PD TJ, Tstg Limit - 12 "8 "3.5 "2.8 "12 - 1.6 1.25 0.8 - 55 to 150 Unit V Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Notes a. Surface Mounted on FR4 Board. b. t v5 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70850 S-31990—Rev. C, 13-Oct-03 www.vishay.com t v 5 sec Steady State Symbol RthJA Typical 130 Maximum 100 Unit _C/W 1 Si2315DS Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = - 10 mA VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "8 V VDS = - 12 V, VGS = 0 V VDS = - 12 V, VGS = 0 V, TJ = 55_C VDS v - 5 V, VGS = - 4.5 V VDS v - 5 V, VGS = - 2.5 V VGS = - 4.5 V, ID = - 3.5 A Drain-Source On-Resistancea rDS(on) () VGS = - 2.5 V, ID = - 3 A VGS = - 1.8 V, ID = - 2 A Forward Transconductancea Diode Forward Voltage gfs VSD VDS = - 5 V, ID = - 3.5 A IS = - 1.6 A, VGS = 0 V -6 -3 0.045 0.063 0.093 7 - 1.2 0.055 0.075 0.118 S V W - 12 - 0.45 "100 -1 - 10 V nA mA Symbol Test Conditions Min Typ Max Unit On-State On State Drain Currenta ID( ) D(on) A Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = - 6 V, VGS = 0, f = 1 MHz VDS = - 6 V, VGS = - 4.5 V ID ^ - 3.5 A 3.5 9 1.9 1.5 1225 260 130 pF 15 nC Switchingb Turn-On Turn On Time td(on) tr td(off) tf VDD = - 6 V, RL = 6 W ID ^ - 1.0 A, VGEN = - 4.5 V 45 RG = 6 W 13.0 15 50 19 20 25 70 35 ns TurnTurn-Off Time Time Notes a. b. c. For DESIGN AID ONLY, not subject to production testing. Pulse test: PW v300 ms duty cycle v2%. Switching time is essentially independent of operating temperature. www.vishay.com 2 Document Number: 70850 S-31990—Rev. C, 13-Oct-03 Si2315DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 12 10 8 6 4 1.5 V 2 1, 0.5 V 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) 0 0.0 0.5 1.0 1.5 2.0 2.5 2V Output Characteristics VGS = 4.5 thru 2.5 V 12 10 8 6 4 2 Transfer Characteristics TC = - 55_C 25_C I D - Drain Current (A) I D - Drain Current (A) 125_C VGS - Gate-to-Source Voltage (V) 0.30 0.25 On-Resistance vs. Drain Current 2000 Capacitance r DS(on) - On-Resistance ( W ) 1600 C - Capacitance (pF) Ciss 1200 0.20 VGS = 1.8 V 0.15 0.10 0.05 VGS = 4.5 V 0.00 0 2 4 6 8 10 12 800 Coss VGS = 2.5 V 400 Crss 0 3 0 6 9 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 3.5 A 1.6 On-Resistance vs. Junction Temperature 3 r DS(on) - On-Resistance (W ) (Normalized) 4 1.4 VGS = 4.5 V ID = 3.5 A 1.2 2 1.0 1 0.8 0 0 2 4 6 8 10 Qg - Total Gate Charge (nC) Document Number: 70850 S-31990—Rev. C, 13-Oct-03 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si2315DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 10 r DS(on) - On-Resistance ( W ) 0.4 I S - Source Current (A) 0.5 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 1 TJ = 25_C 0.3 0.2 ID = 3.5 A 0.1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0.0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 0.3 V GS(th) Variance (V) 0.2 Power (W) 0.1 0.0 - 0.1 - 0.2 - 50 ID = 250 mA 12 10 Single Pulse Power 8 6 4 TA = 25_C 2 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Normalized Thermal Transient Impedance, Junction-to-Ambient Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 130_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com Document Number: 70850 S-31990—Rev. C, 13-Oct-03 4